Abstract: A silica-based core rod is traversed by a heat source along its longitudinal axis, to provide heated, softened regions. During the traverse, compressive or tensile movements are provided along the rod's longitudinal axis, these movements inducing, respectively, increases or decreases in the core diameter at the softened regions. By providing selective core diameter increases and/or decreases across the entire length of the core rod, a desired core diameter profile is attained. It is possible to attain a substantially uniform core diameter, or a varying core diameter profile that provides particular properties, such as systematically varying dispersion. In addition, due to the ability to increase core diameter and core rod diameter in a controlled manner, it is possible to make larger core rods, and in turn larger fiber preforms, than presently possible.

Abstract: An improved process for fabricating a refractory dielectric article, in particular silica optical fiber, is provided. The fabrication process involves joining of two elongated bodies—typically silica preforms—end-to-end by use of an isothermal plasma torch technique. A long preform made in this manner allows drawing of optical fiber with less down-time and waste than current processes. The plasma torch technique also produces low perturbations within the resultant preform, thereby increasing the amount of usable fiber.

Abstract: In a multi-layered dielectric mirror the higher refractive index layers comprise ZnS and the lower refractive index layers comprise a composite of approximately 95%MgF2 and 5%CaF2 by mole fraction. In one embodiment, the fluoride layers are e-beam deposited from an essentially eutectic melt of the two fluorides. In another embodiment, the semiconductor surface on which the mirror is formed is protected by an aluminum borosilicate glass layer. Application of the invention to the design and fabrication of VCSELs is also described.

Abstract: A VCSEL comprises separate current and optical guides that provide unique forms of drive current and transverse mode confinement, respectively. In one embodiment, the optical guide comprises an intracavity high refractive index mesa disposed transverse to the cavity resonator axis and a multi-layered dielectric (i.e., non-epitaxial) mirror overlaying the mesa. In another embodiment, the current guide comprises an annular first electrode which laterally surrounds the mesa but has an inside diameter which is greater than that of an ion-implantation-defined current aperture. The current guide causes current to flow laterally from the first electrode along a first path segment which is essentially perpendicular to the resonator axis, then vertically from the first segment along a second path segment essentially parallel to that axis, and finally through the current aperture and the active region to a second electrode.

Abstract: A high quality interface between a GaAs-based semiconductor and a Ga.sub.2 O.sub.3 dielectric an be formed if the semiconductor surface is caused to have less than 1% of a monolayer impurity coverage at completion of the first monolayer of the Ga.sub.2 O.sub.3 on the surface. This is achieved, for instance, by preparing the surface of a GaAs wafer under UHV conditions in a first growth chamber, transferring the wafer through a transfer module under UHV to a second growth chamber that is also under UHV, and growing the dielectric by evaporation of Ga.sub.2 O.sub.3 from a solid source, the process carried out such that the integrated impurity exposure of the surface is at most 100 Langmuirs. Articles according to the invention have low interface state density (<10.sup.11 /cm.sup.2 .multidot.eV) and interface recombination velocity (<10.sup.4 cm/s). Semiconductor/Ga.sub.2 O.sub.3 structures according to the invention can be used advantageously in a variety of electronic or optoelectronic devices, e.g.

Abstract: The invention is an apparatus and method for cleaving a semiconductor bar and coating the cleaved facets within a vacuum environment. The apparatus is a fixture having at least one rotator for cleaving one or more semiconductor samples into semiconductor bars and positioning the semiconductor bars for immediate coating of their cleaved facets. The fixture is operably positioned within a processing chamber and exposed to a conventional coating medium before, during or immediately after cleaving the semiconductor sample. The fixture cleaves the semiconductor samples in a manner that reduces semiconductor sample waste and also allows the processing environment requirements to be reduced compared to other cleaving and coating techniques. A single actuation feed-through mechanism actuates the fixture from outside of the processing chamber.

Abstract: A method is disclosed for growing neodymium doped yttrium aluminum garnet crystals from a melt containing constituent oxides, lead oxide, lead fluoride, and boron trioxide. By subjecting the melt to a controlled temperature cycle while maintaining a temperature gradient in the melt, large size, high quality crystals are obtained. Crystals produced by the disclosed method are suited for laser application.