Patents by Inventor Gerald DALLMANN

Gerald DALLMANN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure and method for making same
    Patent number: 9230885
    Abstract: One or more embodiments relate to a method for forming a semiconductor structure, comprising: providing a workpiece; forming a dielectric barrier layer over the workpiece; forming an opening through the dielectric barrier layer; forming a seed layer over the dielectric barrier layer and within the dielectric barrier layer opening; and electroplating a first fill layer on the seed layer.
    Type: Grant
    Filed: October 23, 2013
    Date of Patent: January 5, 2016
    Assignee: Infineon Technologies AG
    Inventors: Dirk Meinhold, Gerald Dallmann, Alfred Vater
  • Semiconductor structure having metal oxide or nirtride passivation layer on fill layer and method for making same
    Patent number: 8872341
    Abstract: One or more embodiments relate to a method of forming a semiconductor device, comprising: forming a structure, the structure including at least a first element and a second element; and forming a passivation layer over the structure, the passivation layer including at least the first element and the second element, the first element and the second element of the passivation layer coming from the structure.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: October 28, 2014
    Assignee: Infineon Technologies AG
    Inventors: Gerald Dallmann, Heike Rosslau, Norbert Urbansky, Scott Wallace
  • SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING SAME
    Publication number: 20140077379
    Abstract: One or more embodiments relate to a method for forming a semiconductor structure, comprising: providing a workpiece; forming a dielectric barrier layer over the workpiece; forming an opening through the dielectric barrier layer; forming a seed layer over the dielectric barrier layer and within the dielectric barrier layer opening; and electroplating a first fill layer on the seed layer.
    Type: Application
    Filed: October 23, 2013
    Publication date: March 20, 2014
    Inventors: Meinhold DIRK, Gerald DALLMANN, Alfred VATER
  • Semiconductor structure and method for making same
    Patent number: 8580687
    Abstract: One or more embodiments relate to a method for forming a semiconductor structure, comprising: providing a workpiece; forming a dielectric barrier layer over the workpiece; forming an opening through the dielectric barrier layer; forming a seed layer over the dielectric barrier layer and within the dielectric barrier layer opening; and electroplating a first fill layer on the seed layer.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: November 12, 2013
    Assignee: Infineon Technologies AG
    Inventors: Gerald Dallmann, Dirk Meinhold, Alfred Vater
  • SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING SAME
    Publication number: 20120080795
    Abstract: One or more embodiments relate to a method for forming a semiconductor structure, comprising: providing a workpiece; forming a dielectric barrier layer over the workpiece; forming an opening through the dielectric barrier layer; forming a seed layer over the dielectric barrier layer and within the dielectric barrier layer opening; and electroplating a first fill layer on the seed layer.
    Type: Application
    Filed: September 30, 2010
    Publication date: April 5, 2012
    Inventors: Gerald DALLMANN, Dirk MEINHOLD, Alfred VATER
  • SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING SAME
    Publication number: 20120074573
    Abstract: One or more embodiments relate to a method of forming a semiconductor device, comprising: forming a structure, the structure including at least a first element and a second element; and forming a passivation layer over the structure, the passivation layer including at least the first element and the second element, the first element and the second element of the passivation layer coming from the structure.
    Type: Application
    Filed: September 29, 2010
    Publication date: March 29, 2012
    Inventors: Gerald DALLMANN, Heike ROSSLAU, Norbert URBANSKY, Scott WALLACE