Abstract: A remote plasma generator, coupling microwave frequency energy to a gas and delivering radicals to a downstream process chamber, includes several features which, in conjunction, enable highly efficient radical generation. In the illustrated embodiments, more efficient delivery of oxygen and fluorine radicals translates to more rapid photoresist etch or ash rates. A single-crystal, one-piece sapphire applicator and transport tube minimizes recombination of radicals in route to the process chamber and includes a bend to avoid direct line of sight from the glow discharge to the downstream process chamber. Microwave transparent cooling fluid within a cooling jacket around the applicator enables high power, high temperature plasma production. Additionally, dynamic impedance matching via a sliding short at the terminus of the microwave cavity reduces power loss through reflected energy. At the same time, a low profile microwave trap produces a more dense plasma to increase radical production.

Abstract: A remote plasma generator, coupling microwave frequency energy to a gas and delivering radicals to a downstream process chamber, includes several features which, in conjunction, enable highly efficient radical generation. In the illustrated embodiments, more efficient delivery of oxygen and fluorine radicals translates to more rapid photoresist etch or ash rates. A single-crystal, one-piece sapphire applicator and transport tube minimizes recombination of radicals in route to the process chamber and includes a bend to avoid direct line of sight from the glow discharge to the downstream process chamber. Microwave transparent cooling fluid within a cooling jacket around the applicator enables high power, high temperature plasma production. Additionally, dynamic impedance matching via a sliding short at the terminus of the microwave cavity reduces power loss through reflected energy. At the same time, a low profile microwave trap produces a more dense plasma to increase radical production.

Abstract: The present invention is a novel process for removing photoresist, post-etch polymers, and other assorted residues from semiconductor devices incorporating low-&kgr; dielectric materials. In general the invention comprehends using a substantially oxygen free reducing plasma that is preferably high in hydrogen content, rather than the oxidizing plasma typically used. The invention generally comprises the steps of (a) introducing a semiconductor device including a dielectric material comprising an organic silicon glass into a chamber, (b) introducing effective amounts of a hydrogen containing gas such as ammonia or methane, and (c) decomposing the gases and plasma phase reacting the decomposed gases with the photoresist and or other residues to volatilize the residues. In one preferred embodiment of the method the etchant gasses include ammonia, helium, and a forming gas preferably comprising hydrogen and nitrogen.

Abstract: Workpieces, such as, semiconductor wafers, are continuously manufactured by repetitively alternately switching a common radio frequency power source between a plurality of downstream or in-chamber processing reactors and actively processing one workpiece in a vacuum in an operating one of the processing chambers while simultaneously executing with a robot at atmospheric pressure the overhead tasks relative to next processing another workpiece in the other processing chamber. The active processing of the workpieces in alternate chambers does not overlap, and the robot starts and completes all of its preparatory tasks during the active processing step during the time when a chamber's door is closed thereby providing virtual zero overhead. System architecture allows eliminating all redundant components other than the dual chambers which operate in parallel. For a modest cost increase for the second chamber throughput is trebled and overall costs significantly reduced.

Abstract: A remote plasma generator, coupling microwave frequency energy to a gas and delivering radicals to a downstream process chamber, includes several features which, in conjunction, enable highly efficient radical generation. In the illustrated embodiments, more efficient delivery of oxygen and fluorine radicals translates to more rapid photoresist etch or ash rates. A single-crystal, one-piece sapphire applicator and transport tube minimizes recombination of radicals in route to the process chamber and includes a bend to avoid direct line of sight from the glow discharge to the downstream process chamber. Microwave transparent cooling fluid within a cooling jacket around the applicator enables high power, high temperature plasma production. Additionally, dynamic impedance matching via a sliding short at the terminus of the microwave cavity reduces power loss through reflected energy. At the same time, a low profile microwave trap produces a more dense plasma to increase radical production.

Abstract: Workpieces, such as, semiconductor wafers, are continuously manufactured by repetitively alternately switching a common radio frequency power source between a plurality of downstream or in-chamber processing reactors and actively processing one workpiece in a vacuum in an operating one of the processing chambers while simultaneously executing with a robot at atmospheric pressure the overhead tasks relative to next processing another workpiece in the other processing chamber. The active processing of the workpieces in alternate chambers does not overlap, and the robot starts and completes all of its preparatory tasks during the active processing step during the time when a chamber's door is closed thereby providing virtual zero overhead. System architecture allows eliminating all redundant components other than the dual chambers which operate in parallel. For a modest cost increase for the second chamber throughput is trebled and overall costs significantly reduced.