Abstract: Narrow and wide, planar field isolation region (72, 74, 152, 172, 182) is formed by forming trenches (52, 54) within a substrate (10). For wide, planar field isolation regions (72, 152, 172, 182), the trenches (52) define at least one mesa (76, 150, 170, 180) within the field isolation region (72, 152, 172, 182). The trenches (52, 54) are filled with a material (62) that is polished or etched to form the planar field isolation region (72, 74, 152, 172, 182) where the wide, planar field isolation regions (72, 152, 172, 182) include the mesa(s) (76, 150, 170, 180). Etching can be used or by polishing with minimal, if any, dishing occurs because the widths of the trenches (52, 54) are kept relatively narrow (usually no more than five microns wide). Mesas (180) within a wide, planar field isolation region (182) can form linguistic characters to better identify the part number or mask set of the device.

Abstract: Narrow and wide, planar field isolation region (72, 74, 152, 172, 182) is formed by forming trenches (52, 54) within a substrate (10). For wide, planar field isolation regions (72, 152, 172, 182), the trenches (52) define at least one mesa (76, 150, 170, 180) within the field isolation region (72, 152, 172, 182). The trenches (52, 54) are filled with a material (62) that is polished or etched to form the planar field isolation region (72, 74, 152, 172, 182) where the wide, planar field isolation regions (72, 152, 172, 182) include the mesa(s) (76, 150, 170, 180). Etching can be used or by polishing with minimal, if any, dishing occurs because the widths of the trenches (52, 54) are kept relatively narrow (usually no more than five microns wide). Mesas (180) within a wide, planar field isolation region (182) can form linguistic characters to better identify the part number or mask set of the device.

Abstract: Physical properties of alumina particles in a chemical-mechanical polishing slurry delivery loop (28) are measured using a titration technique (44). Examples of the physical properties include crystallographic phase, surface charge, and surface charge density. The physical properties are correlated to a polishing rate (46). Specification limits are generated using the correlated data (482 and 486). The specification limits are used to determine if no adjustments are required to the polishing parameters (484), if adjustments are required to polishing parameters (488) or if the slurry requires replacement (489). This process can be automated and integrated into a conventional chemical-mechanical polishing processing system (20).

Abstract: Narrow and wide, planar field isolation region (72, 74, 152, 172, 182) is formed by forming trenches (52, 54) within a substrate (10). For wide, planar field isolation regions (72, 152, 172, 182), the trenches (52) define at least one mesa (76, 150, 170, 180) within the field isolation region (72, 152, 172, 182). The trenches (52, 54) are filled with a material (62) that is polished or etched to form the planar field isolation region (72, 74, 152, 172, 182) where the wide, planar field isolation regions (72, 152, 172, 182) include the mesa(s) (76, 150, 170, 180). Etching can be used or by polishing with minimal, if any, dishing occurs because the widths of the trenches (52, 54) are kept relatively narrow (usually no more than five microns wide). Mesas (180) within a wide, planar field isolation region (182) can form linguistic characters to better identify the part number or mask set of the device.

Abstract: A method of forming a chlorinated silicon nitride barrier layer is disclosed. The method of the present invention includes depositing a silicon nitride layer over a semiconductor substrate. The silicon nitride layer is exposed to an ambient including chlorine at an elevated temperature for a predetermined time to form the chlorinated silicon nitride barrier layer that is resistant to attack by at least one reactive compound.

Abstract: Rust of ferrous metal surfaces that are in contact with gasohol or alcohol fuels is inhibited by the addition of a corrosion inhibiting amount of the combination of (A) a substituted imidazoline and (B) an alkenyl succinimide of a mixture of alkylenepolyamines.

Abstract: Detergents for hydrocarbon fuels, and hydrocarbon fuels containing detergents are provided wherein the detergent is comprised of an alkenylsuccinimide prepared by reacting an alkenylsuccinic acid or anhydride with a mixture of amines. The alkenyl substituent is substantially derived from an olefin having a carbon chain of from 8 to 10 carbons or mixtures thereof.

Abstract: A corrosion inhibitor composition for hydrocarbon fuels comprising a C.sub.10 -C.sub.24 alkenyl succinic anhydride esterified with between 0.5-1.5 moles of a water-soluble glycol and then neutralized with an amine.The invention also contemplates improved hydrocarbon fuels which comprise a major portion of such fuels which contain small quantities of the above described composition.

Abstract: Detergents for hydrocarbon fuels, and hydrocarbon fuels containing detergents are provided wherein the detergent is comprised of an alkenylsuccinimide prepared by reacting an alkenylsuccinic acid or anhydride with a mixture of amines. The alkenyl substituent is substantially derived from an olefin having a carbon chain or from 8 to 10 carbons or mixtures thereof.