Abstract: A method for controlling the plasma etching of semiconductor wafers determines the impedance of a plasma chamber using values representing voltage, current, and the phase angle between them, as provided by a sensor. All or less than all of the data during a first time period may be used to calculate a model. During a second time period, real time data is used to calculate a version of the instant impedance of the chamber. This version of impendence is compared to a time-projected version of the model. The method determines that etching should be stopped when the received data deviates from the extrapolated model by a certain amount. In some embodiments a rolling average is used in the second time period, the rolling average compared to the model to determine the end point condition.

Abstract: A method and system to obtain a high power density plasma to efficiently generate high concentrations of plasma downstream from one or more plasma sources. A first embodiment of the invention involves a method to provide an improved power density for dissociating one or more gases to create plasma. A second embodiment of the invention involves a method to provide multiple chambers for dissociating one or more gases to create plasma. A third embodiment involves an apparatus using a constriction in a discharge chamber containing one or more gases, to provide an improved power density for dissociating one or more gases to create plasma. A fourth embodiment involves an apparatus using a constriction in multiple discharge chambers containing one or more gases, to provide an improved power density for dissociating one or more gases to create plasma.