Abstract: There is disclosed a family of low dielectric, copper-exuding, boroaluminosilicate glasses particularly adapted to use in forming substrates for electronic devices such as integrated circuits. The glasses are capable of exuding copper oxide, have a coefficient of thermal expansion of 30-35.times.10.sup.-7 at 300.degree. C., a dielectric constant not over 5.0 at 100 KHz, a loss tangent not over 0.003 at 100 KHz and consist essentially, in percent by weight, of 56-64% SiO.sub.2 18-25% B.sub.2 O.sub.3, 3-11% Al.sub.2 O.sub.3, 0-2% CaO, 0-2% Li.sub.2 O, 0-1% K.sub.2 O, the Li.sub.2 O+K.sub.2 O+CaO being 1.5-3% and 1-20% CuO.

Abstract: An apparatus for use in liquid-phase, gas-phase and mixed-phase reactions is disclosed for providing an efficient flow-through design within which results a low pressure drop. The apparatus may be used as a catalyst or electrocatalyst and consists essentially of a ceramic substrate having thin walls with open porosity wherein said walls define a plurality of cells extending substantially longitudinally parallel through-and-through the substrate. The substrate includes an electrically conductive layer, having a resistivity of no greater than about 100 ohm-cm. The apparatus exhibits an improved structural geometry and provides greater meniscus control.

Abstract: There is disclosed a method of producing a transition metal pattern on a glass or glass-ceramic substrate by selective exudation of a transition metal from a glass substrate containing the metal as an oxide. The selective exudation is effected by applying an intense, well-focused source of energy to a glass in a pattern corresponding to the desired metal pattern. This develops localized heating, and thereby causes corresponding localized metal exudation from the glass. The metal pattern may be rendered electroconductive, and may constitute a pattern of interconnecting lines for microcircuitry.

Abstract: There is disclosed a family of low dielectric, copper-exuding, boroaluminosilicate glasses particularly adapted to use in forming substrates for electronic devices such as integrated circuits. The glasses are capable of exuding copper oxide, have a coefficient of thermal expansion of 30-35.times.10.sup.-7 at 300.degree. C., a dielectric constant not over 5.0 at 100 KHz, a loss tangent not over 0.003 at 100 KHz and consist essentially, in percent by weight, of 56-64% SiO.sub.2, 18-25% B.sub.2 O.sub.3, 3-11% Al.sub.2 O.sub.3, 0-2% CaO, 0-2% Li.sub.2 O, 0-1% K.sub.2 O, the Li.sub.2 O+CaO being 1.5-3% and 1-20% CuO.

Abstract: This invention is concerned with producing glasses in the As-Se-Cu field exhibiting properties rendering them eminently suitable for photoelectrodes of photoelectrochemical devices. The glasses consist essentially of compositions within the region ABCDEA of FIG. 1.