Abstract: A simulation device for the screw joint simulation of a nutrunner includes a test connecting element rigidly connected to a brake unit. The nutrunner can be coupled to the test connecting element and activated to exert a torque that rotates the test connecting element about an axis of rotation. Activation of the brake unit brakes the test connecting element. A torque transducer includes a rotational angle transducer for measuring a rotational angle by which the test connecting element rotates about the rotation axis. The simulation device includes a zero mark, and the brake unit can be adjusted to a zero angle with respect to the zero mark.

Abstract: A simulation device for the screw joint simulation of a nutrunner includes a test connecting element rigidly connected to a brake unit. The nutrunner can be coupled to the test connecting element and activated to exert a torque that rotates the test connecting element about an axis of rotation. Activation of the brake unit brakes the test connecting element. A torque transducer includes a rotational angle transducer for measuring a rotational angle by which the test connecting element rotates about the rotation axis. The simulation device includes a zero mark, and the brake unit can be adjusted to a zero angle with respect to the zero mark.

Abstract: A simulation device for the screw joint simulation of a nutrunner includes a test connecting element rigidly connected to a brake unit. The nutrunner can be coupled to the test connecting element and activated to exert a torque that rotates the test connecting element about an axis of rotation. Activation of the brake unit brakes the test connecting element. A torque transducer includes a rotational angle transducer for measuring a rotational angle by which the test connecting element rotates about the rotation axis. The simulation device includes a zero mark, and the brake unit can be adjusted to a zero angle with respect to the zero mark.

Abstract: The invention relates to a screw load testing device that includes a housing configured to support a screw and a mating element that is formed as a threaded nut and is positioned to interact with a threaded portion of the screw. The screw load testing device housing includes a measuring device for detecting an axial force acting on the screw and/or for detecting a torque acting on the screw. A first housing member is configured to interact at least indirectly with a portion that is in monolithic connection to the screw. A second housing member is configured to interact with the threaded nut, and the two housing members are arranged movably relative to each other at least in the direction of a longitudinal axis.

Abstract: The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.

Abstract: The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.

Abstract: The invention concerns a light-emitting diode chip (1) comprising a radiation-emitting active region (32) and a window layer (2). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region (32) is smaller than the cross-sectional area of the window layer (2) available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.

Abstract: The invention concerns a light-emitting diode chip (1) comprising a radiation-emitting active region (32) and a window layer (2). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region (32) is smaller than the cross-sectional area of the window layer (2) available for the decoupling of light.

Abstract: A semiconductor configuration has a substrate made of GaP and an epitaxial layer on the substrate. The expitaxial layer has an n-doped partial layer and a p-doped partial layer. A pn junction is formed at the boundary between the two partial layers. The epitaxial layer contains an impurity which is an element from the 3rd main group and/or from the 5th main group which is not identical to N. The impurity is present at a maximum concentration in the GaP epitaxial layer of between 1017 and 1018 cm−3.

Abstract: A light emitting diode includes a doped semiconductor substrate wafer with a layer sequence suitable for light emission in the green spectral range epitaxially applied thereon. A zinc-doped contact is applied to the p-conductive side of the wafer for efficient generation of pure green light emissions. An electrically conductive layer is provided between the zinc-doped contact and the p-conductive wafer side to suppress diffusion of oxygen into the p-conductive wafer side during diode manufacture.