Abstract: Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antireflective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

Abstract: Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

Abstract: Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.

Abstract: The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160.degree. C., and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160.degree. C. to about 250.degree. C. that they remain soluble in common lithographic developers and strippers.The present invention also discloses resists comprising substituted polyvinyl benzoates which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow.

Abstract: A method is provided for creating multilayer patterned films wherein at least one layer is an etch-resistant patterned layer, and wherein either positive or negative tone patterns can be obtained.The etch-resistant patterned layer is obtained by reacting a patterned polymeric film containing reactive functional groups with an organometallic reagent such as a silicon-containing compound. The pattern is subsequently transferred through adjacent polymeric layers using an oxygen plasma or equivalent dry-etch method.