Abstract: An apparatus includes circuitry configured to generate multiple results, each result using a different read voltage, in response to one or each received data access command. The multiple read results may be used to dynamically calibrate a read voltage assigned to generate a read result in response to a read command.

Abstract: Aspects of the present disclosure are directed to performing varying frequency memory sub-system background scans using either or both a timer and an I/O event limit. This can be accomplished by identifying a background scan trigger event from one of multiple possible types of background scan trigger events, such as a timer expiration or reaching an event count limit. In response to the background scan trigger event, a background scan can be initiated on a memory portion. The background scan can produce results, such as CDF-based data. When a metric based on the results exceeds a background scan limit, a refresh relocation can be performed and logged. A metric can be generated based on the CDF-based data, obtained error recovery depth data, or refresh relocation event data. When the metric is above or below corresponding background scan thresholds, a background scan frequency can be adjusted.

Abstract: Several embodiments of memory devices and systems with offset memory component automatic calibration error recovery are disclosed herein. In one embodiment, a system includes at least one memory region and calibration circuitry. The memory region has memory cells that read out data states in response to application of a current read level signal. The calibration circuitry is operably coupled to the at least one memory region and is configured to determine a read level offset value corresponding to one or more of a plurality of offset read level test signals, including a base offset read level test signal. The base offset read level test signal is offset from the current read level signal by a predetermined value. The calibration circuitry is further configured to output the determined read level offset value.

Abstract: Several embodiments of systems incorporating memory components are disclosed herein. In one embodiment, a memory system can include a memory component and a processing device configured to access quality metrics corresponding to memory regions of the memory component. In some embodiments, the processing device can compare the quality metrics to one or more memory management thresholds. In some embodiments, when the quality metrics meet and/or exceed a first threshold, a refresh operation can be scheduled and/or performed on a corresponding memory region. In these and other embodiments, when the quality metrics meet and/or exceed a second threshold, the memory region is retired and removed from an active pool of memory regions.

Abstract: A die read counter and a block read counter are maintained for a specified block of a memory device. An estimated number of read events associated with the specified block is determined based on a value of the block read counter and a value of the die read counter. Responsive to determining that the estimated number of read events satisfies a criterion, a media management operation of one or more pages associated with the specified block is performed.

Abstract: Several embodiments of systems incorporating memory sub-systems are disclosed herein. In one embodiment, a memory sub-system can include a memory component and a processing device configured to perform a background scan on a memory region of the memory component. In some embodiments, the background scan includes generating a bit error count (BEC) of a codeword saved on the memory region and saving statistical information corresponding to the BEC of the codeword to a histogram statistics log. In some embodiments, when the BEC of the codeword is greater than a BEC threshold, a refresh operation is scheduled for the memory region and/or logged. In these and other embodiments, when one or more error recovery error correction code (ECC) operations do not correct bit errors in the codeword, a refresh and/or retirement operation is schedule for the memory region and/or is logged.

Abstract: Several embodiments of systems incorporating memory devices are disclosed herein. In one embodiment, a memory device can include a controller and a memory component operably coupled to the controller. The controller can include a memory manager, a quality metrics first in first out (FIFO) circuit, and an error correction code (ECC) decoder. In some embodiments, the ECC decoder can generate quality metrics relating to one or more codewords saved in the memory component and read into the controller. In these and other embodiments, the ECC decoder can stream the quality metrics to the quality metrics FIFO circuit, and the quality metrics FIFO circuit can stream the quality metrics to the memory manager. In some embodiments, the memory manager can save all or a subset of the quality metrics in the memory component and/or can use the quality metrics in post-processing, such as in error avoidance operations of the memory device.

Abstract: A memory system is disclosed, including a memory component and a processing device configured to decode one or more codewords saved to a memory region of the memory component, detect that a number of bit errors corresponding to the decoding of the codeword exceeds a correction capability of the processing device, and execute an error recovery routine to reduce the number of detected bit errors to within the correction capability. The error recovery routine can include error recovery operations that are sequentially executed either until the number of bit errors is successfully reduced to within the correction capability or until a set of the error recovery operations has been executed. The error recovery operations can be ordered according to one or more factors, including energy used to execute a respective error recovery operation, a duration of the respective operation, and/or a likelihood of success of the respective operation.

Abstract: An apparatus includes circuitry configured to generate multiple results, each result using a different read voltage, in response to one or each received data access command. The multiple read results may be used to dynamically calibrate a read voltage assigned to generate a read result in response to a read command.

Abstract: A system includes a memory circuitry configured to generate multiple results, each result using a different read voltage, in response to one or each received data access command. The multiple read results may be used to dynamically calibrate a read voltage assigned to generate a read result in response to a read command.

Abstract: Aspects of the present disclosure are directed to performing varying frequency memory sub-system background scans using either or both a timer and an I/O event limit. This can be accomplished by identifying a background scan trigger event from one of multiple possible types of background scan trigger events, such as a timer expiration or reaching an event count limit. In response to the background scan trigger event, a background scan can be initiated on a memory portion. The background scan can produce results, such as CDF-based data. When a metric based on the results exceeds a background scan limit, a refresh relocation can be performed and logged. A metric can be generated based on the CDF-based data, obtained error recovery depth data, or refresh relocation event data. When the metric is above or below corresponding background scan thresholds, a background scan frequency can be adjusted.

Abstract: Several embodiments of memory devices and systems with offset memory component automatic calibration error recovery are disclosed herein. In one embodiment, a system includes at least one memory region and calibration circuitry. The memory region has memory cells that read out data states in response to application of a current read level signal. The calibration circuitry is operably coupled to the at least one memory region and is configured to determine a read level offset value corresponding to one or more of a plurality of offset read level test signals, including a base offset read level test signal. The base offset read level test signal is offset from the current read level signal by a predetermined value. The calibration circuitry is further configured to output the determined read level offset value.

Abstract: A die read counter and a block read counter are maintained for a specified block of a memory device. An estimated number of read events associated with the specified block is determined based on a value of the block read counter and a value of the die read counter. Responsive to determining that the estimated number of read events satisfies a criterion, a media management operation of one or more pages associated with the specified block is performed.

Abstract: A total read counter, a plurality of die read counters, and a plurality of block read counters are maintained. Each die read counter is associated with a respective die of a memory device. A value of a block read counter and a value of a die read counter are determined for a specified block. Based on the value of the block read counter, the value of the die read counter, and the value of the total read counter, an estimated number of read events associated with the specified block of the memory device is determined. Responsive to determining that the estimated number of read events satisfies a predefined criterion, a media management operation of one or more pages associated with the specified block is performed.

Abstract: Aspects of the present disclosure are directed to performing varying frequency memory sub-system background scans using either or both a timer and an I/O event limit. This can be accomplished by identifying a background scan trigger event from one of multiple possible types of background scan trigger events, such as a timer expiration or reaching an event count limit. In response to the background scan trigger event, a background scan can be initiated on a memory portion. The background scan can produce results, such as CDF-based data. When a metric based on the results exceeds a background scan limit, a refresh relocation can be performed and logged. A metric can be generated based on the CDF-based data, obtained error recovery depth data, or refresh relocation event data. When the metric is above or below corresponding background scan thresholds, a background scan frequency can be adjusted.

Abstract: A total read counter, a plurality of die read counters, and a plurality of block read counters are maintained. Each die read counter is associated with a respective die of a memory device. A value of a block read counter and a value of a die read counter are determined for a specified block. Based on the value of the block read counter, the value of the die read counter, and the value of the total read counter, an estimated number of read events associated with the specified block of the memory device is determined. Responsive to determining that the estimated number of read events satisfies a predefined criterion, a media management operation of one or more pages associated with the specified block is performed.

Abstract: Several embodiments of memory devices and systems with offset memory component automatic calibration error recovery are disclosed herein. In one embodiment, a system includes at least one memory region and calibration circuitry. The memory region has memory cells that read out data states in response to application of a current read level signal. The calibration circuitry is operably coupled to the at least one memory region and is configured to determine a read level offset value corresponding to one or more of a plurality of offset read level test signals, including a base offset read level test signal. The base offset read level test signal is offset from the current read level signal by a predetermined value. The calibration circuitry is further configured to output the determined read level offset value.

Abstract: Several embodiments of systems incorporating memory sub-systems are disclosed herein. In one embodiment, a memory sub-system can include a memory component and a processing device configured to perform a background scan on a memory region of the memory component. In some embodiments, the background scan includes generating a bit error count (BEC) of a codeword saved on the memory region and saving statistical information corresponding to the BEC of the codeword to a histogram statistics log. In some embodiments, when the BEC of the codeword is greater than a BEC threshold, a refresh operation is scheduled for the memory region and/or logged. In these and other embodiments, when one or more error recovery error correction code (ECC) operations do not correct bit errors in the codeword, a refresh and/or retirement operation is schedule for the memory region and/or is logged.

Abstract: A memory quality engine can improve the operation of a memory system by setting more effective operating parameters, disabling or removing memory devices unable to meet performance requirements, and providing evaluations between memory populations. These improvements can be accomplished by converting quality measurements of a memory population into CDF-based data, formulating comparisons of the CDF-based data to metrics for quality analysis, and applying the quality analysis. In some implementations, the metrics for quality analysis can use one or more thresholds, such as a system health threshold. Formulating the comparison to these metrics can include determining an area between a baseline frequency and a curve specified by the CDF-based data. In some implementations, this area can further be defined by a lowest frequency bound and/or can be compared as a ratio to an area of a rectangle that contains the CDF curve.

Abstract: Several embodiments of systems incorporating memory components are disclosed herein. In one embodiment, a memory system can include a memory component and a processing device configured to access quality metrics corresponding to memory regions of the memory component. In some embodiments, the processing device can compare the quality metrics to one or more memory management thresholds. In some embodiments, when the quality metrics meet and/or exceed a first threshold, a refresh operation can be scheduled and/or performed on a corresponding memory region. In these and other embodiments, when the quality metrics meet and/or exceed a second threshold, the memory region is retired and removed from an active pool of memory regions.