Patents by Inventor George Guan

George Guan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ammonium borate containing compositions for stripping residues from semiconductor substrates
    Patent number: 6875733
    Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): an organic amine or mixture of amines 15-60 %, water 20-60 %, ammonium tetraborate or ammonium pentaborate 9-20 %, an optional polar organic solvent 0-15 %.
    Type: Grant
    Filed: October 14, 1998
    Date of Patent: April 5, 2005
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, George Guan
  • Boric acid containing compositions for stripping residues from semiconductor substrates
    Patent number: 6599870
    Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): Boric Acid  2-17% Organic amine or mixture of amines 35-70% Water 20-45% Glycol solvent (optional)  0-5% Chelating agent (optional)  0-17% The preferred amines are: Monoethanolamine (MEA) Triethanolamine (TEA).
    Type: Grant
    Filed: June 25, 2002
    Date of Patent: July 29, 2003
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, George Guan, Long Nguyen
  • Boric acid containing compositions for stripping residues from semiconductor substrates
    Publication number: 20030040447
    Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing.
    Type: Application
    Filed: June 25, 2002
    Publication date: February 27, 2003
    Inventors: William A. Wojtczak, George Guan, Long Nguyen
  • Boric acid containing compositions for stripping residues from semiconductor substrates
    Patent number: 6492310
    Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): Boric Acid  2-17% Organic amine or mixture of amines 35-70% Water 20-45% Glycol solvent (optional)  0-5% Chelating agent (optional)  0-17% The preferred amines are: Monoethanolamine (MEA) Triethanolamine (TEA).
    Type: Grant
    Filed: March 7, 2001
    Date of Patent: December 10, 2002
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, George Guan, Long Nguyen
  • Boric acid containing compositions for stripping residues from semiconductor substrates
    Patent number: 6306807
    Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing.
    Type: Grant
    Filed: May 17, 1999
    Date of Patent: October 23, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, George Guan, Long Nguyen
  • Boric acid containing compositions for stripping residues from semiconductor substrates
    Publication number: 20010008878
    Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing.
    Type: Application
    Filed: March 7, 2001
    Publication date: July 19, 2001
    Inventors: William A. Wojtczak, George Guan, Long Nguyen
  • Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates
    Patent number: 6224785
    Abstract: A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown: Ammonium fluoride and/or a derivative thereof;  1-21% an organic amine or mixture of two amines; 20-55% water; 23-50% a metal chelating agent or mixture of chelating agents.
    Type: Grant
    Filed: August 29, 1997
    Date of Patent: May 1, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, George Guan, Daniel N. Fine, Stephen A. Fine
  • Formulations including a 1, 3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates
    Patent number: 6211126
    Abstract: A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown: an organic amine 2-98%; water 0-50%; a 1,3-dicarbonyl compound chelating agent 0.1-60%; a second or alternative chelating agent 0-25%; a polar organic solvent 2-98%.
    Type: Grant
    Filed: August 20, 1999
    Date of Patent: April 3, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, George Guan, Stephen A. Fine
  • Method for making digital versatile discs
    Patent number: 6165299
    Abstract: A method for making a digital versatile disc (DVD) includes providing top and bottom substrates, each of the top and bottom substrates being disc-shaped and having a pitted surface. A reflective layer is formed over the pitted surface of the top substrate and a semireflective layer is formed over the pitted surface of the bottom substrate. A wetting promoter is applied over the reflective layer of the top substrate and, if desired, over the semireflective layer of the bottom substrate. The top and bottom substrates are bonded together with an adhesive material using a simple drop technique to form a DVD. The wetting promoter enhances wetting of the adhesive material on the bonded surfaces of the substrates.
    Type: Grant
    Filed: March 30, 1999
    Date of Patent: December 26, 2000
    Inventors: Jia Ji (George) Guan, Roland P. Zaiss