Abstract: Copper electroplating methods provide low internal stress copper deposits. Concentrations of accelerators in the copper electroplating bath vary as a function of the plating current density and the low internal stress copper deposit is observed as a matt copper deposit.

Abstract: Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.

Abstract: Monocrystalline semiconductor substrates are textured with alkaline solutions to form pyramid structures on their surfaces to reduce incident light reflectance and improve light absorption of the wafers. The alkaline baths include compounds which inhibit the formation of flat areas between pyramid structures to improve the light adsorption.

Abstract: Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.

Abstract: Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.

Abstract: Copper electroplating methods provide low internal stress copper deposits. Concentrations of accelerators in the copper electroplating bath vary as a function of the plating current density and the low internal stress copper deposit is observed as a matt copper deposit.

Abstract: Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.

Abstract: Silicon containing substrates are coated with nickel. The nickel is coated with a protective layer and the combination is heated to a sufficient temperature to form nickel silicide. The nickel silicide formation may be performed in oxygen containing environments.

Abstract: Silicon containing substrates are coated with nickel. The nickel is coated with a protective layer and the combination is heated to a sufficient temperature to form nickel silicide. The nickel silicide formation may be performed in oxygen containing environments.

Abstract: Methods of plating electrical contacts on a photosensitive device are provided. Also provided are methods of plating electrical contacts on solar cells.

Abstract: The present invention relates to new methods for delivering solutions during electronic device manufacture. Methods of the invention include delivering metallization solutions to the device at an angle of less than 90 degrees with the surface of the device. The method may further comprise partially treating the device by delivering the metallization solutions from above the device, turning the device over, and then completing treatment by delivering the metallization solutions from below the article. The method is particularly useful in the formation of printed circuit boards and other electronic packaging devices having through-holes and blind vias.

Abstract: A process for electroplating a nonconducting substrate comprising formation of a film of a conductive polymer on the surface of a nonconducting substrate and electrolytic deposition of metal thereover. The conductive film is formed by deposition of the conductive polymer onto said surface from an aqueous suspension of said polymer.

Abstract: A process for electroplating a nonconducting substrate comprising formation of a film of a conductive polymer on the surface of a nonconducting substrate and electrolytic deposition of metal thereover. The conductive film is formed by deposition of the conductive polymer onto said surface from an aqueous suspension of said polymer.

Abstract: Process for at least partially dissolving a copper oxide surface layer by contacting the surface layer with one or more copper oxide dissolving compounds. When used in the manufacture of a multilayer printed circuit board, the process improves adhesion between board layers, reduces or eliminates localized delamination of a multilayer board that occurs during through-hole drilling, and eliminates or substantially reduces the occurrence of pink ring.