Abstract: The invention provides for growing semiconductor and other crystals by loading a vessel in its lower portion with a seed crystal, loading a charge thereon in the vessel, heating the charge to a molten state and electromagnetically stirring the melt using magnetic and electric fields to obtain a more uniform composition of melt and slowly reducing the temperature of the melt over the crystal to grow a more uniform crystal from such stirred melt.

Abstract: The invention provides for growing semiconductor and other crystals by loading a vessel in its lower portion with a seed crystal, loading a charge thereon in the vessel, heating the charge to a molten state and electromagnetically stirring the melt using magnetic and electric fields to obtain a more uniform composition of melt and slowly reducing the temperature of the melt over the crystal to grow a more uniform crystal from such stirred melt.

Abstract: Method and apparatus are provided for forming metal nitrides (MN) wherein M is contacted with iodine vapor or hydrogen iodide (HI) vapor to form metal iodide (MI) and contacting MI with ammonia to form the MN in a process of reduced or no toxicity. MN is then deposited on a substrate, on one or more seeds or it can self nucleate on the walls of a growth chamber, to form high purity metal nitride material. The inventive MN material finds use in semiconductor materials and in making nitride electronic devices as well as other uses.

Abstract: An instrument for forming nanometric features on surfaces of materials having a motor driven support for moving a workpiece on an X-Y-Z axis, a scribing tool of nanometric proportion engagable with the workpiece and a laser system for sensing movement. The tool is mounted on piezoelectric actuating means and the entire system is under the control of a programmed computer processing unit.

Abstract: A wafer cutting device has a plurality of individually highly tensioned diamond impregnated wires that are mounted in a translatable head. Each wire has a tension monitor connected thereto for the purpose of insuring uniform tension and also alerting to breakage. Further, a differential DC voltage is applied to the wires and the crystal with the assistance of electrolytes to improve the removal of material for minimizing damage to the surfaces. The crystal is mounted on a two dimensional stage. During normal cutting the crystal is moved vertically into the cutting wire. The vertical cutting rate is adjusted due to the configuration of the crystal. At the end of cutting, the crystal is moved laterally so as to place a notch in the wafers for the purpose of removing the wafer in a clean break.

Abstract: An instrument for forming nanometric features on surfaces of materials having a motor driven support for moving a workpiece on an X-Y-Z axis, a scribing tool of nanometric proportion engagable with the workpiece and a laser system for sensing movement. The tool is mounted on piezoelectric actuating means and the entire system is under the control of a programmed computer processing unit.

Abstract: A telescoping low vibration pulling mechanism for use in Czochralski crystal growth apparatus, comprising a broached bushing which defines an internal circumference of teeth therein, which teeth cooperate with complimentary teeth defined on the circumference of a splined shaft. The bushing is coupled to a motor drive via a hollow tube and the splined shaft, couplable to a seed shaft and an elevation assembly, telescopes through said bushing within said hollow tube.