Abstract: This invention is a semiconductor vertical cavity surface emitting laser comprising a lasing cavity with an active layer, a bottom (rear) mirror and a top (front) mirror, and a front and rear electrodes for applying excitation current in direction substantially parallel to the direction of optical propagation. In accordance with this invention the front mirror comprises a thin, semitransparent metal layer which also acts as the front electrode. The metal layer is upon a highly doped layer forming a non-alloyed ohmic contact. The metal is selected from Ag and Al and is deposited in thickness ranging from 5 to 55 nm. The VCSEL is a semiconductor device wherein the semiconductor material is a III-V or II-VI compound semiconductor. For a VCSEL with GaAs active layer, the light output from the front metal mirror/electrode side yields a high external differential quantum efficiency as high as 54 percent. This is the highest quantum efficiency obtained in VCSEL structures.

Abstract: This invention is directed to a process of producing semiconductor devices which involves deposition of protective glass layers by a particle beam technique from targets of phosphosilicate glass, as well as a process for production of such targets. The phosphosilicate glass containing 1-15 mole percent P.sub.2 O.sub.5 is produced by a sol/gel technique which involves mixing of a fumed silica, with a surface area of 50-400 m.sup.2 /g, preferably about 200 m.sup.2 /g, with phosphoric acid and water to form a sol with 20-55 wt. % silica, allowing it to gel, drying at ambient conditions, dehydrating at about 650.degree. C. in an atmosphere of an inert gas and chlorine and fluorine containing gases, heating up at a certain rate of from 100.degree. to 180.degree. C. per hour to a peak sintering temperature below 1200.degree. C. and cooling so as to produce amorphous and transparent glass suitable for use as a target. The glass layers are highly advantageous as encapsulating layers, diffusion barrier layers, etc.

Abstract: This invention is directed to the fabrication of semiconductor devices, especially those comprising III-V and II-VI compound semiconductor materials, and involves Rapid Thermal Annealing (RTA) of semiconductor wafers, especially those implanted with a dopant(s). The invention is also concerned with a black-box implement used in combination with the RTA. The process includes enclosing a wafer to be annealed within a "black-box" comprising components of a black body material and subjecting the black box with the wafer therein to an RTA.

Abstract: Semiconductor devices are described which are made by a process involving the use of certain types of glass layers. These glass layers have high silica content, small amounts of boron oxide and optionally small amounts of aluminum oxide. The glass layers are put down by e-beam deposition procedure using a glass target made from restructured glass. Commercial availability of such glass makes the procedure very convenient. Such glass layers are advantageously used as barrier layers in annealing procedures used when semiconductors are doped (e.g., ion implantation in semiconductors) and as encapsulating layers in finished devices.

Abstract: Disclosed is a device including a surface coating for passivation or anti-reflection, and a method of manufacture. The coating comprises ZrO.sub.2 doped with yttrium, magnesium or calcium. The doped ZrO.sub.2 is preferably deposited on the device surface by electron-beam evaporation from a single crystal source of ZrO.sub.2 and Y.sub.2 O.sub.3, MgO or CaO.

Abstract: A fabrication technique is described for making various devices in which a type of glass is used as a surface protection layer. The glass layers are put down by particle bombardment (generally sputtering or e-beam bombardment) of a phosphorus-containing silicate glass target. Devices with such layers are also described. Such glass layers are highly advantageous as encapsulating material, diffusion barrier layers, etc., particularly for optical type devices and certain semiconductor devices. Particularly important is the preparation procedure for the glass target used in the bombardment process. The glass layers are moisture stable, act as excellent barriers against diffusion, and are usable up to quite high temperatures without cracking or peeling. The glass layers also provide long-term protection against atmosphere components including water vapor, oxygen, atmosphere pollution contaminants, etc.

Abstract: Proposed is a method of fabricating III-V and II-VI compound semiconductors and a resulting product where there is formed on the surface a coating which can function as a diffusion mask and/or a passivation layer. The coating is a silicon layer deposited by a method which does not damage the semiconductor surface.

Abstract: The invention is a process for putting down coatings of aluminum oxide on optical surfaces using electron-beam deposition in an oxygen-enriched atmosphere. Particularly good results are obtained when oxygen is flowed over or directed at the surface to be coated. Such coatings have extremely low losses compared to many conventional optical coatings and are particularly useful for anti-reflection coatings on various devices. In particular, for optical devices with indium phosphide surfaces operating at wavelengths near 1.3 .mu.m, the optical properties of aluminum oxide coatings are near optimum for anti-reflection coatings and the thermal expansion characteristics are a close match to those of indium phosphide.

Abstract: A process is described for doping compound semiconductors using a metal fluoride (e.g., ZnF.sub.2) as the source of dopant. The anhydrous metal fluoride is put down on the surface of the compound semiconductor, capped with a suitable encapsulant and heat treated to promote the diffusion. The heat treatment can be carried out in air without danger of surface damage to the compound semiconductor. Also, the diffusion is better controlled as to depth of diffusion and boundary delineation.

Abstract: A process is described for fabricating various optical devices including photodiodes in which a protective dielectric layer is put down on the surface of the device prior to heating to temperatures over about 250-300 degrees C. Such devices have excellent performance characteristics including low dark current and low noise figures.

Abstract: A process is described for producing devices and articles with gold films made by gold evaporation in which certain fluoride compounds are used to insure good adhesion of the gold film to the substrate. The process is particularly applicable to the production of gold films on non-metallic surfaces such as ceramic and glass surfaces. This procedure not only insures better adhesion of the gold film to the surface, but also permits greater processing variations without adversely affecting film adhesion.

Abstract: Display devices are described which contain organic quinones or diones as active material. These devices exhibit high optical contrast, pleasing and striking colors and unusually low power consumption. Particularly advantageous is the fact that these display devices may exhibit non-linear behavior (sharp thresholds) which permit multiplexing. This is highly advantageous in display device applications.

Abstract: Display devices are described which contain, in addition to organic quinones and suitable organic solvent, a solid ionic conductor. Such display devices are advantageous because of exceptional persistence of the display. Thus, an image may be retained without application of electrical energy. In addition, these displays exhibit high optical contrast and low power consumption. Under certain conditions, these devices are non-linear (exhibit sharp thresholds) which permit multiplexing. This is highly advantageous in display device applications.

Abstract: An electrodeposition display device is described which uses an electrolyte containing silver species and certain anion species including iodide bromide or chloride. The electrolyte also contains a substituted ammonium halide such as tetrabutyl ammonium iodide. Such display devices have high contrast, large viewing angle and rapid redissolution of the display.

Abstract: An electrodeposition display device is described which uses an electrolyte containing silver species and certain anion species including iodide and bromide. The electrolyte also contains an opacifier made up of solid semiconductor substance and solid insulator substance. Such display devices have high contrast, large viewing angle and a pleasing variety of colors including blue, red and brown.

Abstract: Certain structures are described for solid state electrical switches which employ electrochromic material. These structures involve use of a common base contact for both switching and readout circuits. The structures are particularly easy to fabricate using integrated circuit techniques and exhibit reduced electrical shorts due to reduced migration of metallic ions.

Abstract: A process is described for producing devices with gold films on surfaces composed of certain inorganic fluoride compounds. An adhesion compound such as lead fluoride, cadmium fluoride or tin fluoride or mixtures of these compounds is interspersed between inorganic fluoride surface and gold film. This process is particularly attractive for the fabrication of electrochromic display devices and solid-state switches. This procedure insures good adhesion of gold film to inorganic fluoride and insures high reliability in the manufacture of such devices. In addition, electrodes made in accordance with the invention have highly desirable electrical characteristics including ohmic resistance characteristics and low electrode resistances.