Patents by Inventor George Malliaras
George Malliaras has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220249005Abstract: A medical device comprising a flexible electrode array having a bend radius of no more than about 2 mm; and a fluidic component, wherein the fluidic component is fluidically actuatable to cause the fluidic component to change configuration; wherein the fluidic component and the flexible electrode array are configured such that a change in configuration of the fluidic component causes a change in configuration of the flexible electrode array.Type: ApplicationFiled: July 13, 2020Publication date: August 11, 2022Applicant: CAMBRIDGE ENTERPRISE LIMITEDInventors: Christopher PROCTOR, Damiano Giuseppe BARONE, Vincenzo CURTO, Ben WOODINGTON, George MALLIARAS
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Patent number: 9530976Abstract: A method of making a structure having a patterned a base layer and useful in the fabrication of optical and electronic devices including bioelectronic devices includes, in one embodiment, the steps of: a) providing a layer of a radiation-sensitive resin; b) exposing the layer of radiation-sensitive resin to patterned radiation to form a base layer precursor having a first pattern of exposed radiation-sensitive resin and a second pattern of unexposed radiation-sensitive resin; c) providing a layer of fluoropolymer in a third pattern over the base layer precursor to form a first intermediate structure; d) treating the first intermediate structure to form a second intermediate structure; and e) selectively removing either the first or second pattern of resin by contacting the second intermediate structure with a resin developing agent, thereby forming the patterned base layer.Type: GrantFiled: November 17, 2015Date of Patent: December 27, 2016Assignee: ORTHOGONAL, INC.Inventors: Marc Ferro, George Malliaras
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Patent number: 9500952Abstract: An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process.Type: GrantFiled: December 11, 2015Date of Patent: November 22, 2016Assignee: Cornell UniversityInventors: Christopher K. Ober, George Malliaras, Jin-Kyun Lee, Alexander Zakhidov, Margarita Chatzichristidi, Priscilla Dodson
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Publication number: 20160097977Abstract: An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process.Type: ApplicationFiled: December 11, 2015Publication date: April 7, 2016Inventors: Christopher K. Ober, George Malliaras, Jin-Kyun Lee, Alexander Zakhidov, Margarita Chatzichristidi, Priscilla Dodson
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Publication number: 20160072087Abstract: A method of making a structure having a patterned a base layer and useful in the fabrication of optical and electronic devices including bioelectronic devices includes, in one embodiment, the steps of: a) providing a layer of a radiation-sensitive resin; b) exposing the layer of radiation-sensitive resin to patterned radiation to form a base layer precursor having a first pattern of exposed radiation-sensitive resin and a second pattern of unexposed radiation-sensitive resin; c) providing a layer of fluoropolymer in a third pattern over the base layer precursor to form a first intermediate structure; d) treating the first intermediate structure to form a second intermediate structure; and e) selectively removing either the first or second pattern of resin by contacting the second intermediate structure with a resin developing agent, thereby forming the patterned base layer.Type: ApplicationFiled: November 17, 2015Publication date: March 10, 2016Inventors: Marc FERRO, George MALLIARAS
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Patent number: 9217926Abstract: A method of making a structure having a patterned a base layer and useful in the fabrication of optical and electronic devices including bioelectronic devices includes, in one embodiment, the steps of: a) providing a layer of a radiation-sensitive resin; b) exposing the layer of radiation-sensitive resin to patterned radiation to form a base layer precursor having a first pattern of exposed radiation-sensitive resin and a second pattern of unexposed radiation-sensitive resin; c) providing a layer of fluoropolymer in a third pattern over the base layer precursor to form a first intermediate structure; d) treating the first intermediate structure to form a second intermediate structure; and e) selectively removing either the first or second pattern of resin by contacting the second intermediate structure with a resin developing agent, thereby forming the patterned base layer.Type: GrantFiled: November 19, 2014Date of Patent: December 22, 2015Assignee: Orthogonal, Inc.Inventors: Marc Ferro, George Malliaras
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Patent number: 9213238Abstract: An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process.Type: GrantFiled: August 28, 2014Date of Patent: December 15, 2015Assignee: Cornell UniversityInventors: Christopher K. Ober, George Malliaras, Jin-Kyun Lee, Alexander Zakhidov, Margarita Chatzichristidi, Priscilla Dodson
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Publication number: 20150205206Abstract: An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process.Type: ApplicationFiled: August 28, 2014Publication date: July 23, 2015Inventors: Christopher K. OBER, George MALLIARAS, Jin-Kyun LEE, Alexander ZAKHIDOV, Margarita CHATZICHRISTIDI, Priscilla DODSON
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Publication number: 20150140289Abstract: A method of patterning a bioresorbable material includes providing a fluoropolymer layer in a first pattern over a layer of bioresorbable material. A patterned bioresorbable material is formed by selectively removing the bioresorbable material in areas not covered by the first pattern of fluoropolymer. The fluoropolymer layer may optionally be provided using a photosensitive fluoropolymer along with fluorinated solvents for coating and developing images. The disclosed methods may provide patterned bioresorbable materials having simple or complex shapes, coarse or fine features. In some embodiments, high volume manufacturing methods such as photolithography may be used. Flexible bioelectronic devices may be provided with patterned bioresorbable materials to aid in application into biological targets, but which later bioresorb thereby imparting higher flexibility to the bioelectronic device.Type: ApplicationFiled: November 19, 2014Publication date: May 21, 2015Inventors: Marc FERRO, George MALLIARAS
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Publication number: 20150140729Abstract: A method of making a structure having a patterned a base layer and useful in the fabrication of optical and electronic devices including bioelectronic devices includes, in one embodiment, the steps of: a) providing a layer of a radiation-sensitive resin; b) exposing the layer of radiation-sensitive resin to patterned radiation to form a base layer precursor having a first pattern of exposed radiation-sensitive resin and a second pattern of unexposed radiation-sensitive resin; c) providing a layer of fluoropolymer in a third pattern over the base layer precursor to form a first intermediate structure; d) treating the first intermediate structure to form a second intermediate structure; and e) selectively removing either the first or second pattern of resin by contacting the second intermediate structure with a resin developing agent, thereby forming the patterned base layer.Type: ApplicationFiled: November 19, 2014Publication date: May 21, 2015Inventors: Marc FERRO, George MALLIARAS
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Patent number: 8846301Abstract: An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process.Type: GrantFiled: May 21, 2009Date of Patent: September 30, 2014Assignee: Cornell UniversityInventors: Christopher K. Ober, George Malliaras, Jin-Kyun Lee, Alexander Zakhidov, Margarita Chatzichristidi, Priscilla Taylor
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Patent number: 8809111Abstract: Methods and compositions for obtaining patterned structures comprising fluorine-containing polymeric materials. The fluorine-containing polymeric materials have sufficient fluorine content such that the materials can be patterned using conventional photolithographic/pattern transfer methods and maintain desirable mechanical and physical properties. The patterned structures can be used, for example, in light-emitting devices.Type: GrantFiled: October 20, 2010Date of Patent: August 19, 2014Assignee: Cornell UniversityInventors: Christopher Ober, George Malliaras, Jin-Kyun Lee, Hon Hang Fong
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Publication number: 20120305897Abstract: Methods and compositions for obtaining patterned structures comprising fluorine-containing polymeric materials. The fluorine-containing polymeric materials have sufficient fluorine content such that the materials can be patterned using conventional photolithographic/pattern transfer methods and maintain desirable mechanical and physical properties. The patterned structures can be used, for example, in light-emitting devices.Type: ApplicationFiled: October 20, 2010Publication date: December 6, 2012Applicant: CORNELL UNIVERSITYInventors: Christopher Ober, George Malliaras, Jin-Kyun Lee, Hon Hang Fong
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Publication number: 20110159252Abstract: An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process.Type: ApplicationFiled: May 21, 2009Publication date: June 30, 2011Inventors: Christopher K. Ober, George Malliaras, Jin-Kyun Lee, Alexander Zakhidov, Margarita Chatzichristidi, Priscilla Taylor
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Publication number: 20060214570Abstract: A cascaded light emitting device. The cascaded light emitting device includes: a base electrode formed of a base electrode material and electrically coupled to a base voltage lead; a top electrode layer formed of a top electrode material and electrically coupled to a top voltage lead; a number of electroluminescent layers arranged between and electrically coupled to the base electrode and top electrode layer; and at least one middle electrode layer formed of a middle electrode material. Each of the middle electrodes is coupled between two juxtaposed electroluminescent layers. The electroluminescent layers include a mixed conductor that luminesces with a peak wavelength.Type: ApplicationFiled: March 28, 2005Publication date: September 28, 2006Inventors: George Malliaras, Kiyotaka Mori, Jason Slinker, Daniel Bernards, Hector Abruna