Patents by Inventor George Radominski

George Radominski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030202264
    Abstract: A micro-mirror device includes a substrate having a surface and a plate spaced from and oriented substantially parallel to the surface of the substrate such that the plate and the surface of the substrate define a cavity therebetween. A dielectric liquid is disposed in the cavity and a reflective element is interposed between the surface of the substrate and the plate. As such, the reflective element is adapted to move between a first position and at least one second position.
    Type: Application
    Filed: April 30, 2002
    Publication date: October 30, 2003
    Inventors: Timothy L. Weber, George Radominski, Norman L. Johnson, Terry E. McMahon, Donald W. Schulte, Jeremy H. Donaldson, Leonard A. Rosi, Sadiq S. Bengali
  • Patent number: 6475402
    Abstract: An ink-jet printhead fabrication process and product that uses selectivity rate controlled etch techniques to produce trenches on the frontside of a silicon substrate to define ink feed channels and resistor support regions. Location and size of features is made independent of etch rate by providing a selective etch for the silicon trench etch steps that is greater than 10,000:1 for the silicon:oxide that defines ink feed channels and resistor support areas.
    Type: Grant
    Filed: March 2, 2001
    Date of Patent: November 5, 2002
    Assignee: Hewlett-Packard Company
    Inventors: Terry V. Nordstrom, Timothy R. Emery, Sadiq Bengali, Victorio A. Chavarria, Michael G. Monroe, George Radominski
  • Publication number: 20020122100
    Abstract: An ink-jet printhead fabrication process and product that uses selectivity rate controlled etch techniques to produce trenches on the frontside of a silicon substrate to define ink feed channels and resistor support regions. Location and size of features is made independent of etch rate by providing a selective etch for the silicon trench etch steps that is greater than 10,000:1 for the silicon:oxide that defines ink feed channels and resistor support areas.
    Type: Application
    Filed: March 2, 2001
    Publication date: September 5, 2002
    Inventors: Terry V. Nordstrom, Timothy R. Emery, Sadiq Bengali, Victorio A. Chavarria, Michael G. Monroe, George Radominski