Abstract: A mobile ion getterer is added to metalization layers on an integrated circuit or discrete device to reduce mobile ion contamination therein. Preferably, chromium is used as the mobile ion getterer and is added to an aluminum target used as the metal source for sputtering the chromium and aluminum onto the integrated circuit or discrete device. This technique removes the need for ultrahigh purity aluminum conductors or gettering material (P-glass) in contact with the metal conductors. This technique may be used with virtually all metalization apparatus and processes used for depositing metal onto semiconductor devices.

Abstract: A mobile ion getterer is added to metalization layers on an integrated circuit or discrete device to reduce mobile ion contamination therein. Preferably, chromium is used as the mobile ion getterer and is added to an aluminum target used as the metal source for sputtering the chromium and aluminum onto the integrated circuit or discrete device. This technique removes the need for ultra-high purity aluminum conductors or gettering material (P-glass) in contact with the metal conductors. This technique may be used with virtually all metalization apparatus and processes used for depositing metal onto semiconductor devices.

Abstract: A controller is associated with a cabinet which contains apparatus and components for performing operations or conducting processes. Associated with the cabinet is a housing within which is contained an air filtration material. Air is admitted and propelled for flow through that material and delivery into the confined space defined by the cabinet by a blower unit. The blower unit is controlled in response to the rate of flow of air through the housing in order to maintain a selected rate of flow in compensation for changes in impedence to flow of air through the material. Operation also is controlled in response to other parameters, such as pressure differential across the material, pressure differential across a prefilter upstream, a measure of the rate of air flow into the cabinet, ambient temperature within the cabinet, pressure differential between outside atmospheric pressure and each of the housing and the cabinet and relative humidity within the cabinet.

Abstract: Improved method and apparatus are disclosed for regenerating wet spent carbon containing volatile impurities wherein the wet spent carbon is dried in a drying zone utilizing incinerated reactivation zone gaseous effluent. The improvement of the invention provides that the portion of reactivation zone gaseous effluent used to dry the wet spent carbon in the drying zone is continuously recycled to the reactivation zone for incineration to remove any volatile impurities which may have been removed from the wet spent carbon during drying. The balance of the reactivation zone gaseous effluent may be discharged into the atmosphere without further incineration.

Abstract: Improved method and apparatus are disclosed for regenerating wet spent carbon containing volatile impurities wherein the wet spent carbon is dried in a drying zone utilizing incinerated reactivation zone gaseous effluent. The inmprovement of the invention provides that the portion of reactivation zone gaseous effluent used to dry the wet spent carbon in the drying zone is continuously recycled to the reactivation zone for incineration to remove any volatile impurities which may have been removed from the wet spent carbon during drying. The balance of the reactivation zone gaseous effluent may be discharged into the atmosphere without further incineration.