Abstract: A method and apparatus for EMI shielding of an electronic package is described. The method includes applying a patterned package support to a transport tray, and placing one or more electronic packages in aligned contact with one or more open features of the patterned package support such that a peripheral region of the electronic package contacts an upper surface of the patterned package support and a central region overhangs the open feature. The method further includes depositing one or more metal layers onto the one or more electronic packages and patterned package support, wherein the open features in the patterned package support allow metal layer deposition on the sidewalls of the one or more electronic packages and protect at least a portion of the underside of the one or more electronic packages.

Abstract: Disclosed herein are methods and systems for conditioning a polymeric layer on a substrate to enable adhesion of a metal layer to the polymeric layer. Techniques may include conditioning the polymeric layer with nitrogen-containing plasma to generate a nitride layer on the surface of the polymeric layer. In another embodiment, the conditioning may include depositing a CuN layer using a lower power copper sputtering process in a nitrogen rich environment. Following the condition process, a higher power copper deposition or sputtering process may be used to deposit copper onto the polymeric layer with good adhesion properties.

Abstract: Techniques disclosed herein a method and system for conditioning a polymeric layer on a substrate to enable adhesion of a metal layer to the polymeric layer. Techniques may include conditioning the polymeric layer with nitrogen-containing plasma to generate a nitride layer on the surface of the polymeric layer. In another embodiment, the conditioning may include depositing a CuN layer using a lower power copper sputtering process in a nitrogen rich environment. Following the condition process, a higher power copper deposition or sputtering process may be used to deposit copper onto the polymeric layer with good adhesion properties.

Abstract: Disclosed herein are methods and systems for conditioning a polymeric layer on a substrate to enable adhesion of a metal layer to the polymeric layer. Techniques may include conditioning the polymeric layer with nitrogen-containing plasma to generate a nitride layer on the surface of the polymeric layer. In another embodiment, the conditioning may include depositing a CuN layer using a lower power copper sputtering process in a nitrogen rich environment. Following the condition process, a higher power copper deposition or sputtering process may be used to deposit copper onto the polymeric layer with good adhesion properties.

Abstract: Techniques disclosed herein a method and system for conditioning a polymeric layer on a substrate to enable adhesion of a metal layer to the polymeric layer. Techniques may include conditioning the polymeric layer with nitrogen-containing plasma to generate a nitride layer on the surface of the polymeric layer. In another embodiment, the conditioning may include depositing a CuN layer using a lower power copper sputtering process in a nitrogen rich environment. Following the condition process, a higher power copper deposition or sputtering process may be used to deposit copper onto the polymeric layer with good adhesion properties.

Abstract: Methods of forming light-emitting structures, as well as related devices and/or systems are described. In some cases, the methods utilize a layer transfer and/or layer separation step(s) used to form such structures.

Abstract: Methods of forming light-emitting structures, as well as related devices and/or systems are described. In some cases, the methods utilize a layer transfer and/or layer separation step(s) used to form such structures.