Abstract: A method of manufacturing a semiconductor device is proposed. The method includes forming doped regions in a SiC semiconductor body at a first surface of the SiC semiconductor body. The method further includes forming an ohmic contact to at least part of the doped regions on the first surface of the SiC semiconductor body. Thereafter a gate dielectric is formed on the SiC semiconductor body.

Abstract: Herein, a method of forming a semiconductor device may comprise forming a semiconductor substrate comprising silicon carbide at a surface thereof, cleaning a surface area of the semiconductor substrate by removing oxide species, carbon clusters, or other contaminants, and forming a dielectric layer above the cleaned surface of the semiconductor substrate. The method further provides a surface passivation at the interface of the cleaned surface of the semiconductor substrate and the dielectric layer.

Abstract: A method for forming a wide band gap semiconductor device is provided. The method includes forming a gate insulation layer on a wide band gap semiconductor substrate and annealing the gate insulation layer using at least a first reactive gas species and a second reactive gas species, wherein the first reactive gas species differs from the second reactive gas species. The method can include forming a gate electrode on the gate insulation layer after annealing the gate insulation layer.

Abstract: A method for forming a wide band gap semiconductor device is provided. The method includes forming a gate insulation layer on a wide band gap semiconductor substrate and annealing the gate insulation layer using at least a first reactive gas species and a second reactive gas species, wherein the first reactive gas species differs from the second reactive gas species. The method can include forming a gate electrode on the gate insulation layer after annealing the gate insulation layer.

Abstract: A transistor device is disclosed. The transistor device includes a semiconductor body and plurality of transistor cells. Each transistor cell includes: a drift region and a source region of a first doping type; a body region of a second doping type complementary to the first doping type; a field shaping region of the second doping type connected to a source node; and a gate electrode connected to a gate node. The gate electrode is arranged in a trench extending from a first surface into the semiconductor body. The gate electrode is dielectrically insulated from the body region by a gate dielectric. At least portions of the gate electrode are dielectrically insulated from the drift region by a field dielectric. The field shaping region adjoins the trench. The field dielectric comprises a high-k dielectric.

Abstract: A method for forming an interface layer on a silicon carbide body comprises removing an oxide layer from a surface of a silicon carbide body to obtain a silicon carbide surface. The silicon carbide body comprises a source region of a first conductivity type and a body region of a second conductivity type. The method further comprises after removing the oxide layer, depositing an interface layer directly on the silicon carbide surface. The interface layer has a thickness of less or equal to 15 nm. The method further comprises forming an electrical insulator over the interface layer, and forming a gate electrode over the electrical insulator.

Abstract: A method for forming a wide band gap semiconductor device is provided. The method includes forming a gate insulation layer on a wide band gap semiconductor substrate and annealing the gate insulation layer using at least a first reactive gas species and a second reactive gas species, wherein the first reactive gas species differs from the second reactive gas species. The method can include forming a gate electrode on the gate insulation layer after annealing the gate insulation layer.

Abstract: A method for forming a wide band gap semiconductor device is provided. The method includes forming a gate insulation layer on a wide band gap semiconductor substrate and annealing the gate insulation layer using at least a first reactive gas species and a second reactive gas species, wherein the first reactive gas species differs from the second reactive gas species. The method can include forming a gate electrode on the gate insulation layer after annealing the gate insulation layer.

Abstract: A method for forming a wide band gap semiconductor device is provided. The method includes forming a gate insulation layer on a wide band gap semiconductor substrate and annealing the gate insulation layer using at least a first reactive gas species and a second reactive gas species, wherein the first reactive gas species differs from the second reactive gas species. The method can include forming a gate electrode on the gate insulation layer after annealing the gate insulation layer.