Patents by Inventor George J. Matarese

George J. Matarese has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for metallizing through holes in thin film substrates, and resulting devices
    Patent number: 5525369
    Abstract: A method for vapor phase depositing a thin seed layer of, for example, chromium and copper onto the side walls of through holes in thin film substrates of, for example, polyimide is disclosed. This method is useful in fabricating devices such as a thin film semiconductor chip carrier in which a semiconductor chip mounted on one major surface of the chip carrier is electrically connected to a ground plane and/or a power conductor on the other major surface of the chip carrier via one or more metallized through holes.
    Type: Grant
    Filed: November 16, 1993
    Date of Patent: June 11, 1996
    Assignee: International Business Machines Corporation
    Inventors: Kim J. Blackwell, Pei C. Chen, Stephen E. Deliman, Allan R. Knoll, George J. Matarese, Richard D. Weale
  • Electronic package including lower water content polyimide film
    Patent number: 5461203
    Abstract: The adhesion of chromium-copper layer to polyimide has been greatly improved by a method which provides controlled reduction, rather than total elimination, of water content in the polyimide. The electronic packaging device which incorporates the flexible circuit prepared by the method exhibits greatly improved reliability. It is believed that the invention can be used to improve the adhesion between other organic materials having moisture affinity and materials comprising in-organics or between two organic materials.
    Type: Grant
    Filed: May 6, 1991
    Date of Patent: October 24, 1995
    Assignee: International Business Machines Corporation
    Inventors: Kim J. Blackwell, Pei C. Chen, Frank D. Egitto, Allan R. Knoll, George J. Matarese, Luis J. Matienzo
  • Method for metallizing through holes in thin film substrates, and resulting devices
    Patent number: 5288541
    Abstract: A method for vapor phase depositing a thin seed layer of, for example, chromium and copper onto the side walls of through holes in thin film substrates of, for example, polyimide is disclosed. This method is useful in fabricating devices such as a thin film semiconductor chip carrier in which a semiconductor chip mounted on one major surface of the chip carrier is electrically connected to a ground plane and/or a power conductor on the other major surface of the chip carrier via one or more metallized through holes.
    Type: Grant
    Filed: October 17, 1991
    Date of Patent: February 22, 1994
    Assignee: International Business Machines Corporation
    Inventors: Kim J. Blackwell, Pei C. Chen, Stephen E. Deliman, Allan R. Knoll, George J. Matarese, Richard D. Weale