Patents by Inventor Gerald Richardson

Gerald Richardson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integration of non-noble DRAM electrode
    Patent number: 8652927
    Abstract: A method for forming a capacitor stack is described. In some embodiments of the present invention, a first electrode structure is comprised of multiple materials. A first material is formed above the substrate. A portion of the first material is etched. A second material is formed above the first material. A portion of the second material is etched. Optionally, the first electrode structure receives an anneal treatment. A dielectric material is formed above the first electrode structure. Optionally, the dielectric material receives an anneal treatment. A second electrode material is formed above the dielectric material. Typically, the capacitor stack receives an anneal treatment.
    Type: Grant
    Filed: January 10, 2013
    Date of Patent: February 18, 2014
    Assignee: Intermolecular, Inc.
    Inventors: Sandra Malhotra, Hanhong Chen, Wim Y. Deweerd, Edward L. Haywood, Hiroyuki Ode, Gerald Richardson
  • Integration of Non-Noble DRAM Electrode
    Publication number: 20130320495
    Abstract: A method for forming a capacitor stack is described. In some embodiments of the present invention, a first electrode structure is comprised of multiple materials. A first material is formed above the substrate. A portion of the first material is etched. A second material is formed above the first material. A portion of the second material is etched. Optionally, the first electrode structure receives an anneal treatment. A dielectric material is formed above the first electrode structure. Optionally, the dielectric material receives an anneal treatment. A second electrode material is formed above the dielectric material. Typically, the capacitor stack receives an anneal treatment.
    Type: Application
    Filed: January 10, 2013
    Publication date: December 5, 2013
    Applicant: INTERMOLECULAR, INC.
    Inventors: Sandra G. Malhotra, Hanhong Chen, Wim Y. Deweerd, Edward L. Haywood, Hiroyuki Ode, Gerald Richardson
  • Integration of non-noble DRAM electrode
    Patent number: 8530348
    Abstract: A method for forming a capacitor stack is described. In some embodiments of the present invention, a first electrode structure is comprised of multiple materials. A first material is formed above the substrate. A portion of the first material is etched. A second material is formed above the first material. A portion of the second material is etched. Optionally, the first electrode structure receives an anneal treatment. A dielectric material is formed above the first electrode structure. Optionally, the dielectric material receives an anneal treatment. A second electrode material is formed above the dielectric material. Typically, the capacitor stack receives an anneal treatment.
    Type: Grant
    Filed: May 29, 2012
    Date of Patent: September 10, 2013
    Assignees: Intermolecular, Inc., Elpida Memory, Inc.
    Inventors: Sandra G. Malhotra, Hanhong Chen, Wim Y. Deweerd, Edward L. Haywood, Hiroyuki Ode, Gerald Richardson