Patents by Inventor GEORGE VOLONAKIS

GEORGE VOLONAKIS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DOUBLE PEROVSKITE
    Publication number: 20240043282
    Abstract: The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI]; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI] selected from Cu+, Ag+ and Au+; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X].
    Type: Application
    Filed: August 3, 2023
    Publication date: February 8, 2024
    Inventors: HENRY JAMES SNAITH, AMIR ABBAS HAGIGHIRAD, FELICIANO GIUSTINO, MARINA FILIP, GEORGE VOLONAKIS
  • Double perovskite
    Patent number: 11820670
    Abstract: The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI]; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI] selected from Cu+, Ag+ and Au+; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X].
    Type: Grant
    Filed: February 4, 2021
    Date of Patent: November 21, 2023
    Assignee: OXFORD UNIVERSITY INNOVATION LIMITED
    Inventors: Henry James Snaith, Amir Abbas Hagighirad, Feliciano Giustino, Marina Filip, George Volonakis
  • DOUBLE PEROVSKITE
    Publication number: 20210230014
    Abstract: The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI]; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI] selected from Cu+, Ag+ and Au+; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X].
    Type: Application
    Filed: February 4, 2021
    Publication date: July 29, 2021
    Inventors: HENRY JAMES SNAITH, AMIR ABBAS HAGIGHIRAD, FELICIANO GIUSTINO, MARINA FILIP, GEORGE VOLONAKIS
  • Double perovskite
    Patent number: 10927013
    Abstract: The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI]; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI] selected from Cu+, Ag+ and Au+; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X].
    Type: Grant
    Filed: August 31, 2016
    Date of Patent: February 23, 2021
    Assignee: OXFORD UNIVERSITY INNOVATION LIMITED
    Inventors: Henry James Snaith, Amir Abbas Hagighirad, Feliciano Giustino, Marina Filip, George Volonakis
  • DOUBLE PEROVSKITE
    Publication number: 20180290897
    Abstract: The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI]; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI] selected from Cu+, Ag+ and Au+; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X].
    Type: Application
    Filed: August 31, 2016
    Publication date: October 11, 2018
    Inventors: HENRY JAMES SNAITH, AMIR ABBAS HAGIGHIRAD, FELICIANO GIUSTINO, MARINA FILIP, GEORGE VOLONAKIS