Abstract: According to an embodiment, a method of forming a power semiconductor device is provided. The method includes providing a semiconductor substrate and forming an epitaxial layer on the semiconductor substrate. The epitaxial layer includes a body region, a source region, and a drift region. The method further includes forming a dielectric layer on the epitaxial layer. The dielectric layer is formed thicker above a drift region of the epitaxial layer than above at least part of the body region and the dielectric layer is formed at a temperature less than 950° C.

Abstract: According to an embodiment, a method of forming a power semiconductor device is provided. The method includes providing a semiconductor substrate and forming an epitaxial layer on the semiconductor substrate. The epitaxial layer includes a body region, a source region, and a drift region. The method further includes forming a dielectric layer on the epitaxial layer. The dielectric layer is formed thicker above a drift region of the epitaxial layer than above at least part of the body region and the dielectric layer is formed at a temperature less than 950° C.

Abstract: A semiconductor component has a first and a second contact-making region, and a semiconductor volume arranged between the first and the second contact-making region. Within the semiconductor volume, it is possible to generate a current flow that runs from the first contact-making region to the second contact-making region, or vice versa. The semiconductor volume and/or the contact-making regions are configured in such a way that the local flow cross-section of a locally elevated current flow, which is caused by current splitting, is enlarged at least in partial regions of the semiconductor volume.

Abstract: A semiconductor component has a first and a second contact-making region, and a semiconductor volume arranged between the first and the second contact-making region. Within the semiconductor volume, it is possible to generate a current flow that runs from the first contact-making region to the second contact-making region, or vice versa. The semiconductor volume and/or the contact-making regions are configured in such a way that the local flow cross-section of a locally elevated current flow, which is caused by current splitting, is enlarged at least in partial regions of the semiconductor volume.

Abstract: The optical absorption edge of a semiconductor is shifted toward lower photon energies in an electrical field. The method of the invention utilizes this electro-absorptive effect in order to measure electrical signals of microelectronics in an optical way. A plate-shaped member arranged immediately above the component and scanned by a laser beam serves as a measuring sensor. This plate-shaped member is composed of a carrier crystal which is transparent for the radiation employed, of a conductive layer which is likewise transparent, and of a semiconductor which is dielectrically mirrored at the specimen side, the absorption behavior thereof being influenced by the electrical stray fields emanating from the interconnects. The measured quantity is the intensity of the laser radiation reflected at the dielectric mirror and deflected in the direction of a photodiode.

Abstract: Heretofore, models for calculating the wave propagation in SAW components did not consider all physical effects, deviations between realized and desired component behavior therefore frequently occur. In order to improve such models, the wave field in the component is imaged in a phase-accurate manner or to measure the parameters that characterize the elastic wave in a topically-resolved manner. Herein, the deflection of the component surface produced by the elastic wave is quantatively acquired by measuring the deflection of a pulsed laser beam. A mode-coupled Nd:YAG laser with a subsequent pulse compressor is used as the radiation source.

Abstract: A mechanical probe for optical measurement of electrical signals. The probe for optical measurement of electrical signals with high chronological resolution is composed of a cuboid electro-optical crystal, of a co-planar waveguide structure located on a lateral face of the crystal and of a metallic tip applied to the end face of the crystal adjacent a measuring location. The signal at the measuring location, for example at an interconnect of an integrated circuit is taken with the metallic tip and is fed into the co-planar waveguide structure composed of two strip-shaped metallizations. Probe holders or electrostrictive manipulators known in the art of electrical metrology (probe measuring location) can be used for exact positioning of the probe onto the measuring location.