Abstract: A deoxidation system for purifying target material for an EUV light source includes a furnace having a central region and a heater for heating the central region in a uniform manner. A vessel is inserted in the central region of the furnace, and a crucible is disposed within the vessel. A closure device covers an open end of the vessel to form a seal having vacuum and pressure capability. The system also includes a gas input tube, a gas exhaust tube, and a vacuum port. A gas supply network is coupled in flow communication with an end of the gas input tube and a gas supply network is coupled in flow communication with an end of the gas exhaust tube. A vacuum network is coupled in flow communication with one end of the vacuum port. A method and apparatus for purifying target material also are described.

Abstract: A deoxidation system for purifying target material for an EUV light source includes a furnace having a central region and a heater for heating the central region in a uniform manner. A vessel is inserted in the central region of the furnace, and a crucible is disposed within the vessel. A closure device covers an open end of the vessel to form a seal having vacuum and pressure capability. The system also includes a gas input tube, a gas exhaust tube, and a vacuum port. A gas supply network is coupled in flow communication with an end of the gas input tube and a gas supply network is coupled in flow communication with an end of the gas exhaust tube. A vacuum network is coupled in flow communication with one end of the vacuum port. A method and apparatus for purifying target material also are described.

Abstract: A deoxidation system for purifying target material for an EUV light source includes a furnace having a central region and a heater for heating the central region in a uniform manner. A vessel is inserted in the central region of the furnace, and a crucible is disposed within the vessel. A closure device covers an open end of the vessel to form a seal having vacuum and pressure capability. The system also includes a gas input tube, a gas exhaust tube, and a vacuum port. A gas supply network is coupled in flow communication with an end of the gas input tube and a gas supply network is coupled in flow communication with an end of the gas exhaust tube. A vacuum network is coupled in flow communication with one end of the vacuum port. A method and apparatus for purifying target material also are described.

Abstract: A deoxidation system for purifying target material for an EUV light source includes a furnace having a central region and a heater for heating the central region in a uniform manner. A vessel is inserted in the central region of the furnace, and a crucible is disposed within the vessel. A closure device covers an open end of the vessel to form a seal having vacuum and pressure capability. The system also includes a gas input tube, a gas exhaust tube, and a vacuum port. A gas supply network is coupled in flow communication with an end of the gas input tube and a gas supply network is coupled in flow communication with an end of the gas exhaust tube. A vacuum network is coupled in flow communication with one end of the vacuum port. A method and apparatus for purifying target material also are described.

Abstract: An EUV light source target material handling system is disclosed which may comprise a droplet generator having a target material reservoir in which the target material may be replenished while a nozzle portion of the droplet generator is maintained at temperature. Also disclosed is a system for selectively draining spent target material.

Abstract: An EUV light source target material handling system is disclosed which may comprise a droplet generator having a target material reservoir in which the target material may be replenished while a nozzle portion of the droplet generator is maintained at temperature. Also disclosed is a system for selectively draining spent target material.

Abstract: A plasma generating system is disclosed having a source of target material droplets, e.g. tin droplets, and a laser, e.g. a pulsed CO2 laser, producing a beam irradiating the droplets at an irradiation region, the plasma producing EUV radiation. For the device, the droplet source may comprise a fluid exiting an orifice and a sub-system producing a disturbance in the fluid which generates droplets having differing initial velocities causing at least some adjacent droplet pairs to coalesce together prior to reaching the irradiation region. In one implementation, the disturbance may comprise a frequency modulated disturbance waveform and in another implementation, the disturbance may comprise an amplitude modulated disturbance waveform.

Abstract: Ablation of holes having diameters as small as 82 nm and having clean walls was obtained in a poly(methyl methacrylate) on a silicon substrate by focusing pulses from a Ne-like Ar, 46.9 nm wavelength, capillary-discharge laser using a freestanding Fresnel zone plate diffracting into third order is described. Spectroscopic analysis of light from the ablation has also been performed. These results demonstrate the use of focused coherent EUV/SXR light for the direct nanoscale patterning of materials.

Abstract: A plasma generating system is disclosed having a source of target material droplets, e.g. tin droplets, and a laser, e.g. a pulsed CO2 laser, producing a beam irradiating the droplets at an irradiation region, the plasma producing EUV radiation. For the device, the droplet source may comprise a fluid exiting an orifice and a sub-system producing a disturbance in the fluid which generates droplets having differing initial velocities causing at least some adjacent droplet pairs to coalesce together prior to reaching the irradiation region. In one implementation, the disturbance may comprise a frequency modulated disturbance waveform and in another implementation, the disturbance may comprise an amplitude modulated disturbance waveform.

Abstract: Ablation of holes having diameters as small as 82 nm and having clean walls was obtained in a poly(methyl methacrylate) on a silicon substrate by focusing pulses from a Ne-like Ar, 46.9 nm wavelength, capillary-discharge laser using a freestanding Fresnel zone plate diffracting into third order is described. Spectroscopic analysis of light from the ablation has also been performed. These results demonstrate the use of focused coherent EUV/SXR light for the direct nanoscale patterning of materials.

Abstract: A plasma generating system is disclosed having a source of target material droplets, e.g. tin droplets, and a laser, e.g. a pulsed CO2 laser, producing a beam irradiating the droplets at an irradiation region, the plasma producing EUV radiation. For the device, the droplet source may comprise a fluid exiting an orifice and a sub-system producing a disturbance in the fluid which generates droplets having differing initial velocities causing at least some adjacent droplet pairs to coalesce together prior to reaching the irradiation region. In one implementation, the disturbance may comprise a frequency modulated disturbance waveform and in another implementation, the disturbance may comprise an amplitude modulated disturbance waveform.

Abstract: Ablation of holes having diameters as small as 82 nm and having clean walls was obtained in a poly(methyl methacrylate) on a silicon substrate by focusing pulses from a Ne-like Ar, 46.9 nm wavelength, capillary-discharge laser using a freestanding Fresnel zone plate diffracting into third order is described. Spectroscopic analysis of light from the ablation has also been performed. These results demonstrate the use of focused coherent EUV/SXR light for the direct nanoscale patterning of materials.