Abstract: Smoothing irregularities in a surface is accomplished by a wet-etchback technique. In this technique, a polysilicate composition is formed on a nonplanar substrate such as the surface of an integrated-circuit wafer. The polysilicate is etched away and the etching is continued into the underlying surface. As a result, a substantial smoothing of the surface is obtained.

Abstract: The TVS method is a voltammetric method for detecting mobile ionic impurities in the dielectric layer of a MOS capacitor structure. Disclosed here is a method of semiconductor device fabrication involving a modified TVS method in which the voltage is changed in discrete steps rather than varied continuously, and charge, rather than induced current, is measured. The modified TVS method can be faster than conventional TVS, and calibration is unnecessary.

Abstract: Disclosed is a method of semiconductor device fabrication involving the detection of water in a dielectric layer that is part of the body of such device. At relatively high values of a voltage applied across the dielectric layer, water that is present in the dielectric decomposes and releases protons. Varying the applied voltage gives rise to a displacement current. The released protons contribute an ionic component to the displacement current. The ionic component is detected.

Abstract: A sol-gel process is utilized for producing silicon oxide glasses useful in the manufacture of devices such as semiconductor devices. These glasses are easily deposited by techniques such as spinning. Not only is the glass easily applied, but also has advantageous electrical, etching, and mechanical properties. Thus, these glasses are useful in applications such as passivating layers for integrated circuit devices and as intermediary layers in trilevel lithography for the production of such devices.

Abstract: Conformal layers of a silicon oxide, such as silicon dioxide, are deposited at temperatures below 600 degrees C. through the decomposition of compounds such as diacetoxyditertiarybutoxysilane. The required temperatures do not significantly affect temperature-sensitive structures. Therefore, it is possible to form silicon oxide regions in the processing of devices having these structures. More generally, lowered-temperature processing can be applied to the deposition of other materials which include silicon oxide. For example, borophosphosilicate glasses can be deposited by chemical vapor deposition processing involving flash-evaporation of a mixture of liquid precursor reagents.

Abstract: Conformal layers of a silicon oxide, such as silicon dioxide, are deposited at temperatures below 600 degrees C. through the decomposition of compounds such as diacetoxyditertiarybutoxysilane. The required temperatures do not significantly affect temperature-sensitive structures. Therefore, it is possible to form silicon oxide regions in the processing of devices having these structures.

Abstract: Excellent resolution in the lithographic fabrication of electronic devices is achieved with a specific bilevel resist. This bilevel resist includes an underlying layer formed with a conventional material such as a novolac resin baked at 200.degree. C. for 30 minutes and an overlying layer including a silicon containing material such as a silicon derivative of poly(methyl methacrylate). This bilevel resist has the attributes of a trilevel resist and requires significantly less processing.