Patents by Inventor George Tkach

George Tkach has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Control of the deposition temperature to reduce the via and contact resistance of Ti and TiN deposited using ionized PVD techniques
    Patent number: 6673716
    Abstract: A method of depositing thin films comprising Ti and TiN within vias and trenches having high aspect ratio openings. The Ti and TiN layers are formed on an integrated circuit substrate using a Ti target in a non-nitrided mode in a hollow cathode magnetron apparatus in combination with controlling the deposition temperatures by integrating cooling steps into the Ti/TiN deposition processes to modulate the via and contact resistance. The Ti and TiN layers are deposited within a single deposition chamber, without the use of a collimator or a shutter.
    Type: Grant
    Filed: January 30, 2002
    Date of Patent: January 6, 2004
    Assignee: Novellus Systems, Inc.
    Inventors: Gerard C. D'Couto, George Tkach, Michael Woitge, Michal Danek
  • Use of RF biased ESC to influence the film properties of Ti and TiN
    Patent number: 6652718
    Abstract: A method of depositing thin films comprising Ti and TiN within vias and trenches having high aspect ratio openings of 6:1 is disclosed. The Ti and TiN layers are formed on an integrated circuit substrate using a Ti target in a non-nitrided mode in a hollow cathode magnetron apparatus in combination with an RF biased electrostatic chuck to modulate the properties of the deposited Ti and TiN layers in the same chamber, without the use of a collimator or a shutter. The resulting Ti and TiN layers are superior in step coverage, grain size, grain orientation, roughness and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.
    Type: Grant
    Filed: January 30, 2002
    Date of Patent: November 25, 2003
    Assignee: Novellus Systems, Inc.
    Inventors: Gerard C. D'Couto, George Tkach, Michal Danek
  • PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter
    Patent number: 6342133
    Abstract: Ti and TiN layers are formed on an integrated circuit substrate using a titanium target in non-nitrided mode in a hollow cathode magnetron apparatus. Neither a collimator nor a shield is used. Ti and TiN layers are deposited in vias and trenches having aspect ratios up to 5:1.
    Type: Grant
    Filed: March 14, 2000
    Date of Patent: January 29, 2002
  • PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter
    Publication number: 20010030125
    Abstract: Ti and TiN layers are formed on an integrated circuit substrate using a titanium target in non-nitrided mode in a hollow cathode magnetron apparatus. Neither a collimator nor a shield is used. Ti and TiN layers are deposited in vias and trenches having aspect ratios up to 5:1.
    Type: Application
    Filed: March 14, 2000
    Publication date: October 18, 2001