Patents by Inventor George Zhanqi Du

George Zhanqi Du has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Rectification circuit with transistor channel and diode channel
    Patent number: 10396679
    Abstract: A rectifying circuit is provided, which includes a first channel circuit, a comparator circuit, and a second channel circuit. The first channel circuit rectifies a first input signal using a transistor that is coupled between an input of the first channel circuit and a node. The comparator circuit is coupled with the transistor and controls it based on a difference between a representative voltage of the first input signal and a representative voltage of the node. The second channel circuit rectifies a second input signal using a diode coupled between an input of the second channel circuit and the node. The transistor may be a first MOSFET and the comparator circuit may be coupled with the first MOSFET by way of a second MOSFET. The second MOSFET controls the first MOSFET and is itself controlled by the comparator circuit.
    Type: Grant
    Filed: June 7, 2018
    Date of Patent: August 27, 2019
    Assignee: OSRAM SYLVANIA Inc.
    Inventor: George Zhanqi Du
  • RECTIFICATION CIRCUIT WITH TRANSISTOR CHANNEL AND DIODE CHANNEL
    Publication number: 20180358905
    Abstract: A rectifying circuit is provided, which includes a first channel circuit, a comparator circuit, and a second channel circuit. The first channel circuit rectifies a first input signal using a transistor that is coupled between an input of the first channel circuit and a node. The comparator circuit is coupled with the transistor and controls it based on a difference between a representative voltage of the first input signal and a representative voltage of the node. The second channel circuit rectifies a second input signal using a diode coupled between an input of the second channel circuit and the node. The transistor may be a first MOSFET and the comparator circuit may be coupled with the first MOSFET by way of a second MOSFET. The second MOSFET controls the first MOSFET and is itself controlled by the comparator circuit.
    Type: Application
    Filed: June 7, 2018
    Publication date: December 13, 2018
    Applicant: OSRAM SYLVANIA Inc.
    Inventor: George Zhanqi Du