Abstract: An apparatus for treating a wafer of semiconductor material so that individual devices which may be simple devices or complete complex integrated circuits defined on the front surface of the wafer can be easily separated from the wafer. The apparatus aligns the wafer to a fixed reference position, inverts the aligned wafer to expose its backside and transfers it with controlled motion to a set position under a laser beam apparatus. The laser beam scans the backside of the wafer to create in the kerf area between each of the devices an easily fractured region. While maintaining the wafer alignment the laser treated wafer may be transferred to a flexible pressure sensitive tape tensioned across the frame which maintains the wafer alignment. The wafer, while on the frame can be tested, fractured into respective individual devices, and selectively removed from the tape.

Abstract: A wafer of semiconductor material having a plurality of units defined on its face is subdivided by treating the wafer, on its back or reverse side, in the kerf regions between the units, where division of the units is desired, such that the material of the wafer in the treated kerf regions is converted to a material having a breaking strength lower than the breaking strength of the semiconductor material.