Abstract: An electroluminescent (EL) device, including a semiconductor structure, a first electrode, and a second electrode. The semiconductor structure includes: a first higher mobility semiconductor layer having a first mobility; a second higher mobility semiconductor layer having a second mobility; and a lower mobility semiconductor layer formed between the first higher mobility semiconductor layer and the higher mobility second semiconductor layer. The lower mobility semiconductor layer has a third mobility that is less than the first mobility and the second mobility. The semiconductor structure includes EL semiconducting material in the first higher mobility semiconductor layer, the second higher mobility semiconductor layer, and/or the lower mobility semiconductor layer. The first electrode is coupled to the first higher mobility semiconductor layer of the semiconductor structure. The second electrode is coupled to the second higher mobility semiconductor layer of the semiconductor structure.

Abstract: A cascaded light emitting device. The cascaded light emitting device includes: a base electrode formed of a base electrode material and electrically coupled to a base voltage lead; a top electrode layer formed of a top electrode material and electrically coupled to a top voltage lead; a number of electroluminescent layers arranged between and electrically coupled to the base electrode and top electrode layer; and at least one middle electrode layer formed of a middle electrode material. Each of the middle electrodes is coupled between two juxtaposed electroluminescent layers. The electroluminescent layers include a mixed conductor that luminesces with a peak wavelength.

Abstract: An electroluminescent (EL) device, including a semiconductor structure, a first electrode, and a second electrode. The semiconductor structure includes: a first higher mobility semiconductor layer having a first mobility; a second higher mobility semiconductor layer having a second mobility; and a lower mobility semiconductor layer formed between the first higher mobility semiconductor layer and the higher mobility second semiconductor layer. The lower mobility semiconductor layer has a third mobility that is less than the first mobility and the second mobility. The semiconductor structure includes EL semiconducting material in the first higher mobility semiconductor layer, the second higher mobility semiconductor layer, and/or the lower mobility semiconductor layer. The first electrode is coupled to the first higher mobility semiconductor layer of the semiconductor structure. The second electrode is coupled to the second higher mobility semiconductor layer of the semiconductor structure.