Patents by Inventor Gerald Neumann

Gerald Neumann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7306960
    Abstract: The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
    Type: Grant
    Filed: December 19, 2005
    Date of Patent: December 11, 2007
    Assignee: Osram GmbH
    Inventors: Georg Bogner, Siegmar Kugler, Ernst Nirschl, Raimund Oberschmid, Karl-Heinz Schlereth, Olaf Schoenfeld, Norbert Stath, Gerald Neumann
  • Publication number: 20060138439
    Abstract: The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
    Type: Application
    Filed: December 19, 2005
    Publication date: June 29, 2006
    Inventors: Georg Bogner, Siegmar Kugler, Ernst Nirschl, Raimund Oberschmid, Karl-Heinz Schlereth, Olaf Schoenfeld, Norbert Stath, Gerald Neumann
  • Patent number: 7026657
    Abstract: The invention concerns a light-emitting diode chip (1) comprising a radiation-emitting active region (32) and a window layer (2). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region (32) is smaller than the cross-sectional area of the window layer (2) available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
    Type: Grant
    Filed: April 19, 2001
    Date of Patent: April 11, 2006
    Assignee: Osram GmbH
    Inventors: Georg Bogner, Siegmar Kugler, Ernst Nirschl, Raimund Oberschmid, Karl-Heinz Schlereth, Olaf Schoenfeld, Norbert Stath, Gerald Neumann
  • Publication number: 20040036080
    Abstract: The invention concerns a light-emitting diode chip (1) comprising a radiation-emitting active region (32) and a window layer (2). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region (32) is smaller than the cross-sectional area of the window layer (2) available for the decoupling of light.
    Type: Application
    Filed: August 11, 2003
    Publication date: February 26, 2004
    Inventors: Georg Bogner, Siegmar Kugler, Ernst Nirschl, Raimund Oberschmid, Karl-Heinz Schlereth, Olaf Schoenfeld, Norbert Stath, Gerald Neumann
  • Publication number: 20010010375
    Abstract: A semiconductor configuration has a substrate made of GaP and an epitaxial layer on the substrate. The expitaxial layer has an n-doped partial layer and a p-doped partial layer. A pn junction is formed at the boundary between the two partial layers. The epitaxial layer contains an impurity which is an element from the 3rd main group and/or from the 5th main group which is not identical to N. The impurity is present at a maximum concentration in the GaP epitaxial layer of between 1017 and 1018 cm−3.
    Type: Application
    Filed: December 4, 2000
    Publication date: August 2, 2001
    Inventors: Gerald Neumann, Gunther Gronninger, Peter Heidborn, Gerald Schemmel
  • Patent number: 5614736
    Abstract: A light emitting diode includes a doped semiconductor substrate wafer with a layer sequence suitable for light emission in the green spectral range epitaxially applied thereon. A zinc-doped contact is applied to the p-conductive side of the wafer for efficient generation of pure green light emissions. An electrically conductive layer is provided between the zinc-doped contact and the p-conductive wafer side to suppress diffusion of oxygen into the p-conductive wafer side during diode manufacture.
    Type: Grant
    Filed: September 25, 1995
    Date of Patent: March 25, 1997
    Assignee: Siemens Aktiengesellschaft
    Inventors: Gerald Neumann, Ernst Nirschl, Werner Spaeth