Abstract: An optical display system includes a source of white uncollimated light, a color separator for separating the white light into spectral components, a reflective ferroelectric light valve for spatially modulating the spectral components, and a polarizing beam splitter for directing vertically polarized light towards a display lens. The system further includes a corrective film disposed in an optical path between the white light source and the light valve. The film, which may be made of a ferroelectric material or other birefringent material, ensures that retardance of the light valve is approximately 180 degrees or some other desired angle over a spectrum of interest. In this manner, the light valve is achromatized by the film.

Abstract: A storage device allows the state of charge of a main battery to be determined by measuring the state of charge of a dummy battery. The storage device may provide power to an electronic appliance such as a portable computer. The main and dummy batteries each have a storage capacity and a self-discharge rate. The storage capacity of the dummy battery is less than the storage capacity of the main battery; for example, the storage capacity of the dummy battery may be only about 1% of that of the main battery. The main and dummy batteries are configured so that the self-discharge rates thereof are substantially equal. The storage device also includes discharge circuitry which is configured so that the dummy battery discharges at a rate faster than the main battery when a load is connected to and drawing current from the main battery.

Abstract: This invention concerns peptides (I) having intracellular potassium channel modulating activity comprising the amino acid sequence shown in SEQ ID No: 2:(N terminal function) (I) Met Ile Ser Ser Val Cys Val Ser Ser 1 5} Tyr Arg Gly Arg Lys Ser Gly Asn Lys 10 15 Pro Pro Ser Lys Thr Cys Leu Lys Glu Glu 20 25 (C terminal function)in which the cysteines are optionally linked via a disulphide bridge and wherein ______________________________________ Met represents L-methionine Ile represents L-isoleucine Ser represents L-serine Val represents L-valine Cys represents L-cysteine Tyr represents L-tyrosine Arg represents L-arginine Gly represents glycine Lys represents L-lysine Asn represents L-asparagine Pro represents L-proline Thr represents L-threonine Leu represents L-leucine Glu represents L-glutamic acid ______________________________________or a variant thereof,with the proviso that excluded is the 13-Lys variant (where 13-Arg is replaced by 13-Lys) in which the cysteines are not linked via a disulphide bridge

Abstract: This disclosure relates to a page identification system for multiple page processing systems which operates by measuring color. Detected color is compared to a look-up table that stores color characteristics for at least one known page. If a match is detected, within a tolerance selected in response to expected measurement variance, then the system produces a page identification code used in page processing. Preferably, the system is embodied in a clipboard device that automatically associates electronic data with a corresponding one of multiple pages. A stylus can be used to write on each page, and each time the stylus is used, the system automatically optically scans the page, produces a page identification code, and associates electronic data with the current page. If no match is detected in the lookup table, then the system enters a learn mode corresponding to presumed detection of a new page.

Abstract: A method for compensation for the proximity effect in electron beam lithography on an e-beam resist material. The exposed surface of the resist material is subdivided into non-overlapping pixels of approximately equal area, with a first set of pixels representing a selected pattern for e-beam lithography and a second set of pixels including all other pixels. The cumulative exposure for each pixel in the first set is computed by adding to the direct beam exposure of that pixel the contributions of spillover (backscattering) exposure arising from exposure of nearby pixels in the second set. The cumulative exposure for each pixel in the second set is computed by adding to the reduced beam exposure of that pixel the contributions of spillover exposure arising from exposure of nearby pixels in the second set. The resist material is then irradiated, pixel-by-pixel with a fixed electron beam radius, with the exposure at each pixel being equal to the cumulative exposure computed for that pixel.

Abstract: A method and apparatus for hybrid integrated circuit lithography wherein an E-beam lithographic exposure is accurately aligned with a preexisting optical lithographic exposure. In one embodiment, the method includes deflecting an E-beam to chip marks while holding the integrated circuit substantially stationary to determine a plurality of deflector parameters, and then moving the integrated circuit while holding the E-beam substantially stationary to determine a number of stage parameters. In a second embodiment, the chip marks are accessed by a combination of stage movements and deflector movements to determine a number of compound parameters. The stage and deflector parameters or, alternatively, the compound parameters, are used to convert the pattern data base of an E-beam machine into a transformed data base which accurately matches the E-beam exposure to the optical exposure.

Abstract: In electron beam lithography, a beam of incident electrons exposes a preselected circuit pattern in a thin resist layer deposited on top of a substrate to be etched. Some of the electrons scatter from the substrate back into the resist layer producing an undesired exposure which produces variable resolution of features. In accordance with the disclosed technique, the region of the resist which is complementary to the desired circuit pattern is also exposed by an electron beam which has been adjusted to produce an exposure approximating that due to backscattering. This additional exposure removes the spatial variability in resolution attainable by the electron beam lithography.