Patents by Inventor Georges Gibran Siddiqi

Georges Gibran Siddiqi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9236260
    Abstract: An integrated circuit has a doped silicon semiconductor with regions of insulators and bare silicon. The bare silicon regions are isolated from other bare silicon regions. A semiconductor device on the doped silicon semiconductor has at least two electrical connections to form regions of patterned metal. A metal is electroplated directly on each of the regions of patterned metal to form plated connections without a seed layer. A self-aligned silicide is located under each plated connection, formed by annealing, for the regions of plated metal on bare silicon.
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: January 12, 2016
    Assignee: HGST Netherlands B.V.
    Inventors: Christian René Bonhôte, Jeffrey S. Lille, Ricardo Ruiz, Georges Gibran Siddiqi
  • Patent number: 8512583
    Abstract: A method for making a master disk to be used in the nanoimprinting process to make patterned-media disks uses an electrically conductive substrate and guided self-assembly of a block copolymer to form patterns of generally radial lines and/or generally concentric rings of one of the block copolymer components. A metal is electroplated onto the substrate in the regions not protected by the lines and/or rings. After removal of the block copolymer component, the remaining metal pattern is used as an etch mask to fabricate either the final master disk or two separate molds that are then used to fabricate the master disk.
    Type: Grant
    Filed: September 19, 2011
    Date of Patent: August 20, 2013
    Assignee: HGST Netherlands B.V.
    Inventors: Christian Rene′ Bonhote, Jeffrey S. Lille, Ricardo Ruiz, Georges Gibran Siddiqi
  • Publication number: 20130154020
    Abstract: An integrated circuit has a doped silicon semiconductor with regions of insulators and bare silicon. The bare silicon regions are isolated from other bare silicon regions. A semiconductor device on the doped silicon semiconductor has at least two electrical connections to form regions of patterned metal. A metal is electroplated directly on each of the regions of patterned metal to form plated connections without a seed layer. A self-aligned silicide is located under each plated connection, formed by annealing, for the regions of plated metal on bare silicon.
    Type: Application
    Filed: December 16, 2011
    Publication date: June 20, 2013
    Applicant: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Christian René Bonhôte, Jeffrey S. Lille, Ricardo Ruiz, Georges Gibran Siddiqi
  • Publication number: 20130068719
    Abstract: A method for making a master disk to be used in the nanoimprinting process to make patterned-media disks uses an electrically conductive substrate and guided self-assembly of a block copolymer to form patterns of generally radial lines and/or generally concentric rings of one of the block copolymer components. A metal is electroplated onto the substrate in the regions not protected by the lines and/or rings. After removal of the block copolymer component, the remaining metal pattern is used as an etch mask to fabricate either the final master disk or two separate molds that are then used to fabricate the master disk.
    Type: Application
    Filed: September 19, 2011
    Publication date: March 21, 2013
    Inventors: Christian Rene' Bonhote, Jeffrey S. Lille, Ricardo Ruiz, Georges Gibran Siddiqi