Abstract: A plasma deposition apparatus includes a vacuum chamber, and a workpiece assembly that includes a frame that can hold a plurality of workpieces, and gas channels formed in between the workpieces and the frames. The gas channels can transport gas from a gas source to the plurality of workpieces to produce material deposition on the workpieces. The workpiece assembly can form a cylinder in the vacuum chamber.

Abstract: A plasma deposition apparatus includes a first plasma source that can produce a first plasma confined in a magnetic field, which includes: a gas distribution device configured to supply a gas, a closed-loop electrode defining a center region therein and a central axis through the central region and one or more magnets that are outside an inner surface of the closed-loop electrode. The one or more magnets can produce the magnetic field in the center region. The closed-loop electrode and the one or more magnets can produce the first plasma of activated atoms, molecules, electrons, and ions from the gas. A collimator can collimate the activated atoms, molecules, electrons, and ions produced by the first plasma source and direct the ions to a substrate.

Abstract: A plasma deposition apparatus includes a first plasma source that can produce a plasma confined in a magnetic field. The first plasma source includes a closed-loop electrode defining a center region therein and a central axis through the central region, and one or more magnets that are outside an inner surface of the closed-loop electrode. The magnets can produce a magnetic field in the center region. The one or more magnets can be at least partially embedded in the closed-loop electrode. The closed-loop electrode and the magnets can produce a plasma of ions to sputter atoms off a sputtering target or a backing plate.

Abstract: A controlled nuclear fusion system includes a vacuum chamber, an electrode cage shaped in a first closed-loop tube in the vacuum chamber, wherein the electrode cage comprises electrically conductive wires configured to confine ions and electrons in the electrode cage and a toroidal electromagnetic coil coiled around outside of the electrode cage and configured to produce a closed-loop magnetic flux in the electrode cage.

Abstract: A versatile high throughput deposition apparatus includes a process chamber and a workpiece platform in the process chamber. The workpiece platform can hold a plurality of workpieces around a center region and to rotate the plurality of workpieces around the center region. Each of the plurality of workpieces includes a deposition surface facing the center region. A gas distribution system can distribute a vapor gas in the center region of the process chamber to deposit a material on the deposition surfaces on the plurality of workpieces. A magnetron apparatus can form a closed-loop magnetic field near the plurality of workpieces. The plurality of workpieces can be electrically biased to produce a plasma near the deposition surfaces on the plurality of workpieces.

Abstract: A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.

Abstract: An Inverted Cylindrical Magnetron (ICM) System and Methods of Use is disclosed herein generally comprising a co-axial central anode concentrically located within a first annular end anode and a second annular end anode; a process chamber including a top end and a bottom end in which the first annular end anode and the second annular end anode are coaxially disposed, whereby the first annular end anode, the second annular end anode, and the central anode form a 3-anode configuration to provide electric field uniformity, and the process chamber including a central annular space coupled to a tube insulator disposed about the central annular space wall; a cathode concentrically coupled to the tube insulator and a target; and a plurality of multi-zone electromagnets or hybrid electro-permanent magnets surrounding the exterior of the process chamber providing a tunable magnetic field.

Abstract: A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.

Abstract: An Inverted Cylindrical Magnetron (ICM) System and Methods of Use is disclosed herein generally comprising a co-axial central anode concentrically located within a first annular end anode and a second annular end anode; a process chamber including a top end and a bottom end in which the first annular end anode and the second annular end anode are coaxially disposed, whereby the first annular end anode, the second annular end anode, and the central anode form a 3-anode configuration to provide electric field uniformity, and the process chamber including a central annular space coupled to a tube insulator disposed about the central annular space wall; a cathode concentrically coupled to the tube insulator and a target; and a plurality of multi-zone electromagnets or hybrid electro-permanent magnets surrounding the exterior of the process chamber providing a tunable magnetic field.

Abstract: A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.

Abstract: The present invention provides a system of processing one or more substrates with very high efficiency. The processing system in descriptions comprises a first process chamber with various features to improve efficiency and a transfer chamber that couples to the first process chamber with various features to improve efficiency. In addition, a second process chamber and load-locks may be used to improve efficiency furthermore. This system can increases number of the substrates in processing chamber, enable multiple processes and process sequences to be carried out in the same system, and provide high throughput substrate processing.

Abstract: A high throughput deposition apparatus includes a vacuum chamber comprising a first processing chamber, a plurality of elongated deposition sources in parallel in the first processing chamber, wherein each of the elongated deposition sources can include a gas distribution channel that provides a deposition material in a gas form, and an electrode configured to generate a plasma in the deposition material, and a web transport mechanism configured to move a plurality of workpiece webs passing by the elongated deposition sources in the first processing chamber. The plurality of workpiece webs are parallel to each other and are configured to receive the deposition material in the first process chamber.

Abstract: The present invention describe a substrate handling system that exerts no or controllable external forces to hold substrates, does not contact front or back of the substrates, has minimum contact with side edge area of the substrate, can hold one or two substrate to each position, can be positioned in any orientation, and can be easily handled by human or robots. In the case that no deposition materials is desirable on the edge or sides of substrate, a self-aligned mask that can be attached to the substrate carrier is presented.

Abstract: A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.

Abstract: An Inverted Cylindrical Magnetron (ICM) System and Methods of Use is disclosed herein generally comprising a co-axial central anode concentrically located within a first annular end anode and a second annular end anode; a process chamber including a top end and a bottom end in which the first annular end anode and the second annular end anode are coaxially disposed, whereby the first annular end anode, the second annular end anode, and the central anode form a 3-anode configuration to provide electric field uniformity, and the process chamber including a central annular space coupled to a tube insulator disposed about the central annular space wall; a cathode concentrically coupled to the tube insulator and a target; and a plurality of multi-zone electromagnets or hybrid electro-permanent magnets surrounding the exterior of the process chamber providing a tunable magnetic field.

Abstract: The present application discloses a new type of deposition source, where individual sources are placed in a substantial closed loop. The closed polygon deposition sources have no end in circumference and enable better deposition uniformity. A closed loop deposition sources minimize the edge effects in sputtering, chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD) and increase deposition material utilization.

Abstract: The present invention describe a substrate handling system that exerts no or controllable external forces to hold substrates, does not contact front or back of the substrates, has minimum contact with side edge area of the substrate, can hold one or two substrate to each position, can be positioned in any orientation, and can be easily handled by human or robots. In the case that no deposition materials is desirable on the edge or sides of substrate, a self-aligned mask that can be attached to the substrate carrier is presented.

Abstract: An Inverted Cylindrical Magnetron (ICM) System and Methods of Use is disclosed herein generally comprising a co-axial central anode concentrically located within a first annular end anode and a second annular end anode; a process chamber including a top end and a bottom end in which the first annular end anode and the second annular end anode are coaxially disposed, whereby the first annular end anode, the second annular end anode, and the central anode form a 3-anode configuration to provide electric field uniformity, and the process chamber including a central annular space coupled to a tube insulator disposed about the central annular space wall; a cathode concentrically coupled to the tube insulator and a target; and a plurality of multi-zone electromagnets or hybrid electro-permanent magnets surrounding the exterior of the process chamber providing a tunable magnetic field.

Abstract: An Inverted Cylindrical Magnetron (ICM) System and Methods of Use is disclosed herein generally comprising a co-axial central anode concentrically located within a first annular end anode and a second annular end anode; a process chamber including a top end and a bottom end in which the first annular end anode and the second annular end anode are coaxially disposed, whereby the first annular end anode, the second annular end anode, and the central anode form a 3-anode configuration to provide electric field uniformity, and the process chamber including a central annular space coupled to a tube insulator disposed about the central annular space wall; a cathode concentrically coupled to the tube insulator and a target; and a plurality of multi-zone electromagnets or hybrid electro-permanent magnets surrounding the exterior of the process chamber providing a tunable magnetic field.

Abstract: An apparatus for processing a work piece in a vacuum environment includes a master process chamber that can be exhausted to a sub-atmospheric air pressure or to be filled with a desirable gas, a transfer chamber configured to receive the work piece from outside of the master process chamber, one or more processing stations inside the master process chamber, a rotation plate configured to receive the work piece and to move the work piece to receive one or more processing operations, and a first transport mechanism configured to transfer the work piece from the transfer chamber on to the rotation plate. The transfer chamber is at least partially enclosed in the master process chamber and can be vacuum sealed off from the master process chamber.