Abstract: Disclosed herein is a treatment apparatus. The treatment apparatus includes a rotatable gantry system positioned at least partially around a patient support and a first source of radiation coupled to the rotatable gantry system. The first source of radiation is configured to emit imaging x-ray radiation after pausing for a time interval between periodic emissions. The apparatus further includes a radiation detector configured to receive x-ray radiation from the first radiation source and generate tomographic data from the received radiation. The radiation detector is subject to a transient effect caused by at least one of polarization and charge trapping. The time interval is sufficiently long for the transient effect to substantially dissipate.

Abstract: Disclosed herein is an imaging system including a first x-ray source configured to produce first x-ray photons in a first energy range suitable for imaging, project the first x-ray photons onto an area designated for imaging, a rotatable gantry configured to rotate the first x-ray source such that the first x-ray source traverses an angular path, and a data processor having an analytical portion. The analytical portion is configured to collect first data relating to the transmission of the first x-ray photons through the area designated for imaging at a set of image-collection angles along the angular path, collect background data at a set of background-collection angles along the angular path, wherein the system acquires more than one image of the designated area for imaging between background angles. The analytical portion is also configured to remove errors in the first data using the background data, and generate a corrected image based on the removal of errors in the first data.

Abstract: Disclosed herein is an imaging system including a first x-ray source configured to produce first x-ray photons in a first energy range suitable for imaging, project the first x-ray photons onto an area designated for imaging, a rotatable gantry configured to rotate the first x-ray source such that the first x-ray source traverses an angular path, and a data processor having an analytical portion. The analytical portion is configured to collect first data relating to the transmission of the first x-ray photons through the area designated for imaging at a set of image-collection angles along the angular path, collect background data at a set of background-collection angles along the angular path, wherein the system acquires more than one image of the designated area for imaging between background angles. The analytical portion is also configured to remove errors in the first data using the background data, and generate a corrected image based on the removal of errors in the first data.

Abstract: A set of N standard bin count distributions may be generated by irradiating a test radiation detector system with an X-ray beam attenuated by a respective one of N different K-edge filters for each of the at least one X-ray source energy setting. Energy bins of detectors of a target radiation detector system may be calibrated by generating measured bin count distributions for each calibration setting in which a respective one of the N different K-edge filters attenuates a source X-ray beam. Calibration parameters of the detectors of the target radiation detector system may be adjusted to match each of the measured bin count distributions to a corresponding standard bin count distribution. In addition, energy resolution of the radiation detectors can be measured and calibrated by fitting a portion of the measured X-ray spectrum near a K-edge to a fitting function.

Abstract: Various embodiments include a structure that is configured to emit infrared (IR) light when exposed to ionizing radiation, such as X ray and gamma radiation, and to be positioned adjacent to a radiation detector so that infrared light illuminates the radiation detector when the structure and detector are exposed to the ionizing radiation. The structure may include a layer that is opaque to ultraviolet (UV) and visible light, another layer that is opaque to UV and visible light, and an intermediate layer that is configured to emit IR light when exposed to ionizing radiation. The intermediate layer may be a single layer. The intermediate layer may be two layers including a layer configured to emit UV or visible light when exposed to ionizing radiation and a layer configured to emit IR light when exposed to UV or visible light.

Abstract: Various embodiments include an imaging system and methods of operating the system to reduce effects from space charge formation in radiation detectors. The imaging system includes a radiation detector configured to detect photon energy from ionizing radiation, a source of ionizing radiation configured to emit a beam of radiation toward the radiation detector, and a chopper disposed between the radiation detector and the source of ionizing radiation, wherein the chopper is configured to periodically block the beam of radiation from reaching the radiation detector. The chopper may be configured to limit delivery of photon energy to the radiation detector to durations shorter than an onset time of dynamic polarization and E-field relaxation. In some embodiments, the chopper is a rotating chopper rotated by a drive motor. In some embodiments, the chopper is a shutter.

Abstract: A method and system for selecting servers for storage of replicas of a block of data is provided. The system selects a first server for storage of the data. The first server has a first processor utilization classification and a first reimaging rate classification. The system then selects a second server for storage of the data. The second server has a second processor utilization classification and a second reimaging rate classification. The system selects the second server so that the second processor utilization classification is different from the first processor utilization classification and the second reimaging rate classification is different from the first reimaging rate classification.

Abstract: A set of N standard bin count distributions may be generated by irradiating a test radiation detector system with an X-ray beam attenuated by a respective one of N different K-edge filters for each of the at least one X-ray source energy setting. Energy bins of detectors of a target radiation detector system may be calibrated by generating measured bin count distributions for each calibration setting in which a respective one of the N different K-edge filters attenuates a source X-ray beam. Calibration parameters of the detectors of the target radiation detector system may be adjusted to match each of the measured bin count distributions to a corresponding standard bin count distribution. In addition, energy resolution of the radiation detectors can be measured and calibrated by fitting a portion of the measured X-ray spectrum near a K-edge to a fitting function.

Abstract: A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.

Abstract: A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.

Abstract: A method and system for selecting servers for storage of replicas of a block of data is provided. The system selects a first server for storage of the data. The first server has a first processor utilization classification and a first reimaging rate classification. The system then selects a second server for storage of the data. The second server has a second processor utilization classification and a second reimaging rate classification. The system selects the second server so that the second processor utilization classification is different from the first processor utilization classification and the second reimaging rate classification is different from the first reimaging rate classification.

Abstract: A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.

Abstract: A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.