Abstract: A particle beam system includes: a particle source to generate a beam of charged particles; a first multi-lens array including a first multiplicity of individually adjustable and focusing particle lenses so that at least some of the particles pass through openings in the multi-lens array in the form of a plurality of individual particle beams; a second multi-aperture plate including a multiplicity of second openings downstream of the first multi-lens array so that some of the particles which pass the first multi-lens array impinge on the second multi-aperture plate and some of the particles which pass the first multi-lens array pass through the openings in the second multi-aperture plate; and a controller configured to supply an individually adjustable voltage to the particle lenses of the first multi-lens array and thus individually adjust the focusing of the associated particle lens for each individual particle beam.

Abstract: A particle beam system and, such as a multi-beam particle microscope, can have a current intensity of individual particle beams that is flexibly set over large value ranges without structural modifications. The particle beam system can include a condenser lens system, a pre-multi-lens array with a specific pre-counter electrode and a pre-multi-aperture plate, and a multi-lens array. The system can includes a controller to supply adjustable excitations to the condenser lens system and the pre-counter electrode so that the charged particles are incident on the pre-multi-aperture plate in telecentric manner.

Abstract: A method of operating a multi-beam particle beam system includes: generating a multiplicity of particle beams such that they each pass through multipole elements that are either intact or defective; focusing the particle beams in a predetermined plane; determining excitations for the deflection elements of the multipole elements; exciting the deflection elements of the multipole elements that are intact with the determined excitations; modifying the determined excitations for the deflection elements of the multipole elements that are defective; and exciting the deflection elements of the defective multipole elements with the modified excitations. Modifying the determined excitations includes adding corrective excitations to the determined excitations. The corrective excitations are the same for all deflection elements of the defective multipole element.

Abstract: A particle beam system includes: a particle source to generate a beam of charged particles; a first multi-lens array including a first multiplicity of individually adjustable and focusing particle lenses so that at least some of the particles pass through openings in the multi-lens array in the form of a plurality of individual particle beams; a second multi-aperture plate including a multiplicity of second openings downstream of the first multi-lens array so that some of the particles which pass the first multi-lens array impinge on the second multi-aperture plate and some of the particles which pass the first multi-lens array pass through the openings in the second multi-aperture plate; and a controller configured to supply an individually adjustable voltage to the particle lenses of the first multi-lens array and thus individually adjust the focusing of the associated particle lens for each individual particle beam.

Abstract: The disclosure relates to an optical element, in particular for a microlithographic projection exposure apparatus. The optical element has an optical effective surface. The optical element includes a substrate, a layer system that is present on the substrate, and a protective cover extending over an edge region of the optical element that is adjacent to the optical effective surface. During operation of the optical element, the protective coating reduces an ingress of hydrogen radicals into the layer system in comparison with an analogous design without the protective cover, wherein a gap is formed between the protective cover and the layer system.

Abstract: An EUV collector for use in an EUV projection exposure apparatus includes at least one mirror surface having surface structures for scattering a used EUV wavelength (?) of used EUV light. The mirror surface has a surface height with a spatial wavelength distribution between a lower limit spatial wavelength and an upper limit spatial wavelength. An effective roughness (rmsG) below the lower limit spatial wavelength (PG) satisfies the following relation: (4? rmsG cos(?)/?)2<0.1. ? denotes an angle of incidence of the used EUV light at the mirror surface. The following applies to an effective roughness (rmsGG?) between the lower limit spatial wavelength (PG) and the upper limit spatial wavelength (PG?): 1.5 rmsG<rmsGG?<6 rmsG.

Abstract: The disclosure relates to an optical element, in particular for a microlithographic projection exposure apparatus. The optical element has an optical effective surface. The optical element includes a substrate, a layer system that is present on the substrate, and a protective cover extending over an edge region of the optical element that is adjacent to the optical effective surface. During operation of the optical element, the protective coating reduces an ingress of hydrogen radicals into the layer system in comparison with an analogous design without the protective cover, wherein a gap is formed between the protective cover and the layer system.

Abstract: An EUV collector for use in an EUV projection exposure apparatus includes at least one mirror surface having surface structures for scattering a used EUV wavelength (?) of used EUV light. The mirror surface has a surface height with a spatial wavelength distribution between a lower limit spatial wavelength and an upper limit spatial wavelength. An effective roughness (rmsG) below the lower limit spatial wavelength (PG) satisfies the following relation: (4 ? rmsG cos(?)/?)2<0.1. ? denotes an angle of incidence of the used EUV light at the mirror surface. The following applies to an effective roughness (rmsGG?) between the lower limit spatial wavelength (PG) and the upper limit spatial wavelength (PG?): 1.5 rmsG<rmsGG?<6 rmsG.