Abstract: The application relates to a semiconductor power device including a semiconductor body in which a transistor device is formed, the transistor device having a gate region and a channel region laterally aside the gate region, the gate region including a gate electrode for controlling a channel formation in the channel region, and a gate dielectric laterally between the channel region and the gate electrode. The gate electrode includes a gate electrode bulk region and a gate electrode layer laterally between the gate dielectric and the gate electrode bulk region. The gate electrode layer is made of a doped metallically conductive material.

Abstract: The application relates to a semiconductor power device including a semiconductor body in which a transistor device is formed, the transistor device having a gate region and a channel region laterally aside the gate region, the gate region including a gate electrode for controlling a channel formation in the channel region, and a gate dielectric laterally between the channel region and the gate electrode. The gate electrode includes a gate electrode bulk region and a gate electrode layer laterally between the gate dielectric and the gate electrode bulk region. The gate electrode layer is made of a doped metallically conductive material.