Abstract: A codeset is described in a Public Codeset Communication Format (PCCF) as a format block including a plurality of fields having readily decipherable values, such as ASCII character values. One field is a mark/space information field that includes a sequence of mark time indicators and space time indicators for an operational signal of the codeset. A second field is a signal characteristic information field for the operational signal. Signal characteristic information may include carrier on/off information, repeat frame information, toggle control information, and last frame information. The PCCF is a codeset interchange format of general applicability.

Abstract: A method and apparatus to detect, initialize and isolate a non-operating memory module in a system without physically removing the memory module from the system is provided. The memory module includes a power management integrated circuit to provide power to a memory integrated circuit on the memory module. During initialization of the memory module, if an error log stored in a non-volatile memory in the memory module indicates a fatal error condition from a prior power cycle, the memory module is electrically isolated.

Abstract: In one embodiment, a host controller includes: a first input/output (I/O) buffer to couple to a first communication line of an interconnect; a second I/O buffer to couple to a second communication line of the interconnect; and a device group selection circuit to dynamically cause the first communication line to communicate a clock signal to a first device group including one or more first devices to couple to the interconnect and dynamically cause the second communication line to communicate a data signal to the first device group when a communication is to be addressed to at least one of the one or more first devices of the first device group, such that the communication is transparent to at least another device group to couple to the interconnect. Other embodiments are described and claimed.

Abstract: Techniques to couple a high bandwidth memory device on a silicon substrate and a package substrate are disclosed. Examples include selectively activating input/out (I/O) or command and address (CA) contacts on a bottom side of a logic layer for the high bandwidth device based on a mode of operation. The I/O and CA contacts are for accessing one or more memory devices include in the high bandwidth memory device via one or more data channels.

Abstract: A codeset having function-code combinations is provisioned on a controlling device to control functions of an intended target device. Input is provided to the controlling device which designates a function to be controlled on the intended target device. From a plurality of codes that are each associated with the designated function in a database stored in a memory of the controlling device a first code that is determined to be valid for use in controlling the designated function on the intended target device is selected. When the codeset is then provisioned on the controlling device, the provisioned codeset includes as a function-code combination thereof the designated function and the first code.

Abstract: A storage circuit includes a buffer coupled between the storage controller and the nonvolatile memory devices. The circuit includes one or more groups of nonvolatile memory (NVM) devices, a storage controller to control access to the NVM device, and the buffer. The buffer is coupled between the storage controller and the NVM devices. The buffer is to re-drive signals on a bus between the NVM devices and the storage controller, including synchronizing the signals to a clock signal for the signals. The circuit can include a data buffer, a command buffer, or both.

Abstract: A codeset having function-code combinations is provisioned on a controlling device to control functions of an intended target device. Input is provided to the controlling device which designates a function to be controlled on the intended target device. From a plurality of codes that are each associated with the designated function in a database stored in a memory of the controlling device a first code that is determined to be valid for use in controlling the designated function on the intended target device is selected. When the codeset is then provisioned on the controlling device, the provisioned codeset includes as a function-code combination thereof the designated function and the first code.

Abstract: Techniques to couple a high bandwidth memory device on a silicon substrate and a package substrate are disclosed. Examples include selectively activating input/out (I/O) or command and address (CA) contacts on a bottom side of a logic layer for the high bandwidth device based on a mode of operation. The I/O and CA contacts are for accessing one or more memory devices include in the high bandwidth memory device via one or more data channels.

Abstract: A standalone top cover retention mechanism can attach to the top of an array of tall (e.g., 2U) DIMMs to provide structural support. In one example, the DIMM cover is attached to two or more DIMMs without attaching to the chassis. The DIMM cover can mitigate shock and vibration related failures at the DIMM level without significant interference with platform thermal mechanical solutions.

Abstract: A codeset is described in a Public Codeset Communication Format (PCCF) as a format block including a plurality of fields having readily decipherable values, such as ASCII character values. One field is a mark/space information field that includes a sequence of mark time indicators and space time indicators for an operational signal of the codeset. A second field is a signal characteristic information field for the operational signal. Signal characteristic information may include carrier on/off information, repeat frame information, toggle control information, and last frame information. The PCCF is a codeset interchange format of general applicability.

Abstract: A memory module management controller in a memory module includes a reset controller that monitors a reset signal received from a host memory controller in the host system that is communicatively coupled to the memory module. The memory module management controller includes sideband bus control circuitry. The memory module also includes memory integrated circuits (for example, Dynamic Random Access Memory (DRAM)) and a Registering Clock Driver (RCD). The reset signal from the host memory controller can be time multiplexed, a short duration pulse to indicate reset of the sideband bus control circuitry and a long duration pulse to indicate reset of other components in the memory module, for example, memory integrated circuits and/or Registering Clock Driver (RCD).

Abstract: A codeset is described in a Public Codeset Communication Format (PCCF) as a format block including a plurality of fields having readily decipherable values, such as ASCII character values. One field is a mark/space information field that includes a sequence of mark time indicators and space time indicators for an operational signal of the codeset. A second field is a signal characteristic information field for the operational signal. Signal characteristic information may include carrier on/off information, repeat frame information, toggle control information, and last frame information. The PCCF is a codeset interchange format of general applicability.

Abstract: A codeset having function-code combinations is provisioned on a controlling device to control functions of an intended target device. Input is provided to the controlling device which designates a function to be controlled on the intended target device. From a plurality of codes that are each associated with the designated function in a database stored in a memory of the controlling device a first code that is determined to be valid for use in controlling the designated function on the intended target device is selected. When the codeset is then provisioned on the controlling device, the provisioned codeset includes as a function-code combination thereof the designated function and the first code.

Abstract: Techniques to couple a high bandwidth memory device on a silicon substrate and a package substrate are disclosed. Examples include selectively activating input/out (I/O) or command and address (CA) contacts on a bottom side of a logic layer for the high bandwidth device based on a mode of operation. The I/O and CA contacts are for accessing one or more memory devices include in the high bandwidth memory device via one or more data channels.

Abstract: An apparatus is described. The apparatus includes data buffer to memory chip write training circuitry. The data buffer to memory chip write training circuitry to send MDQ/MDQS phase relationship programming information, write commands and read commands to the data buffer chips for multiple write training iterations without a host memory controller having provided the MDQ/MDQS phase relationship programming information, the write commands and the read commands to the data buffer to memory chip write training circuitry.

Abstract: An apparatus is described. The apparatus includes a data buffer chip having write leveling training circuitry. The write leveling training circuitry to detect when a sampled value of a WL pulse within a memory chip has changed. Another apparatus is described. The other apparatus includes a registering clock driver (RCD) chip having write leveling training circuitry to determine when to send a write command to a memory chip and a data buffer chip during an external write leveling training process for the memory chip.

Abstract: A storage circuit includes a buffer coupled between the storage controller and the nonvolatile memory devices. The circuit includes one or more groups of nonvolatile memory (NVM) devices, a storage controller to control access to the NVM device, and the buffer. The buffer is coupled between the storage controller and the NVM devices. The buffer is to re-drive signals on a bus between the NVM devices and the storage controller, including synchronizing the signals to a clock signal for the signals. The circuit can include a data buffer, a command buffer, or both.

Abstract: A memory module management device and associated apparatus and methods. The device integrates multiple blocks and components on a substrate, including a host input/output (I/O) interface coupled to a host-side port, a power management component, and a device-side I/O interface and router coupled to a plurality of device-side I/O ports. The device is configured to be mounted on a memory module having a plurality of Dynamic Random Access Memory (DRAM) devices that are coupled to the device-side I/O ports and execute firmware instructions on a processing element to facilitate communication between a host in which the memory module is installed and the plurality of DRAM devices using sideband communication. Sideband communication between the host and data buffers and thermal sensors on the memory module are also supported. The device also may be configured to provide scratchpad memory and/or a mailbox. Authentication of the firmware instructions is also supported.

Abstract: An apparatus is described. The apparatus includes a DIMM cooling assembly. The DIMM cooling assembly includes first and second heat spreaders to be respectively disposed on first and second sides of the DIMM's circuit board. The first and second sides having respective memory chips. The DIMM cooling assembly includes a heat dissipative structure. The DIMM's circuit board is to be disposed between the heat dissipative structure and a printed circuit board that the DIMM is to be plugged into. The DIMM cooling assembly includes fixturing elements to apply compressive forces toward the respective side edges of the DIMM's circuit board to the heat spreaders.

Abstract: A memory module has a registering clock driver (RCD) that issues two column address strobe (CAS) commands with a single memory access command to exchange a double amount of data per dynamic random access memory (DRAM) device per memory access command. With double the amount of data per DRAM device, the memory module can provide double the pseudo channels as compared to a memory module where a single CAS command is issued per access command. The RCD can time division multiplex separate first commands for a first group of the DRAM devices from second commands for a second group of the DRAM devices on the command/address (CA) bus.