Abstract: A method of measuring the thickness of ultra-thin (e.g., <200 Å) oxide formed on a semiconductor device uses a reference sample (i.e., another silicon wafer) which has been pre-processed to include a relatively thick oxide surface layer. The thickness of the reference oxide (t) is measured using any conventional technique (such as an ellipsometer). An ultra-thin oxide is then simultaneously formed on both the reference sample and semiconductor device. The total oxide thickness (T) of the dual-layer structure on the reference sample is then measured (again, using any conventional technique), and the difference between the two measured values (T−t=&dgr;) is defined as the thickness of the ultra-thin oxide layer.

Abstract: A method and apparatus for stabilizing the wavelength of a laser are disclosed. The invention provides a way to stabilize a laser for applications in dense wavelength division multiplexing (DWDM) systems where frequency spacing is crucial. The invention accomplishes laser stabilization by generating one or more optical paths which are passed through one or more filters to obtain one or more signals which are a function of frequency. Another optical path which does not contain a filter is generated to obtain a signal which is a function of power. The frequency signal(s) and the power reference signal are then converted from optical to electrical and from analog-to-digital. A microcontroller is then used to normalize one or more selected frequency paths with respect to the optical power path, process the signals via software code, and generate a signal which provides feedback to the laser for stabilization.

Abstract: A method for reducing optical loss in opto-electronic devices includes passivating P-type dopant impurities formed within various cladding and contact layer films. The passivating species is atomic hydrogen produced by a hydrogen containing plasma. The atomic hydrogen complexes with P-type dopant impurities to form electrically neutral pairs which are void of free carriers. Absorption, and loss, of the optical wave is therefore suppressed as it propagates through the P-doped layers because of the reduced free carrier concentration in the P-doped layers.

Abstract: A method of measuring the thickness of ultra-thin (e.g., <200 Å) oxide formed on a semiconductor device uses a reference sample (i.e., another silicon wafer) which has been pre-processed to include a relatively thick oxide surface layer. The thickness of the reference oxide (t) is measured using any conventional technique (such as an ellipsometer). An ultra-thin oxide is then simultaneously formed on both the reference sample and semiconductor device. The total oxide thickness (T) of the dual-layer structure on the reference sample is then measured (again, using any conventional technique), and the difference between the two measured values (T−t=&dgr;) is defined as the thickness of the ultra-thin oxide layer.

Abstract: A method and apparatus for stabilizing the wavelength of a laser are disclosed. The invention provides a way to stabilize a laser for applications in dense wavelength division multiplexing (DWDM) systems where frequency spacing is crucial. The invention accomplishes laser stabilization by generating an optical path which is passed through a filter to obtain a signal which is a function of frequency. A second optical path which does not contain a filter is generated to obtain a signal which is a function of power. The signals are then converted from optical to electrical and from analog to digital, and a microcontroller is used to normalize the frequency path with respect to the optical power path, process the signals via software code, and generate a signal which provides feedback to the laser for stabilization.

Abstract: A system for flipping a semiconductor workpiece on its thin edge for microscope inspection of a workpiece facet is disclosed. The system has a holding device attached to a handling block. The holding device picks a workpiece by one of its thin edges. The edge of the workpiece may be attached to the holding device by vacuum. Then an operator rotates the handling block ninety degrees, which in turn rotates the holding device and workpiece ninety degrees. After rotation, one of the workpiece facets faces upward and perpendicular to the microscope for proper inspection of the facet.

Abstract: A cleaving apparatus, system and method which inhibit damage to cleave edges of laser bars are described. The cleaving apparatus includes a cleaving device having a first and a second slope meeting at a solitary cleave line. The slopes are angled to provide a solitary cleave point at the cleave line. Preferably, the first slope is between zero and four degrees and the second slope is about twenty degrees above a support structure upon which the cleaving device is mounted. A source of air may optionally provide air directed at the cleave line to assist in cleaving the laser bars.

Abstract: A system is provided for removing large semiconductor work pieces from an adhesive film. A pick and place apparatus is provided with a collet bar with elongated sides and opposed ends. A channel extends into a cavity on a lower surface of the collet bar. The channel receives a vacuum. The collet bar is angled from a longitudinal axis of the larger work piece to be removed. The work piece may be aligned with a cylindrical roller located under the adhesive film. The angle is chosen to extend the bar across a majority of the width of the work piece. By lowering the collet bar, a first end contacts the work piece, which may be tilted on the roller. Further lowering of the collet bar tilts the semiconductor work piece up into the same plane as the lower surface of the collet bar.

Abstract: A method for unblocking a vacuum collet channel clogged with solder includes moving a solder-clogged collet into contact with a preform of solder, and melting the solder clog and the preform into a single melted mass, cooling the melted mass to solidify it, and moving the collet away from the cooled mass, leaving the clog behind.

Abstract: A demounting apparatus is described which releases semiconductor work pieces from an adhesive support structure. The demounting apparatus includes a conduit with a pair of opposed openings. A support structure is placed over one of the openings with a work piece mounted on a lower surface thereof. A vacuum is exerted on the conduit through a constricted outlet, thereby creating a pressure differential. The lower pressure within the demounting apparatus causes the support structure to elastically deform, thereby reducing its adherence on the work piece. The work piece is dislodged from the support structure and caught by a cushion positioned in the other opening. The cushion is pushed inwardly by the pressure differential. Other structures for releasing the work piece are also disclosed.

Abstract: A device is provided for cleaving semiconductor products or the like. The device may be formed of an inlet for receiving pressurized gas, an adjustable slot for directing the gas toward the products, and a movable flow control member. According to one aspect of the invention, the flow control member is located within a housing that also defines the inlet and the adjustable slot. A cover may be located on the front of the housing. The cover may have a lower edge that forms one side of the slot. The other side of the slot may be formed by the movable flow control member. The cleave device may have an uncomplicated, compact construction. The cleave device may be operated with a flexible product handling system. That is, the brittle products may be handled within opposed flexible sheets. The sheets may be used to locate the products over a ledge (a cleaving position) where they are bent to cause cleaving along crystal planes initiated at scribe or score lines.

Abstract: A method for fabricating a Fabry-Perot laser having a cavity length and facet reflectivity product tuned to cause the laser to exhibit a relaxation oscillation frequency of at least 10 GHz, wherein the laser is capable of being modulated at 10 Gb/sec at drive currents between about 20 and 40 mA.

Abstract: A wavelength stabilized laser system includes a laser that produces a laser light having an amplitude and a wavelength that varies as a function of a temperature of the laser. A temperature control device controls the temperature of the laser. A beam splitter deflects a portion of the laser light. A first detector receives the portion of the laser light from the beam splitter and provides a first signal representing the amplitude of the laser light. A filter has a gain that is a function of the wavelength of the laser light. The filter receives the laser light and outputs a filtered light having an amplitude that varies with the wavelength of the laser light. A second detector provides a second signal representing the amplitude of the filtered light. A sealed housing contains the laser, the first and second detectors and the filter. The housing has a window.

Abstract: An apparatus is provided for cleaving a laser bar into semiconductor chips. The apparatus includes a supporting structure on which a member slides. The apparatus also includes a pair of film layers. The laser bar is positioned between the film layers. A chamber is sealed to the top film layer. The chamber has an inlet through which gas is input. The movement of the member and the downward force caused by the buildup of gas pressure in the chamber induce cleaving of the laser bar at predetermined locations. The laser bar may have score marks at the predetermined locations to produce weak points. Pressure pulses may be coordinated with the movement of the member to break the laser bar at the desired locations.

Abstract: A method and apparatus are provided for freeing laser bars stuck in a facet coating fixture. A roller device is provided that rolls into a facet coating fixture channel and applies a downward force to a stuck laser bar. The roller device provides an uncomplicated and reliable system for handling the bars.

Abstract: A coating fixture adapted to extricate a jammed connector web is described. The coating fixture includes a pair of vertical supports. Each support has a first portion spaced apart from a second portion. Springs are placed between the first and second portions to allow movement of the first portions relative to the second portions. The second portions may be anchored to prevent their movement.

Abstract: An arrangement for providing attachment and alignment between an array of surface emitting lasers and an array of optical fibers utilizes a first substrate for supporting the laser array and a second substrate for supporting the fibers. The second substrate is formed to including a plurality of apertures that are disposed to self-align with the laser array upon attachment. Alignment fiducials may be formed on both substrates to facilitate the alignment.

Abstract: A method for testing semiconductor laser devices is described. The method includes testing a monolithically integrated semiconductor laser device via electrical contact testing and/or far field testing. These tests will provide the total performance of the entire device. Further, the method includes accurate cleaving off of a portion of the laser device and re-testing to determine the relative performance of the remainder of the device. Through comparison of the test and re-test results, it is possible to reduce the design cycle for monolithically integrated semiconductor laser devices by detecting design flaws and imperfections or by ascertaining a more advantageous design.

Abstract: A wavelength-stabilized laser system includes a laser that produces a laser light. The laser light has an amplitude and a wavelength that varies with the temperature of the laser and/or a bias signal provided to the laser. A temperature control device controls the temperature of the laser. A first detector outputs a first signal representing an amplitude of a laser light. A filter receives the laser light and outputs a filtered light having an amplitude that varies with the wavelength of the laser light. A second detector outputs a second signal representing the amplitude of the filtered light. An electromagnetic radiation source transmits electromagnetic radiation through the filter and through a diverging lens. A third detector receives the electromagnetic radiation that passes through the diverging lens. The second detector may be between the diverging lens and the third detector. The third detector outputs a third signal representing an amplitude of the electromagnetic radiation.

Abstract: A scribing machine adapter plate is configured to receive and couple a hoop assembly to a chuck on a scribing machine. The adapter plate includes an upper surface and an inner annular vacuum groove and an outer annular vacuum groove formed in the upper surface. A third vacuum groove extends radially between, and communicates with, the inner and outer grooves. The outer vacuum groove includes a vacuum inlet hole that extends from the groove through the adapter plate to provide communication between a vacuum channel in the chuck and the vacuum grooves in the plate. The polymer film of the hoop assembly is disposed on the upper surface to seal the vacuum grooves to hold the film in place during scribing of materials placed on the film.