Abstract: A circuit device is placed within an opening of a conductive layer which is then partially encapsulated with an encapsulant so that the active surface of the circuit device is coplanar with the conductive layer. At least a portion of the conductive layer may be used as a reference voltage plane (e.g. a ground plane). Additionally, a circuit device may be placed on a conductive layer such that an active surface of circuit device is between conductive layer and an opposite surface of circuit device. The conductive layer has at least one opening to expose the active surface of circuit device. The encapsulant may be electrically conductive or electrically non-conductive.

Abstract: Methods for forming electronic assemblies are provided. A device substrate having a plurality of electronic components embedded therein is provided. The device substrate is attached to a carrier substrate using an adhesive material. A plurality of cuts are formed through the device substrate to divide the device substrate into a plurality of portions. Each of the plurality of portions includes at least one of the electronic components. A force is applied to each of the plurality of portions in a direction away from the carrier substrate to remove the plurality of portions from the carrier substrate.

Abstract: A method is disclosed for controlling warpage in an integrated electronic panel assembly including a plurality of die embedded within an encapsulant. The method comprises determining a number of build-up layers required for the integrated panel assembly. Each build-up layer contributes an amount of concavity to the integrated electronic panel assembly. A level of global convex warpage on the integrated panel assembly is then predicted, wherein the global convex warpage is provided by the presence of an embedded ground plane (EGP) alone within the integrated panel assembly and in the absence of any build-up layers. The embedded ground plane includes openings therein for accepting at least one die within a corresponding opening and it contributes a fixed amount of global convex warpage.

Abstract: A package assembly 200 includes a semiconductor die (e.g., an RF power amplifier) 208 fixed within the cavity of a conductive leadframe 204 using a thermally and electrically-conductive adhesive material 209. The semiconductor die 209 has a first side and a second side, wherein the first side includes at least one active area, and the second side includes at least one contact region. The conductive leadframe (e.g., a copper leadframe) 204 has two planar surfaces and a cavity formed therein. The adhesive material 209 is configured to couple the semiconductor die 208 within the cavity of the conductive leadframe 204 such that the first side of the semiconductor die is substantially coplanar with the first surface of the conductive leadframe.

Abstract: A method (20) of packaging integrated circuit dies (70) includes obtaining (22) a heat spreader substrate (24) having a top surface (38) with cavities (30) formed therein, each of the cavities (30) having a cavity floor (44). A surface (74) of each die (70) is attached (66) to one of the cavity floors (44) such that a surface (72) of each die (70) and the top surface (38) of the substrate (24) are coplanar. Build-up layers (88) with electrical interconnects (97) are formed (86) over the surface (72) of each die (80) and the surface (38) of the substrate (24) to form a panel (68) of IC dies (70). Following formation of the build-up layers (88), the panel (68) is separated (108) into multiple integrated circuit packages (28), each including electrical interconnects (97), a die (70), and the substrate (24) for dissipating heat away from the die (70) during operation.

Abstract: A method is disclosed for controlling warpage in an integrated electronic panel assembly including a plurality of die embedded within an encapsulant. The method comprises determining a number of build-up layers required for the integrated panel assembly. Each build-up layer contributes an amount of concavity to the integrated electronic panel assembly. A level of global convex warpage on the integrated panel assembly is then predicted, wherein the global convex warpage is provided by the presence of an embedded ground plane (EGP) alone within the integrated panel assembly and in the absence of any build-up layers. The embedded ground plane includes openings therein for accepting at least one die within a corresponding opening and it contributes a fixed amount of global convex warpage.

Abstract: A semiconductor device includes a semiconductor die having a plurality of contact pad sites, a plurality of contact pads, an encapsulant barrier, and an encapsulant. A plurality of contact pads is in electrical contact with a predetermined corresponding different one of the contact pad sites. An encapsulant barrier is positioned at an outer perimeter of the semiconductor die. The encapsulant barrier has a height that is as high as or greater than a highest of the plurality of contact pads. The encapsulant barrier is in physical contact with a same surface of the semiconductor die as the contact pad sites. An encapsulant surrounds the semiconductor die and one side of the encapsulant barrier. The encapsulant is blocked from making physical contact with any of the plurality of contact pads by the encapsulant barrier when the device is encapsulated while being supported by a temporary base support layer.

Abstract: A method of forming an embedded device build-up package (10) includes forming a first plurality of features (22) over a packaging substrate (12,16,18), wherein the first plurality of features (22) comprises a first feature and a second feature, forming at least a first crack arrest feature (28) in a first crack arrest available region (26), wherein the first crack arrest available region is between the first feature and the second feature, forming a second plurality of features (32) over the first plurality of features (22) wherein the second plurality of features includes a third feature and a fourth feature, and forming at least a second crack arrest feature (36) in a second crack arrest available region (34), wherein the second crack arrest feature (36) is between the third feature and the fourth feature, and the second crack arrest feature (36) is substantially orthogonal to the first crack arrest feature (28).

Abstract: Fine pitch contacts are achieved by using traces that extend to the contacts without requiring capture pads at the contact pads. Capture pads are desirably avoided because they have a diameter greater than the line to which they are attached. Preferably, adjacent contact pads are present in the same opening in the dielectric. The traces to the contact pads are in a line so that no widening is required where the lines make contact to the contact pads. The lines can be widened before they get to the contact pads but at the contact pads, they are substantially at the minimum width for the line. Thus, the contact pads can be at a pitch much lower than if capture pads were used.

Abstract: A multi-layer structure (102) includes a first build-up layer structure (202) configured to connect to a heat-generating module (120), a second build-up layer structure (206) configured to connect to a substrate, and a middle layer (204) provided between the first build-up layer structure and the second build-up layer structure, the middle layer including at least one semiconductor component (110) and a heat spreader (130). A first set of thermal vias (210) extend through the first build-up layer structure to the heat spreader, and a second set of thermal vias (2100 extend through the second build-up layer structure to the heat spreader, wherein at least a portion of the first set of thermal vias is in thermal contact with the heat-generating module.

Abstract: A circuit device is placed within an opening of a conductive layer which is then partially encapsulated with an encapsulant so that the active surface of the circuit device is coplanar with the conductive layer. At least a portion of the conductive layer may be used as a reference voltage plane (e.g. a ground plane). Additionally, a circuit device may be placed on a conductive layer such that an active surface of circuit device is between conductive layer and an opposite surface of circuit device. The conductive layer has at least one opening to expose the active surface of circuit device. The encapsulant may be electrically conductive or electrically non-conductive.

Abstract: A circuit device (15) is placed within an opening of a conductive layer (10) which is then partially encapsulated with an encapsulant (24) so that the active surface of the circuit device (15) is coplanar with the conductive layer (10). At least a portion of the conductive layer (10) may be used as a reference voltage plane (e.g. a ground plane). Additionally, a circuit device (115) may be placed on a conductive layer (100) such that an active surface of circuit device (115) is between conductive layer (100) and an opposite surface of circuit device (115). The conductive layer (100) has at least one opening (128) to expose the active surface of circuit device (115). The encapsulant (24, 126, 326) may be electrically conductive or electrically non-conductive.

Abstract: A method of forming an embedded device build-up package (10) includes forming a first plurality of features (22) over a packaging substrate (12,16,18), wherein the first plurality of features (22) comprises a first feature and a second feature, forming at least a first crack arrest feature (28) in a first crack arrest available region (26), wherein the first crack arrest available region is between the first feature and the second feature, forming a second plurality of features (32) over the first plurality of features (22) wherein the second plurality of features includes a third feature and a fourth feature, and forming at least a second crack arrest feature (36) in a second crack arrest available region (34), wherein the second crack arrest feature (36) is between the third feature and the fourth feature, and the second crack arrest feature (36) is substantially orthogonal to the first crack arrest feature (28).

Abstract: A multi-layer structure (102) includes a first build-up layer structure (202) configured to connect to a heat-generating module (120), a second build-up layer structure (206) configured to connect to a substrate, and a middle layer (204) provided between the first build-up layer structure and the second build-up layer structure, the middle layer including at least one semiconductor component (110) and a heat spreader (130). A first set of thermal vias (210) extend through the first build-up layer structure to the heat spreader, and a second set of thermal vias (2100 extend through the second build-up layer structure to the heat spreader, wherein at least a portion of the first set of thermal vias is in thermal contact with the heat-generating module.

Abstract: A package assembly 200 includes a semiconductor die (e.g., an RF power amplifier) 208 fixed within the cavity of a conductive leadframe 204 using a thermally and electrically-conductive adhesive material 209. The semiconductor die 209 has a first side and a second side, wherein the first side includes at least one active area, and the second side includes at least one contact region. The conductive leadframe (e.g., a copper leadframe) 204 has two planar surfaces and a cavity formed therein. The adhesive material 209 is configured to couple the semiconductor die 208 within the cavity of the conductive leadframe 204 such that the first side of the semiconductor die is substantially coplanar with the first surface of the conductive leadframe.

Abstract: A bond pad (10) has a probe region (14) and a wire bond region (12) that are substantially non-overlapping. In one embodiment, the bond pad (10) is connected to a final metal layer pad (16) and extends over an interconnect region (24). The bond pad (10) is formed from aluminum and the final metal layer pad (16) is formed from copper. Separating the probe region (14) from the wire bond region (12) prevents the final metal layer pad (16) from being damaged by probe testing, allowing for more reliable wire bonds. In another embodiment, the probe region (14) extends over a passivation layer (18). In an application requiring very fine pitch between bond pads, the probe regions (14) and wire bond regions (12) of a plurality of bond pads formed in a line may be staggered to increase the distance between the probe regions (14). In addition, forming the bond pads (10) over the interconnect region (24) reduces the size of the integrated circuit.

Abstract: A circuit device (15) is placed within an opening of a conductive layer (10) which is then partially encapsulated with an encapsulant (24) so that the active surface of the circuit device (15) is coplanar with the conductive layer (10). At least a portion of the conductive layer (10) may be used as a reference voltage plane (e.g. a ground plane). Additionally, a circuit device (115) may be placed on a conductive layer (100) such that an active surface of circuit device (115) is between conductive layer (100) and an opposite surface of circuit device (115). The conductive layer (100) has at least one opening (128) to expose the active surface of circuit device (115). The encapsulant (24, 126,326) may be electrically conductive or electrically non-conductive.

Abstract: A bond pad (10) has a probe region (14) and a wire bond region (12) that are substantially non-overlapping. In one embodiment, the bond pad (10) is connected to a final metal layer pad (16) and extends over an interconnect region (24). The bond pad (10) is formed from aluminum and the final metal layer pad (16) is formed from copper. Separating the probe region (14) from the wire bond region (12) prevents the final metal layer pad (16) from being damaged by probe testing, allowing for more reliable wire bonds. In an application requiring very fine pitch between bond pads, the probe regions (14) and active regions (12) of a plurality of bond pads formed in a line may be staggered to increase the distance between the probe regions (14). In addition, forming the bond pads (10) over the interconnect region (24) reduces the size of the integrated circuit.

Abstract: In one embodiment, circuit device (15) is placed within an opening of a conductive layer (10) which is then partially encapsulated with an encapsulant (24) so that the active surface of the circuit device (15) is coplanar with the conductive layer (10). In this embodiment, at least a portion of the conductive layer (10) may be used as a reference voltage plane (e.g. a ground plane). In one embodiment, circuit device (115) is placed on a conductive layer (100) such that an active surface of circuit device (115) is between conductive layer (100) and an opposite surface of circuit device (115). In this embodiment, conductive layer (100) has at least one opening (128) to expose the active surface of circuit device (115). The encapsulant (24, 126, 326) may be electrically conductive for some embodiments, and electrically non-conductive for other embodiments.

Abstract: In one embodiment, circuit device (15) is placed within an opening of a conductive layer (10) which is then partially encapsulated with an encapsulant (24) so that the active surface of the circuit device (15) is coplanar with the conductive layer (10). In this embodiment, at least a portion of the conductive layer (10) may be used as a reference voltage plane (e.g. a ground plane). In one embodiment, circuit device (115) is placed on a conductive layer (100) such that an active surface of circuit device (115) is between conductive layer (100) and an opposite surface of circuit device (115). In this embodiment, conductive layer (100) has at least one opening (128) to expose the active surface of circuit device (115). The encapsulant (24, 126, 326) may be electrically conductive for some embodiments, and electrically non-conductive for other embodiments.