Patents by Inventor George Nohra
George Nohra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230188175Abstract: A front-end module, compatible with various baseband chipset configurations, that includes a transmit signal path having a transmit amplifier, to amplify an outgoing signal, and a coupler. The coupler diverts a first portion of the outgoing signal, to a transmit-receive switch, a second portion to a receive path switch, and a third portion to a RF-coupling port. As included is a receive signal path including a low-noise amplifier, configured to receive an incoming signal, and a receive path switch. The receive path switch receives the incoming signal, from the transmit-receive switch, and the second portion of the outgoing signal from the coupler. The receive signal path also includes a receive port configured to selectively receive, through the receive path switch, incoming signals from an antenna and the second portion of the outgoing signal. A RF coupling port connects to the coupler to receive the third portion of the outgoing signal.Type: ApplicationFiled: November 16, 2022Publication date: June 15, 2023Inventors: Sehat Sutardja, Nick Sutardja, Cheng-Hui Lin, Ahmad Abdelmajid, George Nohra
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Patent number: 9948348Abstract: A switching method and apparatus that provides high isolation between circuit arms of a mobile communication device by attenuating noise over a defined frequency range using a switched shunt LC notch filter.Type: GrantFiled: May 26, 2010Date of Patent: April 17, 2018Assignee: SKYWORKS SOLUTIONS, INC.Inventors: George Nohra, Steven C. Sprinkle
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Patent number: 9658636Abstract: Apparatus and methods for variable capacitor arrays are provided herein. In certain configurations, an apparatus includes a variable capacitor array and a bias voltage generation circuit. The variable capacitor array includes a plurality of metal oxide semiconductor (MOS) variable capacitor cells, which include one or more pairs of MOS capacitors implemented in anti-parallel and/or anti-series configurations. In certain implementations, the MOS variable capacitor cells are electrically connected in parallel with one another between a radio frequency (RF) input and an RF output of the variable capacitor array. The bias voltage generation circuit generates bias voltages for biasing the MOS capacitors of the MOS variable capacitor cells.Type: GrantFiled: November 25, 2015Date of Patent: May 23, 2017Assignee: TDK CORPORATIONInventors: Dev V. Gupta, Zhiguo Lai, George Nohra, Anuj Madan
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Patent number: 9379698Abstract: Embodiments include an apparatus, system, and method related to a switching circuit. In some embodiments, the switching circuit may include first switch including an n-channel field effect transistor (FET) in the signal path. The switching circuit may further include a second switch in shunt to the first switch. The second switch may include a discharge transistor to provide a discharge path for a body of a switch transistor. Other embodiments may be described and claimed.Type: GrantFiled: February 4, 2014Date of Patent: June 28, 2016Assignee: TriQuint Semiconductor, Inc.Inventor: George Nohra
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Publication number: 20160161970Abstract: Apparatus and methods for variable capacitor arrays are provided herein. In certain configurations, an apparatus includes a variable capacitor array and a bias voltage generation circuit. The variable capacitor array includes a plurality of metal oxide semiconductor (MOS) variable capacitor cells, which include one or more pairs of MOS capacitors implemented in anti-parallel and/or anti-series configurations. In certain implementations, the MOS variable capacitor cells are electrically connected in parallel with one another between a radio frequency (RF) input and an RF output of the variable capacitor array. The bias voltage generation circuit generates bias voltages for biasing the MOS capacitors of the MOS variable capacitor cells.Type: ApplicationFiled: November 25, 2015Publication date: June 9, 2016Inventors: Dev V. Gupta, Zhiguo Lai, George Nohra, Anuj Madan
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Patent number: 9214902Abstract: Various embodiments provide a bias circuit for a radio frequency (RF) power amplifier (PA) to provide a direct current (DC) bias voltage, with bias boosting, to the RF PA. The bias circuit may include a bias transistor that forms a current mirror with an amplifier transistor of the RF PA. The bias circuit may further include a first resistor coupled between the gate terminal and the drain terminal of the bias transistor to block RF signals from the gate terminal of the bias transistor. The bias circuit may further include a second resistor coupled between the drain terminal of the bias transistor and the RF PA (e.g., the gate terminal of the amplifier transistor). An amount of bias boosting of the DC bias voltage provided by the bias circuit may be based on an impedance value of the second resistor.Type: GrantFiled: August 27, 2013Date of Patent: December 15, 2015Assignee: TriQuint Semiconductor, Inc.Inventors: Sifen Luo, Kerry Burger, George Nohra
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Patent number: 9201442Abstract: Apparatus and methods for variable capacitor arrays are provided herein. In certain configurations, an apparatus includes a variable capacitor array and a bias voltage generation circuit. The variable capacitor array includes a plurality of metal oxide semiconductor (MOS) variable capacitor cells, which include one or more pairs of MOS capacitors implemented in anti-parallel and/or anti-series configurations. In certain implementations, the MOS variable capacitor cells are electrically connected in parallel with one another between a radio frequency (RF) input and an RF output of the variable capacitor array. The bias voltage generation circuit generates bias voltages for biasing the MOS capacitors of the MOS variable capacitor cells.Type: GrantFiled: March 31, 2015Date of Patent: December 1, 2015Assignee: NEWLANS, INC.Inventors: Dev V. Gupta, Zhiguo Lai, George Nohra, Anuj Madan
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Publication number: 20150222259Abstract: Embodiments include an apparatus, system, and method related to a switching circuit. In some embodiments, the switching circuit may include first switch including an n-channel field effect transistor (FET) in the signal path. The switching circuit may further include a second switch in shunt to the first switch. The second switch may include a discharge transistor to provide a discharge path for a body of a switch transistor. Other embodiments may be described and claimed.Type: ApplicationFiled: February 4, 2014Publication date: August 6, 2015Applicant: TriQuint Semiconductor, Inc.Inventor: George Nohra
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Publication number: 20150205318Abstract: Apparatus and methods for variable capacitor arrays are provided herein. In certain configurations, an apparatus includes a variable capacitor array and a bias voltage generation circuit. The variable capacitor array includes a plurality of metal oxide semiconductor (MOS) variable capacitor cells, which include one or more pairs of MOS capacitors implemented in anti-parallel and/or anti-series configurations. In certain implementations, the MOS variable capacitor cells are electrically connected in parallel with one another between a radio frequency (RF) input and an RF output of the variable capacitor array. The bias voltage generation circuit generates bias voltages for biasing the MOS capacitors of the MOS variable capacitor cells.Type: ApplicationFiled: March 31, 2015Publication date: July 23, 2015Inventors: Dev V. Gupta, Zhiguo Lai, George Nohra, Anuj Madan
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Patent number: 9086709Abstract: Apparatus and methods for variable capacitor arrays are provided herein. In certain configurations, an apparatus includes a variable capacitor array and a bias voltage generation circuit. The variable capacitor array includes a plurality of metal oxide semiconductor (MOS) variable capacitor cells, which include one or more pairs of MOS capacitors implemented in anti-parallel and/or anti-series configurations. In certain implementations, the MOS variable capacitor cells are electrically connected in parallel with one another between a radio frequency (RF) input and an RF output of the variable capacitor array. The bias voltage generation circuit generates bias voltages for biasing the MOS capacitors of the MOS variable capacitor cells.Type: GrantFiled: May 27, 2014Date of Patent: July 21, 2015Assignee: Newlans, Inc.Inventors: Dev V. Gupta, Zhiguo Lai, George Nohra, Anuj Madan
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Publication number: 20150061770Abstract: Various embodiments provide a bias circuit for a radio frequency (RF) power amplifier (PA) to provide a direct current (DC) bias voltage, with bias boosting, to the RF PA. The bias circuit may include a bias transistor that forms a current mirror with an amplifier transistor of the RF PA. The bias circuit may further include a first resistor coupled between the gate terminal and the drain terminal of the bias transistor to block RF signals from the gate terminal of the bias transistor. The bias circuit may further include a second resistor coupled between the drain terminal of the bias transistor and the RF PA (e.g., the gate terminal of the amplifier transistor). An amount of bias boosting of the DC bias voltage provided by the bias circuit may be based on an impedance value of the second resistor.Type: ApplicationFiled: August 27, 2013Publication date: March 5, 2015Applicant: TriQuint Semiconductor, Inc.Inventors: Sifen Luo, Kerry Burger, George Nohra
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Publication number: 20140354348Abstract: Apparatus and methods for variable capacitor arrays are provided herein. In certain configurations, an apparatus includes a variable capacitor array and a bias voltage generation circuit. The variable capacitor array includes a plurality of metal oxide semiconductor (MOS) variable capacitor cells, which include one or more pairs of MOS capacitors implemented in anti-parallel and/or anti-series configurations. In certain implementations, the MOS variable capacitor cells are electrically connected in parallel with one another between a radio frequency (RF) input and an RF output of the variable capacitor array. The bias voltage generation circuit generates bias voltages for biasing the MOS capacitors of the MOS variable capacitor cells.Type: ApplicationFiled: May 27, 2014Publication date: December 4, 2014Applicant: Newlans, Inc.Inventors: Dev V. Gupta, Zhiguo Lai, George Nohra, Anuj Madan
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Patent number: 8829967Abstract: Embodiments include an apparatus, system, and method related to a body-contacted partially depleted silicon on insulator (PDSOI) transistor that may be used in a switch circuit. In some embodiments, the switch circuit may include a discharge transistor to provide a discharge path for a body of a switch transistor. Other embodiments may be described and claimed.Type: GrantFiled: June 27, 2012Date of Patent: September 9, 2014Assignee: TriQuint Semiconductor, Inc.Inventor: George Nohra
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Publication number: 20140002171Abstract: Embodiments include an apparatus, system, and method related to a body-contacted partially depleted silicon on insulator (PDSOI) transistor that may be used in a switch circuit. In some embodiments, the switch circuit may include a discharge transistor to provide a discharge path for a body of a switch transistor. Other embodiments may be described and claimed.Type: ApplicationFiled: June 27, 2012Publication date: January 2, 2014Applicant: TRIQUINT SEMICONDUCTOR, INC.Inventor: George Nohra
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Publication number: 20110294443Abstract: A switching method and apparatus that provides high isolation between circuit arms of a mobile communication device by attenuating noise over a defined frequency range using a switched shunt LC notch filter.Type: ApplicationFiled: May 26, 2010Publication date: December 1, 2011Inventors: George Nohra, Steven C. Sprinkle