Abstract: Thermoelectric elements may be used for heat sensors, heat pumps, and thermoelectric generators. A quantum-dot or nano-scale grain size polycrystalline material the effects of size-quantization are present inside the nanocrystals. A thermoelectric element composed of densified Groups IV-VI material, such as calcogenide-based materials are doped with metal or chalcogenide to form interference barriers form along grains. The dopant used is either silver or sodium. These chalcogenide materials form nanoparticles of highly crystal grains, and may specifically be between 1- and 100 nm. The compound is densified by spark plasma sintering.

Abstract: A novel method for high quality crystal growth of intermetallic clathrates is presented. The synthesis of high quality pure phase crystals has been complicated by the simultaneous formation of both clathrate type-I and clathrate type-II structures. It was found that selective, phase pure, single-crystal growth of type-I and type-II clathrates can be achieved by maintaining sufficient partial pressure of a chemical constituent during slow, controlled deprivation of the chemical constituent from the primary reactant. The chemical constituent is slowly removed from the primary reactant by the reaction of the chemical constituent vapor with a secondary reactant, spatially separated from the primary reactant, in a closed volume under uniaxial pressure and heat to form the single phase pure crystals.

Abstract: The present invention comprises new materials, material structures, and processes of fabrication of such that may be used in technologies involving the conversion of light to electricity and/or heat to electricity, and in optoelectronics technologies. The present invention provide for the fabrication of a clathrate compound comprising a type II clathrate lattice with atoms of silicon and germanium as a main framework forming lattice spacings within the framework, wherein the clathrate lattice follows the general formula Si136?yGey, where y indicates the number of Ge atoms present in the main framework and 136?y indicates the number of Si atoms present in the main framework, and wherein y>0.

Abstract: The present invention comprises new materials, material structures, and processes of fabrication of such that may be used in technologies involving the conversion of light to electricity and/or heat to electricity, and in optoelectronics technologies. The present invention provide for the fabrication of a clathrate compound comprising a type II clathrate lattice with atoms of silicon and germanium as a main framework forming lattice spacings within the framework, wherein the clathrate lattice follows the general formula Si136-yGey, where y indicates the number of Ge atoms present in the main framework and 136-y indicates the number of Si atoms present in the main framework, and wherein y>0.

Abstract: The present invention comprises new materials, material structures, and processes of fabrication of such that may be used in technologies involving the conversion of light to electricity and/or heat to electricity, and in optoelectronics technologies. The present invention provide for the fabrication of a clathrate compound comprising a type II clathrate lattice with atoms of silicon and germanium as a main framework forming lattice spacings within the framework, wherein the clathrate lattice follows the general formula Si136-yGey, where y indicates the number of Ge atoms present in the main framework and 136-y indicates the number of Si atoms present in the main framework, and wherein y>0.

Abstract: The present invention comprises new materials, material structures, and processes of fabrication of such that may be used in technologies involving the conversion of light to electricity and/or heat to electricity, and in optoelectronics technologies. The present invention provide for the fabrication of a clathrate compound comprising a type II clathrate lattice with atoms of silicon and germanium as a main framework forming lattice spacings within the framework, wherein the clathrate lattice follows the general formula Si136-yGey, where y indicates the number of Ge atoms present in the main framework and 136-y indicates the number of Si atoms present in the main framework, and wherein y>0.

Abstract: The present invention allows optimum filling of void spaces typically found in skutterudite type crystal lattice structures associated with various semiconductor materials. Selective filling provides semiconductor materials which are particularly beneficial for use in fabricating thermoelectric devices for electrical power generation and/or cooling applications. By selectively filling a portion of the void spaces associated with skutterudite type crystal lattice structure, reductions in thermal conductivity of the resulting semiconducting material may be optimized while concurrently minimizing any reduction in electrical properties of the resulting semiconductor materials, thus maximizing the thermoelectric figure of merit for the associated thermoelectric device.

Abstract: The present invention allows optimum filling of void spaces typically found in skutterudite type crystal lattice structures associated with various semiconductor materials. Selective filling of such void spaces in the associated lattice structure provides semiconductor materials which are particularly beneficial for use in fabricating thermoelectric devices for electrical power generation and/or cooling applications. By selectively filling a portion of the void spaces associated with skutterudite type crystal lattice structure, reductions in thermal conductivity of the resulting semiconducting material may be optimized while at the same time minimizing any reduction in electrical properties of the resulting semiconductor materials, which results in maximizing the thermoelectric figure of merit for the associated thermoelectric device.

Abstract: The present invention allows optimum filling of cavities or cages typically found in crystal lattice type structures associated with an inclusion complex such as formed by clathrate compounds. Filling such cavities or cages in the associated crystal lattice type structure provides semiconductor materials which are particularly beneficial for use in fabricating thermoelectric devices for electrical power generation and/or cooling applications. By filling the cavities or cages associated with clathrate compounds with selected metal and/or semi-metal atoms, reductions in thermal conductivity may be optimized while at the same time minimizing any reduction in electrical properties of the resulting semiconductor materials. As a result, the thermoelectric Figure of Merit for a thermoelectric device fabricated from such clathrate compounds is maximized.