Abstract: The proposed apparatus is used to apply thin films of metals semiconductor and dielectric materials onto the surfaces of different articles.The apparatus comprises a vacuum chamber accommodating a discharge chamber with at least a single slit in one of its walls. An electric field produces a plasma flow between an anode and a hot cathode arranged in the discharge chamber so that the hot cathode is located opposite the slit of the discharge chamber. A magnetic system produces a magnetic field extending through the hot cathode and slit perpendicular to the electric field between the anode and hot cathode. A target and an article holder are arranged on opposite sides of the plasma flow leaving the slit.As a negative potential is applied to the target, plasma ions sputter the material of the target, which is deposited on the article, producing a thin film on its surface.