Abstract: An improved method is presented for the deposition of dielectric films in the fabrication of integrated circuits (ICs), wherein a solution of polymers derived from cyclosilazanes is employed to deposit dielectric films on semiconductor substrates by the spin-on technique. These spin-on films planarize (smooth out) underlying substrate topography and therefore are especially advantageous in multilevel metallization processes where they allow a highly uniform and continuous deposition of a subsequent layer of metallization resulting in improved yield and reliability of ICs.

Abstract: A polymeric borazole is produced by reacting BCl.sub.3 and an amine at temperatures between -60.degree. C. and -5.degree. C. in an inert solvent to form an intermediate triaminoborane, and then further polymerizing the intermediate after removal of the amine hydrochloride salt via thermal condensation at a temperature in the range of 380.degree. C. to 420.degree. C. This polymer, in the form of a glassy resin, and other borazole polymers derived by the polymerization of monomers of the formula(XBNY).sub.3wherein X and Y are used to designate the indicated position of H, OH, OR halogen, amino and R, substituents on the polymer and wherein R is selected from the group consisting of alkyl radicals of 1-4C atoms, cyclohexyl, phenyl and methyl and ethyl substituted phenyl radicals is dissolved in toluene or xylene at the 1 to 20% (wt/wt) level.