Abstract: Methods for transferring substrates in a system with a factory interface robot between at least one FOUP, a buffer coupled to a parasitic device and an inbound and outbound transfer station coupled to a processing tool are provided. In one embodiment, a method for transferring substrates includes transferring a first substrate on an end effector of a robot from a FOUP to a buffer station serving a parasitic device, moving the substrate from the buffer station into the parasitic device, picking up a second substrate on the end effector, compensating for a residence time of the first substrate in the parasitic device, transferring the second substrate to parasitic device from the end effector to the buffer station serving the parasitic device, and picking up the first substrate from the buffer station.

Abstract: A method and apparatus for conditioning a conductive polishing material is described. In one embodiment, the pad dresser comprises a backing plate adapted to coupled to a conditioning head assembly, the backing plate comprising a rigid disk having a first side and an opposing second side, the second side having a perpendicular orientation to a centerline of the backing plate, and an annular member having a base portion adhered to the second side of the backing plate, wherein the annular member defines a conditioning surface opposite the second side that is radially sloped relative to a plane of the second side.

Abstract: Methods for transferring substrates in a system with a factory interface robot between at least one FOUP, a buffer coupled to a parasitic device and an inbound and outbound transfer station coupled to a processing tool are provided. In one embodiment, a method for transferring substrates includes transferring a first substrate on an end effector of a robot from a FOUP to a buffer station serving a parasitic device, moving the substrate from the buffer station into the parasitic device, picking up a second substrate on the end effector, compensating for a residence time of the first substrate in the parasitic device, transferring the second substrate to parasitic device from the end effector to the buffer station serving the parasitic device, and picking up the first substrate from the buffer station.

Abstract: A method for electrochemical mechanical polishing (ECMP) is disclosed. The polishing rate and surface finish of the layer on the wafer are improved by controlling the surface speed of both the platen and head, controlling the current applied to the pad, and preselecting the density of the perforations on the fully conductive polishing pad. ECMP produces much higher removal rates, good surface finishes, and good planarization efficiency at a lower down force. Generally, increasing the surface speed of both the platen and the head will increase the surface smoothness. Also, increasing the current density on the wafer will increase the surface smoothness. There is virtually no difference in the smoothness of the wafer surface between the center, middle, and edge of the wafer. For copper, removal rates of 10,000 ?/min and greater can be achieved.

Abstract: A method for electrochemically processing a substrate is provided. In one embodiment, the method includes performing a conditioning procedure on a processing pad having a plurality of process cells, energizing the process cells by applying a voltage to the conditioned processing pad, placing a substrate having at least a conductive layer disposed thereon on the energized pad, and removing at least a portion of the conductive layer in the energized process cells. In another embodiment, a method for polishing a substrate includes placing an unused conductive pad having a plurality of process cells on a platen of a processing system, breaking in the pad on the platen, energizing the process cells by applying a voltage to the broken-in pad, placing a substrate having at least a conductive layer disposed thereon on the energized pad, and removing at least a portion of the conductive layer in the energized cells.

Abstract: Embodiments of a pad assembly for processing a substrate are provided. The pad assembly includes a plurality of discrete members and a plurality of apertures. Each of the plurality of discrete members include a first conductive layer and a second conductive layer, with an isolation layer therebetween, and a recess for byproduct accumulation. The second conductive layer comprises a plurality of reaction surfaces that are orthogonal to the upper and lower surfaces of the pad assembly.

Abstract: An apparatus and a method with fluid flow assist elements for electrochemical mechanical processing is provided in this invention. In one embodiment, the apparatus includes a first conductive layer having an upper surface adapted to contact a substrate, a second conductive layer disposed below the first conductive layer, an isolation layer disposed between the conductive layers, and a plurality of apertures, each having a first end formed through the first conductive layer and a second end formed through the second conductive layer, wherein the second ends of at least two apertures are laterally coupled by a channel.

Abstract: Tools and methods for in-situ characterizing of a surface of a polishing pad are described. A characterization tool is integrated with polishing tool so that the polishing pad can be monitored in-situ. The characterization tool and the polishing pad can be rotated or moved so that any portion of the polishing pad can be tested.

Abstract: Embodiments of a conditioning element for conditioning a processing pad are provided herein. In one embodiment, a conditioning element for conditioning a processing pad includes a body having a face. A plurality of diamond particles are disposed on the face and define a conditioning surface. The diamond particles are of a type selected from the group consisting of very blocky (4D), blocky (3D), and irregular (2D), and have a shape ratio less than or equal to 1.2. In one embodiment, the diamond particles have an average size of between about 85 and about 115 ?m. In one embodiment, the size of the diamond particles may have a standard of deviation that is less than about 5 ?m. In one embodiment, the diamond particles may have a spacing of greater than 400 ?m.

Abstract: Methods for transferring substrates in a system with a factory interface robot between at least one FOUP, a buffer coupled to a parasitic device and an inbound and outbound transfer station coupled to a processing tool are provided. In one embodiment, a method for transferring substrates includes transferring a first substrate on an end effector of a robot from a FOUP to a buffer station serving a parasitic device, moving the substrate from the buffer station into the parasitic device, picking up a second substrate on the end effector, compensating for a residence time of the first substrate in the parasitic device, transferring the second substrate to parasitic device from the end effector to the buffer station serving the parasitic device, and picking up the first substrate from the buffer station.