Patents by Inventor George M. Molnar
George M. Molnar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240300808Abstract: Described herein are manufacturing techniques for achieving stress isolation in microelectromechanical systems (MEMS) devices that involve isolation trenches formed from the backside of the substrate. The techniques described herein involve etching a trench in the bottom side of the substrate subsequent to forming a MEMS platform, and processing the MEMS platform to form a MEMS device on the top side of the substrate subsequent to etching the trench.Type: ApplicationFiled: March 5, 2024Publication date: September 12, 2024Applicant: Analog Devices, Inc.Inventors: Kemiao Jia, Gaurav Vohra, Xin Zhang, Christine H. Tsau, Chen Yang, Andrew Proudman, Matthew Kent Emsley, George M. Molnar, II, Nikolay Pokrovskiy, Ali Mohammed Shakir, Michael Judy
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Publication number: 20240253979Abstract: A stress-isolated microelectromechanical systems (MEMS) device and a method of manufacture of the stress-isolated MEMS device are provided. MEMS devices may be sensitive to stress and may provide lower performance when subjected to stress. A stress-isolated MEMS device may be manufactured by etching a trench and/or a cavity in a first side of a substrate and subsequently forming a MEMS device on a surface of a platform opposite the first side of the substrate. Such a stress-isolated MEMS device may exhibit better performance than a MEMS device that is not stress-isolated. Moreover, manufacturing the MEMS device by first forming a trench and cavity on a backside of a wafer, before forming the MEMS device on a suspended platform, provides increased yield and allows for fabrication of smaller parts, in at least some embodiments.Type: ApplicationFiled: April 11, 2024Publication date: August 1, 2024Applicant: Analog Devices, Inc.Inventors: Xin Zhang, Christopher Needham, Andrew Proudman, Nikolay Pokrovskiy, George M. Molnar, II, Laura Cornelia Popa
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Patent number: 11981560Abstract: A stress-isolated microelectromechanical systems (MEMS) device and a method of manufacture of the stress-isolated MEMS device are provided. MEMS devices may be sensitive to stress and may provide lower performance when subjected to stress. A stress-isolated MEMS device may be manufactured by etching a trench and/or a cavity in a first side of a substrate and subsequently forming a MEMS device on a surface of a platform opposite the first side of the substrate. Such a stress-isolated MEMS device may exhibit better performance than a MEMS device that is not stress-isolated. Moreover, manufacturing the MEMS device by first forming a trench and cavity on a backside of a wafer, before forming the MEMS device on a suspended platform, provides increased yield and allows for fabrication of smaller parts, in at least some embodiments.Type: GrantFiled: June 8, 2021Date of Patent: May 14, 2024Assignee: Analog Devices, Inc.Inventors: Xin Zhang, Christopher Needham, Andrew Proudman, Nikolay Pokrovskiy, George M. Molnar, II, Laura Cornelia Popa, Michael Judy
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Publication number: 20210380403Abstract: A stress-isolated microelectromechanical systems (MEMS) device and a method of manufacture of the stress-isolated MEMS device are provided. MEMS devices may be sensitive to stress and may provide lower performance when subjected to stress. A stress-isolated MEMS device may be manufactured by etching a trench and/or a cavity in a first side of a substrate and subsequently forming a MEMS device on a surface of a platform opposite the first side of the substrate. Such a stress-isolated MEMS device may exhibit better performance than a MEMS device that is not stress-isolated. Moreover, manufacturing the MEMS device by first forming a trench and cavity on a backside of a wafer, before forming the MEMS device on a suspended platform, provides increased yield and allows for fabrication of smaller parts, in at least some embodiments.Type: ApplicationFiled: June 8, 2021Publication date: December 9, 2021Applicant: Analog Devices, Inc.Inventors: Xin Zhang, Christopher Needham, Andrew Proudman, Nikolay Pokrovskiy, George M. Molnar, II, Laura Cornelia Popa, Michael Judy
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Patent number: 10759659Abstract: A MEMS product includes a stress-isolated MEMS platform surrounded by a stress-relief gap and suspended from a substrate. The stress-relief gap provides a barrier against the transmission of mechanical stress from the substrate to the platform.Type: GrantFiled: October 15, 2018Date of Patent: September 1, 2020Assignee: Analog Devices, Inc.Inventors: Xin Zhang, Michael Judy, George M. Molnar, Christopher Needham, Kemiao Jia
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Publication number: 20190047846Abstract: A MEMS product includes a stress-isolated MEMS platform surrounded by a stress-relief gap and suspended from a substrate. The stress-relief gap provides a barrier against the transmission of mechanical stress from the substrate to the platform.Type: ApplicationFiled: October 15, 2018Publication date: February 14, 2019Applicant: Analog Devices, Inc.Inventors: Xin Zhang, Michael Judy, George M. Molnar, Christopher Needham, Kemiao Jia
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Patent number: 10167189Abstract: A MEMS product includes a stress-isolated MEMS platform surrounded by a stress-relief gap and suspended from a substrate. The stress-relief gap provides a barrier against the transmission of mechanical stress from the substrate to the platform.Type: GrantFiled: September 30, 2014Date of Patent: January 1, 2019Assignee: Analog Devices, Inc.Inventors: Xin Zhang, Michael W. Judy, George M. Molnar, Christopher Needham, Kemiao Jia
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Patent number: 9878901Abstract: Thick (i.e., greater than two microns), fine-grained, low-stress tungsten MEMS structures are fabricated at low temperatures, particularly for so-called “MEMS last” fabrication processes (e.g., when MEMS structures are fabricated after electronic circuitry is fabricated). Means for very accurately etching structural details from the deposited tungsten layer and for strongly and stably anchoring the tungsten layer to an underlying substrate are disclosed. Also, means for removing a sacrificial layer underlying the mobile tungsten layer without damaging the tungsten or allowing it to be drawn down and stuck by surface tension is disclosed.Type: GrantFiled: March 27, 2015Date of Patent: January 30, 2018Assignee: Analog Devices, Inc.Inventors: John A. Geen, George M. Molnar, Gregory S. Davis, Bruce Ma, Kenneth J. Cole, James Timony, Kenneth Flanders
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Publication number: 20160090297Abstract: A MEMS product includes a stress-isolated MEMS platform surrounded by a stress-relief gap and suspended from a substrate. The stress-relief gap provides a barrier against the transmission of mechanical stress from the substrate to the platform.Type: ApplicationFiled: September 30, 2014Publication date: March 31, 2016Inventors: Xin Zhang, Michael W. Judy, George M. Molnar, Christopher R. Needham, Kemiao Jia
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Publication number: 20150336790Abstract: Thick (i.e., greater than two microns), fine-grained, low-stress tungsten MEMS structures are fabricated at low temperatures, particularly for so-called “MEMS last” fabrication processes (e.g., when MEMS structures are fabricated after electronic circuitry is fabricated). Means for very accurately etching structural details from the deposited tungsten layer and for strongly and stably anchoring the tungsten layer to an underlying substrate are disclosed. Also, means for removing a sacrificial layer underlying the mobile tungsten layer without damaging the tungsten or allowing it to be drawn down and stuck by surface tension is disclosed.Type: ApplicationFiled: March 27, 2015Publication date: November 26, 2015Inventors: John A. Geen, George M. Molnar, Gregory S. Davis, Bruce Ma, Kenneth J. Cole, James Timony, Kenneth Flanders
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Patent number: 5479316Abstract: An integrated circuit metal-oxide-metal capacitor and method of making it which involves a support layer; a first conductive electrode on the support layer; a dielectric film on the first conductive electrode; a second conductive electrode disposed on the dielectric film and formed from the first level metallization interconnect layer of the integrated circuit; an interlevel dielectric layer; a first contact via extending through the interlevel dielectric layer and the dielectric film to the first conductive electrode; a second contact via extending through the interlevel dielectric layer to the second conductive electrode; and first and second terminals formed from the second level metallization interconnect layer of the integrated circuit contacting the first and second vias, respectively.Type: GrantFiled: August 24, 1993Date of Patent: December 26, 1995Assignee: Analog Devices, Inc.Inventors: Mark A. Smrtic, George M. Molnar, Jerome F. Lapham