Abstract: A system and method of quickly determining the parameters of an ion beam are disclosed. An ion beam, having a width and height dimension, is made up of a number of individual beamlets. By using a plurality of detectors, deployed over the entire beam, it is possible to quickly determine the mean angle of the beam at various locations. This information can then be used to adjust the beamline components. The detector allows a small portion of the beam to enter through a narrow slit. Varying voltages are applied to a set of electrostatic deflection plates, which enable rapid determination of the incoming beam angle. By positioning a plurality of these detectors along one or both dimensions of an ion beam, a profile of the beam can be quickly generated. This profile can then be used to adjust the various beam line components so as to improve the spread of the ion beam. This adjustment can either be made manually, or via an automated controller.

Abstract: A system and method of quickly determining the parameters of an ion beam are disclosed. An ion beam, having a width and height dimension, is made up of a number of individual beamlets. By using a plurality of detectors, deployed over the entire beam, it is possible to quickly determine the mean angle of the beam at various locations. This information can then be used to adjust the beamline components. The detector allows a small portion of the beam to enter through a narrow slit. Varying voltages are applied to a set of electrostatic deflection plates, which enable rapid determination of the incoming beam angle. By positioning a plurality of these detectors along one or both dimensions of an ion beam, a profile of the beam can be quickly generated. This profile can then be used to adjust the various beam line components so as to improve the spread of the ion beam. This adjustment can either be made manually, or via an automated controller.