Abstract: A semiconductor configuration has a substrate made of GaP and an epitaxial layer on the substrate. The expitaxial layer has an n-doped partial layer and a p-doped partial layer. A pn junction is formed at the boundary between the two partial layers. The epitaxial layer contains an impurity which is an element from the 3rd main group and/or from the 5th main group which is not identical to N. The impurity is present at a maximum concentration in the GaP epitaxial layer of between 1017 and 1018 cm−3.

Abstract: A method for making the light-sensitive layer of a GaInAsP photodetector for the wavelength range from about 1350 nm to 1400 nm by liquid-phase epitaxy. A melt is saturated with phosphorus by introducing a first InP substrate into a ternary solution of GaAs and InAs in indium and maintaining the temperature constant at about 690.degree. C. for a few hours. After removal of the first substrate, the temperature is lowered by about 5.degree. C., and a second InP substrate, on which the desired layer is grown, is introduced into the melt. The cooling rate is approximately 1.degree. C./hr.