Abstract: An adjustable write pulse generator is disclosed. The adjustable write pulse generator includes a band-gap reference current, a programmable ring oscillator, a frequency divider and a single pulse generator. The band-gap reference current circuit generates a well-compensated current over a predetermined range of temperatures needed to program a chalcogenide memory cell. The programmable ring oscillator generates a first set of continuous write “0” and write “1” pulse signals based on the well-compensated current. The frequency divider then divides the first set of continuous write “0” and write “1” pulse signals into a second set of continuous write “0” and write “1” pulse signals. The single pulse generator subsequently converts the second set of continuous write “0” and write “1” pulse signals into a single write “0” pulse signal or a single write “1” pulse signal when programming the chalcogenide memory cell.

Abstract: A write circuit for providing distinctive write currents to a chalcogenide memory cell is disclosed. The write circuit includes a current amplitude trim module, a current amplification and distribution module, and a write current shaping module. The current amplitude trim module provides a well-compensated current across a predetermined range of temperatures, voltage supplies and process corners intended for programming a chalcogenide memory cell. The current amplification and distribution module amplifies the well-compensated current in order to meet a programming requirement of the chalcogenide memory cell. The write current shaping module supplies an appropriate amount of write “0” current or write “1” current, based on the amplified current, to program the chalcogenide memory cell accordingly.

Abstract: An adjustable write pulse generator is disclosed. The adjustable write pulse generator includes a band-gap reference current, a programmable ring oscillator, a frequency divider and a single pulse generator. The band-gap reference current circuit generates a well-compensated current over a predetermined range of temperatures needed to program a chalcogenide memory cell. The programmable ring oscillator generates a first set of continuous write “0” and write “1” pulse signals based on the well-compensated current. The frequency divider then divides the first set of continuous write “0” and write “1” pulse signals into a second set of continuous write “0” and write “1” pulse signals. The single pulse generator subsequently converts the second set of continuous write “0” and write “1” pulse signals into a single write “0” pulse signal or a single write “1” pulse signal when programming the chalcogenide memory cell.

Abstract: A write circuit for providing distinctive write currents to a chalcogenide memory cell is disclosed. The write circuit includes a current amplitude trim module, a current amplification and distribution module, and a write current shaping module. The current amplitude trim module provides a well-compensated current across a predetermined range of temperatures, voltage supplies and process corners intended for programming a chalcogenide memory cell. The current amplification and distribution module amplifies the well-compensated current in order to meet a programming requirement of the chalcogenide memory cell. The write current shaping module supplies an appropriate amount of write “0” current or write “1” current, based on the amplified current, to program the chalcogenide memory cell accordingly.