Abstract: A method and apparatus to provide electrostatic discharge (ESD) protection to electronic circuits using a gate clamp circuit.

Abstract: A method and apparatus to provide electrostatic discharge (ESD) protection to electronic circuits using a gate clamp circuit.

Abstract: A method and apparatus to provide electrostatic discharge (ESD) protection to electronic circuits using a gate clamp circuit.

Abstract: Systems and methods for stacked die memory depth expansion. In accordance with a first embodiment of the present invention, a circuit comprises a first memory input enabling depth expansion in a memory. The circuit further comprises a second memory input enabling address range selection in a memory and a plurality of address inputs accessing an expanded memory depth. The circuit also comprises one or more external chip enable inputs and a decoding logic coupled to the first memory input, second memory input, plurality of address inputs and the external chip enable input, wherein the decoding logic generates an internal chip enable signal and a stacked die select signal.

Abstract: A multi-port memory cell (200) can be formed from seven transistors. Single ended write operations can be performed without a boosted word line voltage or variable power supply. A data value (D/DB) stored in the memory cell (200) can be cleared by shorting complementary data nodes (204-0 and 204-1) together. Write data can then be placed on a bit line. Complementary data nodes (204-0 and 204-1) can then be isolated once again, resulting in the write data being latched within the memory cell (300). An access method (700) for a multi-port memory cell is also described.

Abstract: A memory having a circuit including a built-in address counter with a test mode. The address counter may be used to generate the memory array addressing for the different array test patterns. The circuit may comprise a logic circuit and a counter circuit. The logic circuit may be configured to generate one or more control signals in response to one or more control inputs. The counter circuit may be configured to generate a first counter output and a second counter output in response to (i) the control outputs and (ii) one or more inputs. The counter may comprise a first portion configured to generate the first counter output and a second portion configured to generate the second counter output.

Abstract: A method of generating write control signals insensitive to glitches on a data input signal comprising the steps of (A) enabling a write of a first or second value in response to a data input transition, (B) holding in a ready state until the data input is stable and (C) writing stable data into a memory array.

Abstract: A circuit and method comprising (a) a first circuit configured to generate an output signal having a variable pulse width in response to an (i) input signal and (ii) a control signal and (b) a second circuit configured to generate the control signal in response to (i) the input signal and (ii) a test input. In one example, the first circuit may comprise a register configured to present the output signal and an edge detection circuit configured to present a second control signal to said second circuit. In another example, the second circuit may comprise a plurality of first gates that may generate the output signal in further response to the second control signal.

Abstract: An apparatus comprising a first circuit, a reset circuit and an output circuit. The first circuit may be configured to generate one or more state signals in response to (i) a first and a second write control signals and (ii) one or more control signals. The reset circuit may be configured to generate the one or more control signals in response to (i) a global write signal and (ii) the first and second state signals. The output circuit may be configured to generate a third and fourth write control signal in response to (i) the global write signal (ii) a data input signal and (iii) the first and second state signals. In one example, the third and fourth write control signals may generate a pulse on either the third or the fourth write control signals in response to a transition of the data input signal.

Abstract: A memory having a circuit including a built-in address counter with a test mode. The address counter may be used to generate the memory array addressing for the different array test patterns. The circuit may comprise a logic circuit and a counter circuit. The logic circuit may be configured to generate one or more control signals in response to one or more control inputs. The counter circuit may be configured to generate a first counter output and a second counter output in response to (i) the control outputs and (ii) one or more inputs. The counter may comprise a first portion configured to generate the first counter output and a second portion configured to generate the second counter output.

Abstract: A reference voltage generator may include an input for receiving a first voltage for input to a sense amp. The reference voltage generator may also include an output for outputting a second voltage for input to the sense amp. The second voltage is influenced by the first voltage. Alternatively, a reference voltage generator may include a first input for receiving a first voltage on a first bitline. The reference voltage generator may also include a first output for outputting a second voltage on a second bitline. The second voltage is influenced by the first voltage. Alternatively, a reference voltage generator may include a first input for receiving a first voltage on a first transmission busline. The voltage generator may also include a first output for outputting a second voltage on a second transmission busline. The second voltage is influenced by the first voltage.

Abstract: A memory device includes a random access memory (RAM) cell accessible through a RAM wordline and coupled between first and second bitlines; a read only memory (ROM) cell accessible through a ROM wordline and having an output coupled to the first bitline and an input configured to receive a first voltage signal; and a reference voltage generator having a first input coupled to the first bitline, a second input configured to receive the first voltage signal, and an output coupled to the second bitline. The memory device may further include a bitline load having an output coupled to the first bitline. A virtual ground driver configured to produce the first voltage signal may be coupled to the input of the read only memory cell. Further, column select pass gates configured to be under the control of a logic signal and having a first input coupled to the first bitline, a second input coupled to the second bitline, a first output and a second output may be provided.

Abstract: A circuit and method for generating a global write enable signal for use in an SRAM partitioning scheme. The global write enable signal is generated by taking a combination of the individual write enable signals and presenting them as a global write control. The global write control signal allows all of the particular data groups to have common timing. The particular SRAM data groups may implement configuration dependent functionality which can be grouped with other data partitions in the array. A particular SRAM data group may share local decode and write control circuitry with other data groups. Particular SRAM data groups not selected for writing have their write data inputs driven to an inactive state during the WRITE.

Abstract: A power-on reset control circuit and associated method for deactivating a global power-on-reset signal based on whether circuitry, critical to correct functionality of an electronic system employing the power-on reset, is functioning correctly. The power-on reset control circuit comprises a control emulation circuit for transmitting a control signal through a first control line to indicate that the circuitry is operating correctly. The power-on reset control circuit further comprises a control verification circuit, coupled to the control emulation circuit through the first control line, for deactivating the global power-on reset signal upon receiving an active local power-on reset signal indicating that the power source is providing a voltage at an operating threshold level and the active control signal from the control emulation circuit.

Abstract: The present invention concerns data transition method and apparatus for driving a set of write data signals to an inactive (or deasserted) state upon completion of a WRITE to a particular group of memory cells. The present invention drives the write data signals to a an inactive state to end a WRITE without waiting for the end of the write control pulse. The present invention triggers a group of data write buffers to drive one of the write data signals to a "0" at the beginning of the WRITE control pulse or at a data input transition during a WRITE. A delayed transition of the write data signals may be used to drive both the write data signals to a "1"? to end the WRITE within a particular memory group. The write data transition detection is accomplished at the write data inputs of the groups of memory cells without relying on global chip data input pin transition detection and pulse width setting.

Abstract: A power-on reset control circuit and associated method for deactivating a global power-on-reset signal based on whether circuitry, critical to correct functionality of an electronic system employing the power-on reset, is functioning correctly. The power-on reset control circuit comprises a control emulation circuit for transmitting a control signal through a first control line to indicate that the circuitry is operating correctly. The power-on reset control circuit further comprises a control verification circuit, coupled to the control emulation circuit through the first control line, for deactivating the global power-on reset signal upon receiving an active local power-on reset signal indicating that the power source is providing a voltage at an operating threshold level and the active control signal from the control emulation circuit.

Abstract: A user configurable circuit contains clock logic, a switching element and a data path circuit. Input data is received in the switching element, and the switching element and the data path circuit constitute the entire data path for the circuit. A plurality of user configurable inputs are received to configure the circuit for a particular user application. The clock logic and the switching element implement a logic function that is configurable by the user configurable inputs. The logic function is pre-processed in the clock logic so that minimal delay occurs in the data path. In addition, the propagation delay through the switching element and the register is independent of the user configurable inputs. The user configurable circuit of the present invention has application for use as a macro cell for a programmable logic device permitting the user to configure the circuit as a D-type flip-flop, a T-type flip-flop. In addition, the user selects the polarity for the output circuit.

Abstract: A user configurable circuit contains clock logic, a switching element and a data path circuit. Input data is received in the switching element, and the switching element and the data path circuit constitute the entire data path for the circuit. A plurality of user configurable inputs are received to configure the circuit for a particular user application. The clock logic and the switching element implement a logic function that is configurable by the user configurable inputs. The logic function is pre-processed in the clock logic so that minimal delay occurs in the data path. In addition, the propagation delay through the switching element and the register is independent of the user configurable inputs. The user configurable circuit of the present invention has application for use as a macro cell for a programmable logic device permitting the user to configure the circuit as a D-type flip-flop, a T-type flip-flop. In addition, the user selects the polarity for the output circuit.

Abstract: A method and apparatus are disclosed for writing to a large content addressable memory (CAM) array without causing substantial power supply current surges, for providing fully static CMOS memory cells, for providing a consistent precharge of bit and bit bar lines, for providing a column write capability, and for increasing a read current while reducing a read disturbance probability. Each memory cell in the CAM array has (a) a data write circuit for accepting data, (b) a latch circuit for latching the data in the memory cell, (c) a hold circuit to allow holding the data or writing new data, (d) a data compare circuit for comparing the new data to the stored data, and (e) a data read circuit for reading the stored data.

Abstract: A user configurable circuit contains clock logic, a switching element and a data path circuit. Input data is received in the switching element, and the switching element and the data path circuit constitute the entire data path for the circuit. A plurality of user configurable inputs are received to configure the circuit for a particular user application. The clock logic and the switching element implement a logic function that is configurable by the user configurable inputs. The logic function is pre-processed in the clock logic so that minimal delay occurs in the data path. In addition, the propagation delay through the switching element and the register is independent of the user configurable inputs. The user configurable circuit of the present invention has application for use as a macro cell for a programmable logic device permitting the user to configure the circuit as a D-type flip-flop, a T-type flip-flop. In addition, the user selects the polarity for the output circuit.