Abstract: A method of switching on a voltage supply of a voltage domain of a semiconductor circuit includes switching, initially, a first switchable element, via which elements of the voltage domain are connected to a supply voltage of the semiconductor circuit, to a conductive state. The method includes switching, after a predetermined period of time, a second switchable element, via which elements of the voltage domain are connected to the supply voltage of the semiconductor circuit, to a conductive state. The driving capacity of the first switchable element is less than the driving capacity of the second switchable element.

Abstract: A method of switching on a voltage supply of a voltage domain of a semiconductor circuit includes switching, initially, a first switchable element, via which elements of the voltage domain are connected to a supply voltage of the semiconductor circuit, to a conductive state. The method includes switching, after a predetermined period of time, a second switchable element, via which elements of the voltage domain are connected to the supply voltage of the semiconductor circuit, to a conductive state. The driving capacity of the first switchable element is less than the driving capacity of the second switchable element.

Abstract: On embodiment of the invention provides a semiconductor component with at least one thin oxide transistor, the gate of which is directly connected to a first electrical potential by means of a connecting element. The connecting element contains a thermal desired breaking point. In order to realize an integrated backup capacitance, at least one of the further terminals of the thin oxide transistor (source or drain) is directly connected to a second potential, that is different from the first potential.

Abstract: The memory device contains comparison units with which it is possible to check whether an address applied to the memory device is associated with a memory cell which cannot be properly written to or read out or is located in a memory cell area containing memory cells which cannot be properly written to or read out. During the testing of the memory device, the comparison units can be placed into a state which differs from the state of the comparison units during the normal operation of the memory device.

Abstract: The memory device has a selection device which, when required, ensures that backup memory cells or backup memory cell areas are used instead of memory cells or memory cell areas which cannot be written to or read from properly. Information about the location of the memory cells which are possibly not to be used is actually supplied to the selection device at an instant at which it is not yet definite whether memory cells need to be replaced.