Abstract: A system and method for providing call management services in a Virtual Private Network of the present invention uses the advantages of end-to-end Internet Protocol signaling. The system and method of the present invention includes a user profile which offers both a customer address and a user name as search keys. The method includes locating the called party who may be at a multiplicity of possible physical locations, evaluating the calling and called party privileges, routing preferences and busy/idle status for establishing permission to set up the call, determining an optimum route to establish the telephone call. Due to the system and method of the present invention, the telephone call takes the optimum route and preferably the most direct route to the destination with a high probability of completion.

Abstract: A system and method for providing a private telephone network using Voice over Internet Protocol includes an addressing scheme that supports two levels of numbers, an Internet name that identifies individual users and a Directory number, which allow the network supported by a plurality of switches to function as if the multiple customers are being served by a single switch. The system of the present invention includes a gateway in communication with both a Public Switch Telephone Network and users of the private network; a call agent in communication with the gateway for processing different requests received at the gateway; a server-based interface including a Directory Server for translating between the Internet name (Network Address) and a Customer address and a Domain Name Server for translating between the Internet name (Network Address) and an Internet Protocol Address.

Abstract: A method is disclosed which brings together a combination of special IN features and techniques to allow Centrex stations supported by a plurality of central office switching systems, each at different locations, to function from the customer's perspective as though they were served by a single central office switch. The key to Virtual Wide Area Centrex is a total separation of the telephone numbers seen and used by customers (Customer Number Address--CNA) from the telephone numbers used internally by the network for call routing purposes (Network Node Address--NNA), such that there are two separate and distinct numbering plan domains. A central database, interconnected with each of the Centrex switches, maintains the mapping between CNA and NNA. This database is called upon, as required, to do both forward and reverse translations--i.e., from CNAs to NNA and vice-versa. The net result is that CNAs identify people (e.g., a customer's specific employees and agents) whereas NNAs identify locations (e.g.

Abstract: A method is disclosed for processing call data among telephone switching offices and a remotely located database system, called an SCP (Services Control Point), such that one large monolithic application at the SCP is shared among a very large number of individual services.

Abstract: A video tracking system and a program employing frequency-domain analysis for extracting RHEED intensity oscillation data for film growth on rotating substrates. In initial experiments on GaAs growth, excellent (2%) agreement has been obtained between oscillation frequencies measured for static substrates and substrates with rotation rates as high as 10 rpm. The capability of performing RHEED analysis on rotating substrates could lead to improvements in the quality of complex epitaxial structures and interfaces for which interrupting rotation can have a deleterious effect.

Abstract: Computerized acquisition and frequency-domain analysis of dynamic reflection high-energy electron diffraction (RHEED) intensity data is obtained during growth by molecular-beam epitaxy (MBE). Rapid, accurate determination of the frequency of RHEED oscillations can be obtained not only when these oscillations are well resolved, but also when the growth conditions yield oscillations that are too poorly resolved to permit frequency analysis by conventional procedures. The method has been used to study transients in the growth of AlGaAs on GaAs substrates and also to investigate the hetero-epitaxial growth of GaAs on Si.

Abstract: Monolithic integration of Si MOSFETs and gallium arsenide MESFETs on a silicon substrate is described herein. Except for contact openings and final metallization, the Si MOSFETs are first fabricated on selected areas of a silicon wafer. CVD or sputtering is employed to cover the wafer with successive layers of SiO.sub.2 and Si.sub.3 N.sub.4 to protect the MOSFET structure during gallium arsenide epitaxy and subsequent MESFET processing. Gallium arsenide layers are then grown by MBE or MOCVD or VPE over the entire wafer. The gallium arsenide grown on the bare silicon is single crystal material while that on the nitride is polycrystalline. The polycrystalline gallium arsenide is etched away and MESFETs are fabricated in the single crystal regions by conventional processes. Next, the contact openings for the Si MOSFETs are etched through the Si.sub.3 N.sub.4 /SiO.sub.2 layers and final metallization is performed to complete the MOSFET fabrication.

Abstract: A method of compensating grain boundaries or dislocations causing interstices to form particularly in polycrystalline semiconductor materials is disclosed which comprises selectively diffusing opposite impurity-type donor semiconductor material into the interstice to thereby reduce the conductivity of the interstice.