Patents by Inventor Gerald Rescher

Gerald Rescher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for Annealing a Gate Insulation Layer on a Wide Band Gap Semiconductor Substrate
    Publication number: 20220157607
    Abstract: A method for forming a wide band gap semiconductor device is provided. The method includes forming a gate insulation layer on a wide band gap semiconductor substrate and annealing the gate insulation layer using at least a first reactive gas species and a second reactive gas species, wherein the first reactive gas species differs from the second reactive gas species. The method can include forming a gate electrode on the gate insulation layer after annealing the gate insulation layer.
    Type: Application
    Filed: February 8, 2022
    Publication date: May 19, 2022
    Inventors: Thomas Aichinger, Gerald Rescher, Michael Stadtmueller
  • Wide band gap semiconductor device and method for forming a wide band gap semiconductor device
    Patent number: 11295951
    Abstract: A method for forming a wide band gap semiconductor device is provided. The method includes forming a gate insulation layer on a wide band gap semiconductor substrate and annealing the gate insulation layer using at least a first reactive gas species and a second reactive gas species, wherein the first reactive gas species differs from the second reactive gas species. The method can include forming a gate electrode on the gate insulation layer after annealing the gate insulation layer.
    Type: Grant
    Filed: April 3, 2019
    Date of Patent: April 5, 2022
    Assignee: Infineon Technologies AG
    Inventors: Thomas Aichinger, Gerald Rescher, Michael Stadtmueller
  • Wide Band Gap Semiconductor Device and Method for Forming a Wide Band Gap Semiconductor Device
    Publication number: 20190311903
    Abstract: A method for forming a wide band gap semiconductor device is provided. The method includes forming a gate insulation layer on a wide band gap semiconductor substrate and annealing the gate insulation layer using at least a first reactive gas species and a second reactive gas species, wherein the first reactive gas species differs from the second reactive gas species. The method can include forming a gate electrode on the gate insulation layer after annealing the gate insulation layer.
    Type: Application
    Filed: April 3, 2019
    Publication date: October 10, 2019
    Inventors: Thomas Aichinger, Gerald Rescher, Michael Stadtmueller