Patents by Inventor Georgy Jacob

Georgy Jacob has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Wordline coupling techniques
    Patent number: 11830542
    Abstract: Various implementations described herein are directed to a device having a first read wordline formed in a first metal layer and a read wordline driver having an output node coupled to one or more memory cells via the first read wordline formed in the first metal layer. The device may include a second read wordline formed in a second metal layer that is different than the first metal layer, and the read wordline driver may have an input node coupled to the second read wordline formed in the second metal layer.
    Type: Grant
    Filed: August 29, 2022
    Date of Patent: November 28, 2023
    Assignee: Arm Limited
    Inventors: Rajiv Kumar Sisodia, Disha Singh, Gautam Garg, Srinivasan Srinath, Georgy Jacob
  • Wordline Coupling Techniques
    Publication number: 20220415385
    Abstract: Various implementations described herein are directed to a device having a first read wordline formed in a first metal layer and a read wordline driver having an output node coupled to one or more memory cells via the first read wordline formed in the first metal layer. The device may include a second read wordline formed in a second metal layer that is different than the first metal layer, and the read wordline driver may have an input node coupled to the second read wordline formed in the second metal layer.
    Type: Application
    Filed: August 29, 2022
    Publication date: December 29, 2022
    Inventors: Rajiv Kumar Sisodia, Disha Singh, Gautam Garg, Srinivasan Srinath, Georgy Jacob
  • Wordline coupling techniques
    Patent number: 11430506
    Abstract: Various implementations described herein are directed to a device having a first read wordline formed in a first metal layer and a read wordline driver having an output node coupled to one or more memory cells via the first read wordline formed in the first metal layer. The device may include a second read wordline formed in a second metal layer that is different than the first metal layer, and the read wordline driver may have an input node coupled to the second read wordline formed in the second metal layer.
    Type: Grant
    Filed: February 10, 2020
    Date of Patent: August 30, 2022
    Assignee: Arm Limited
    Inventors: Rajiv Kumar Sisodia, Disha Singh, Gautam Garg, Srinivasan Srinath, Georgy Jacob
  • Wordline Coupling Techniques
    Publication number: 20210249070
    Abstract: Various implementations described herein are directed to a device having a first read wordline formed in a first metal layer and a read wordline driver having an output node coupled to one or more memory cells via the first read wordline formed in the first metal layer. The device may include a second read wordline formed in a second metal layer that is different than the first metal layer, and the read wordline driver may have an input node coupled to the second read wordline formed in the second metal layer.
    Type: Application
    Filed: February 10, 2020
    Publication date: August 12, 2021
    Inventors: Rajiv Kumar Sisodia, Disha Singh, Gautam Garg, Srinivasan Srinath, Georgy Jacob